Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    "DARLINGTON TRANSISTOR" PANASONIC Search Results

    "DARLINGTON TRANSISTOR" PANASONIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    "DARLINGTON TRANSISTOR" PANASONIC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD1198

    Abstract: 2SD1198A
    Text: Transistor 2SD1198, 2SD1198A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification • Features ■ Absolute Maximum Ratings Parameter 2SD1198 base voltage 2SD1198A Collector to 2SD1198 emitter voltage 2SD1198A * Ratings Unit


    Original     		PDF 2SD1198, 2SD1198A 2SD1198 2SD1198 2SD1198A

    2SD1198

    Abstract: 2SD1198A
    Text: Transistor 2SD1198, 2SD1198A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification • Features ■ Absolute Maximum Ratings Parameter 2SD1198 base voltage 2SD1198A Collector to 2SD1198 emitter voltage 2SD1198A * Ratings VEBO


    Original     		PDF 2SD1198, 2SD1198A 2SD1198 2SD1198 2SD1198A

    2SD1478

    Abstract: 2SD1478A
    Text: Transistor 2SD1478, 2SD1478A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 Symbol Collector to 2SD1478 base voltage 2SD1478A Collector to 2SD1478 Ratings 30 VCBO


    Original     		PDF 2SD1478, 2SD1478A 2SD1478 2SD1478 2SD1478A

    2SD1205

    Abstract: 2SD1205A
    Text: Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 2.5±0.1 6.9±0.1 Parameter 1.0 0.45±0.05 2SD1205 base voltage 2SD1205A Collector to 2SD1205 emitter voltage 2SD1205A Ratings VEBO Peak collector current


    Original     		PDF 2SD1205, 2SD1205A 2SD1205 2SD1205 2SD1205A

    2SD2220

    Abstract: No abstract text available
    Text: Power Transistors 2SD2220 Silicon NPN triple diffusion planar type Darlington For low-frequency amplification Unit: mm ● ● Suitable for the driver circuit of a motor, a printer hammer and like that, since this transistor is designed for the high forward


    Original     		PDF 2SD2220 2SD2220

    2SD1478

    Abstract: 2SD1478A
    Text: Transistor 2SD1478, 2SD1478A Silicon NPN epitaxial planer type darlington Unit: mm 0.40+0.10 ñ0.05 For low-frequency amplification 0.16+0.10 -0.06 Parameter 2SD1478 base voltage 2SD1478A Collector to 2SD1478 Ratings 30 VCBO Emitter to base voltage VEBO Peak collector current


    Original     		PDF 2SD1478, 2SD1478A 2SD1478 2SD1478 2SD1478A

    2SD2258

    Abstract: No abstract text available
    Text: Transistor 2SD2258 Silicon NPN epitaxial planar type Unit: mm For low-frequency output amplification 6.9±0.1 4.0 2.5±0.1 0.8 • Features (0.5) (1.0) (0.2) 4.5±0.1 0.7 0.65 max. 14.5±0.5 (1.0) • Darlington connection • High forward current transfer ratio hFE


    Original     		PDF 2SD2258 2SD2258

    2SD2416

    Abstract: No abstract text available
    Text: Transistor 2SD2416 Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit: mm ● 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● High foward current transfer ratio hFE. 60V zener diode built in between collector and base.


    Original     		PDF 2SD2416 2SD2416

    2SD2598

    Abstract: No abstract text available
    Text: Transistor 2SD2598 Silicon NPN epitaxial planer type darlington Unit: mm 1.05 2.5±0.1 ±0.05 4.0 0.8 • Absolute Maximum Ratings * Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO


    Original     		PDF 2SD2598 45nductor 2SD2598

    2SD2067

    Abstract: No abstract text available
    Text: Transistor 2SD2067 Tentative Silicon NPN epitaxial planer type Unit: mm 6.9±0.1 4.0 0.7 2.5±0.1 (0.8) (0.5) (1.0) (0.2) 4.5±0.1 For low-frequency output amplification (1.0) 0.65 max. ● ● ● ● ● Darlington connection. High foward current transfer ratio hFE.


    Original     		PDF 2SD2067 2SD2067

    2SD1511

    Abstract: No abstract text available
    Text: Transistor 2SD1511 Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency output amplification 4.5±0.1 ● • * 1.5±0.1 Parameter Symbol Ratings Unit VCBO 100 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Peak collector current


    Original     		PDF 2SD1511 2SD1511

    2SD2067

    Abstract: No abstract text available
    Text: Transistor 2SD2067 Tentative Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.7 4.0 (1.45) 0.8 • Features ● ● 14.5±0.5 +0.1 0.45–0.05 2.5±0.5 1 2.5±0.5 2 3 2.5±0.1 ● Darlington connection. High foward current transfer ratio hFE.


    Original     		PDF 2SD2067 2SD2067

    darlington pair transistor

    Abstract: 6LF6 common collector amplifier circuit designing micro-x mhz ghz microwave GRM188R71E473K Amplifier SOT-89 c4 0603CS-33NX_LU SKY65014 sky65015-70lf transistor Common Base configuration
    Text: APPLICATION NOTE Gain Block Bias Networks Introduction Skyworks gain block amplifiers are InGaP/GaAs HBT integrated circuits. They use a Darlington-pair transistor configuration with bias and feedback resistors properly selected to determine the gain, input and output impedances and bias parameters. A schematic representation of the amplifier is shown in Figure 1.


    Original     		PDF

    2SD1205

    Abstract: 2SD1205A
    Text: Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 6.9±0.1 1.5 1.0 4.5±0.1 7 0. R 0.85 4.1±0.2 ● 2.4±0.2 2.0±0.2 3.5±0.1 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE


    Original     		PDF 2SD1205, 2SD1205A 2SD1205 2SD1205 2SD1205A

    DN8650

    Abstract: darlington buffer array Seven Transistor Array PNP DN-86
    Text: Panasonic Others DN8650 7-circuit Darlington Driver Array • Overview The DN8650, which is an NPN Darlington type buffer with PNP transistor for input, is a 7-circuit non-inverting type driver array. ■ Features • • • • • 7-circuit buffer Low output breakdown voltage : V ce sus = 35V (min)


    OCR Scan     		PDF DN8650 DN8650, 500mA 16-pin DIP016-P-0300D) 350mA bT32fiS2 DN8650 darlington buffer array Seven Transistor Array PNP DN-86

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Others DN8650 7-circuit Darlington Driver Array • Overview The DN8650, which is an NPN Darlington type buffer with PNP transistor for input, is a 7-circuit non-inverting type driver array. ■ Features • 7-circuit buffer • • • • Low output breakdown voltage : V ce sus = 3 5 V (min)


    OCR Scan     		PDF DN8650 DN8650, 16-pin

    PU4420

    Abstract: PU3120 PU3220 PU4120 PU4220 PU4520 JU254
    Text: Power Transistor Arrays PU3220, PU4220, PU4520 Silicon NPN Epitaxial Planar Darlington Type PU3220, PU4220, PU4520 Package Dimensions PU3220 Unit:mm 4.2max. 20.5max. Power Amplifier, Switching Complementary Pair with PU3120, PU4120, PU4420 •Features -0:5 + 0.15


    OCR Scan     		PDF PU3220, PU4220, PU4520 PU3120, PU4120, PU4420 PU3220: PU4420 PU3120 PU3220 PU4120 PU4220 PU4520 JU254

    DARLINGTON TRANSISTOR ARRAYS 2A

    Abstract: PU3119 transistor C1505 i32652 PU3219 PU4119 PU4219 PU4419 PU4519 darlington pair transistor 1A
    Text: PU3219, PU4219, PU4519 Power Transistor Arrays PU3219, PU4219, PU4519 Silicon NPN Epitaxial Planar Darlington Type Package Dimensions PU3219 Power Amplifier, Switching Complementary Pair with PU3119, PU4119, PU4419 • Features • • • • • anlflifflVllf


    OCR Scan     		PDF PU3219, PU4219, PU4519 PU3119, PU4119, PU4419 PU3219: DARLINGTON TRANSISTOR ARRAYS 2A PU3119 transistor C1505 i32652 PU3219 PU4119 PU4219 PU4419 PU4519 darlington pair transistor 1A

    VOLTAGE-50

    Abstract: No abstract text available
    Text: Panasonic Transistor 2SD2598 Unit: mm Silicon NPN epitaxial planer type darlington For low -frequency am plification • ïin a Features • Forward current transfer ratio hpe is designed high, which is ap­ propriate to the driver circuit of motors and printer hammer: hFE


    OCR Scan     		PDF 2SD2598 VOLTAGE-50

    PU3119

    Abstract: DARLINGTON TRANSISTOR ARRAYS 2A PU3219 PU4119 PU4219 PU4419 PU4519
    Text: Power Transistor Arrays PU3219, PU4219, PU4519 PU3219, PU4219, PU4519 • Package Dimensions Silicon NPN Epitaxial Planar Darlington Type PU3219 Unit: mm Power Amplifier, Switching Complementary Pair with PU3119, PU4119, PU4419 ■Features ^fl-0.5 + 0.15 -i-*-1.0±0.25


    OCR Scan     		PDF PU3219, PU4219, PU4519 PU3119, PU4119, PU4419 PU3219: PU3119 DARLINGTON TRANSISTOR ARRAYS 2A PU3219 PU4119 PU4219 PU4419 PU4519

    DARLINGTON TRANSISTOR ARRAYS 2A

    Abstract: PU4422 PU3122 PU4122
    Text: Power Transistor Arrays PU3122, PU4122, PU4422 PU3122, PU4122, PU4422 Package Dimensions PU3122 Silicon NPN Triple-Diffused Planar Darlington Type Power Amplifier, Switching • Features • • • • • • • Built-in 30V Zener diode b etw een C and B


    OCR Scan     		PDF PU3122, PU4122, PU4422 200mJ PU3122: PU4122: DARLINGTON TRANSISTOR ARRAYS 2A PU4422 PU3122 PU4122

    PU4424

    Abstract: PU4124 PU3124
    Text: Power Transistor Arrays PU3124, PU4124, PU 4424 PU3124, PU41.24, PU4424 Package Dimensions P U 3124 Unit! mm 4.2max. 20.5max. Silicon NPN Triple-Diffused Planar Darlington Type Power Amplifier, Switching 0.8 ±0.25 4 ^0.5 + 0 .15 1.0±0.25 2.54 + 0.2 I 0 .5 + 0 .1 5


    OCR Scan     		PDF PU3124, PU4124, PU4424 PU3124: PU4124: -12mA PU4424 PU4124 PU3124

    Untitled

    Abstract: No abstract text available
    Text: Pow er Transistor A rrays PU 3220, PU 4220, PU 4520 PU3220, PU4220, PU4520 Package Dim ensions U nit'.m m j P U 3220 Silicon NPN Epitaxial Planar Darlington Type 4.2max. 20 .5ma x. Pow er Am plifier, Switching C om plem entary Pair with P U 3 1 2 0 , P U 4 1 2 0 , P U 4 42 0


    OCR Scan     		PDF PU3220, PU4220, PU4520 25JJI D017034 /PU4220 IPU4520

    PU4120

    Abstract: PU3120 PU3220 PU4220 PU4420 PU4520
    Text: Power Transistor Arrays PU3120, PU4120, PU4420 PU3120, PU4120, PU4420 Silicon NPN Triple-Diffused Planar Darlington Type i Package D im ensions Power A m plifier, Switching C om plem entary Pair with PU3220, PU4220, PU4520 • Features PU 3 1 2 0 • H igh D C c u r r e n t g ain I i f e


    OCR Scan     		PDF PU3120, PU4120, PU4420 PU3220, PU4220, PU4520 PU3120: PU4120 PU3120 PU3220 PU4220 PU4420 PU4520