diode sy 171 10
Abstract: diode sy 170/10
Text: Philips Semiconductors Product specification Rectifier diodes ultrafast BYV40 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency dual rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop,
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BYV40
OT223
BYV40-
OT223.
diode sy 171 10
diode sy 170/10
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k446
Abstract: BUK446-1000B
Text: N AMER P H IL IP S /D IS C R E T E b'ìE D • bbS3131 DD3DSÛS rnm ps semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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0D305Ã
K446-1000B
OT186
BUK446-1000B
k446
BUK446-1000B
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diode sy 171 10
Abstract: diode sy 171 "DIODE" SY 171 1 g diode ITT 172
Text: - TC74LVX14F/FN/FS HEX SCHMITT INVERTER T he T C 74L V X 14 is a h ig h speed CMOS H E X SCH M ITT IN V ER T E R fab ricated w ith silicon gate C2MOS technology. D esigned for use in 3.3 V olt system s, i t achieves h ig h speed o peration w hile m a in ta in in g th e CMOS low pow er dissipation.
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TC74LVX14F/FN/FS
diode sy 171 10
diode sy 171
"DIODE" SY 171 1 g
diode ITT 172
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"DIODE" SY 171 1 g
Abstract: diode sy 171 Diode SY 345 diode sy 171 10 diode sy 170 "DIODE" SY 171 1 "DIODE" SY 171 ds 1494 1428m
Text: AD VA NC E D POWER TECHNOLOGY M IE D • □SST'IO'i 00Q 0Sfl2 fllG HAVP A d van ced po w er Te c h n o lo g y APT40M42BFN 400V 95.0A 0.042 APT35M42BFN 350V 95.0A 0.042 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOST MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise
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APT40M42BFN
APT35M42BFN
MIL-STD-750
"DIODE" SY 171 1 g
diode sy 171
Diode SY 345
diode sy 171 10
diode sy 170
"DIODE" SY 171 1
"DIODE" SY 171
ds 1494
1428m
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Halbleiterbauelemente DDR
Abstract: sy 170 diode sy-180 diode sy 171 10 diode sy-170 mikroelektronik DDR mikroelektronik Heft 12 VEB mikroelektronik SY 180 Applikation Information
Text: m o ß ^ t s ie le l- c ia n o r ill- i Information Applikation INFORMATION A PPLIKA TIO N M IK R O E L E K T R O N IK Heft 16: L E IS T U N G S -E L E K T R O N IK II Bauelemente-Sortiment der DDR -Teil 1: Dioden- VEB GLEICHRICHTERWERK STAHNSDORF im VEB Kombinat Mikroelektronik
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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diode sy 171 10
Abstract: diode sy 171 Diode SY 345 "DIODE" SY 171 "DIODE" SY 171 1 diode sy 170 LD 757 ps SY 345 APT40M42BFN Diode SY 350
Text: AD VA NC ED PO WE R T E C H N O L O G Y MIE D Hi □SST'JCH 0 0 0 0 5 0 8 AIO M A V P A dva n c ed P o w er ^ Tec h n o lo g y APT40M42BFN 400V 95.0A 0.042 APT35M42BFN 350V 95.0A 0.042 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFEp*
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0000SÃ
APT40M42BFN
APT35M42BFN
97702-1035bol
MIL-STD-750
diode sy 171 10
diode sy 171
Diode SY 345
"DIODE" SY 171
"DIODE" SY 171 1
diode sy 170
LD 757 ps
SY 345
Diode SY 350
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diode sy 171 10
Abstract: BUK436-1000B diode sy 171
Text: bSE T> m PHILIPS INTERNATIONAL 711062b □Db3cH l TDM • PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711062b
BUK436-1000B
7110fl5b
diode sy 171 10
BUK436-1000B
diode sy 171
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Halbleiterbauelemente DDR
Abstract: GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170
Text: eiecrronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenndaten der in der DD R gefertigten H albleiterbauelem ente. Die Kennwerte werden im allgem einen für eine Um gebungs temperatur von 25 °C angegeben.
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DOR102
Halbleiterbauelemente DDR
GAZ17
diode sy-250
"halbleiterwerk frankfurt"
sal41
diode sy-170
SF 127
diode say17
Halbleiter-Bauelemente DDR
SY 170
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integrated circuits equivalents list
Abstract: FCH111 Mullard Diode FCL101 7472N equivalent 7400N FCH131 7402N 7420N FJH111
Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L V E R S IO N S Mullard equivalent Type No. TTL r a n g e DTL r a n g e - RC 206 - RC 210 RC 216 RC •RC ■RC ■RC ■RC ■RC RC RC RC RC ■RC RC 224 225 226 227 231 234 236 246 261 266 286 296 Mullard
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7400N
FJH131
FCL101
FJH231
7402N
FJH221
FJH121
7420N
FJH111
7430N
integrated circuits equivalents list
FCH111
Mullard Diode
7472N equivalent
FCH131
FJH111
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diode sy 171 10
Abstract: "DIODE" SY 171 1 g diode sy 171 VK3140 DIODE SERIE SY diode sy 160 VK3120 diode sy 166 VK332 VG32
Text: Direkt betätigtes 5/2-Wege-Elektromagnetventil Weichdichtender Schieber Serie l/min 147 Kompakt/Breite 18 X Länge 68 mm Geringe Leistungsaufnahme 4W DC (Standard) 2W DC (Energiesparausführung) Kupferfreie Ausführung standardmässig Alle mit dem Medium in Kontakt stehenden
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VK3000
VK3120
VK3120Y
VK3140
VK3140Y
VV5K3-42-
VV5K3-S42-
diode sy 171 10
"DIODE" SY 171 1 g
diode sy 171
VK3140
DIODE SERIE SY
diode sy 160
VK3120
diode sy 166
VK332
VG32
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Untitled
Abstract: No abstract text available
Text: I Actuator and Actuator-LED Terminal Blocks for Use with a Base Module 170 for Actuators with Ground Earth / Shield (Screen) Connection 0.08 - 1.5 m m 2 65 V/1.5 kV/3 O 6A AW G 28 - 16 Terminal block width 5 mm / 0.197 in 4_^ 9 - 1 0 mm / 0.37 in O
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18-pole
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diode sy 171
Abstract: "DIODE" SY 171 1 diode sy 171 10 "DIODE" SY 171 "DIODE" SY 171 1 g
Text: SILICON MONOLITHIC BIPO LAR DIGITAL INTEGRATED CIRCUIT TD62083APA 8CH DARLINGTON SINK DRIVER The TD62083APA is high-voltage, high-current darlington drivers comprised of eight NPN darlington pairs. All units feature integral clamp diodes for switching inductive loads.
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TD62083APA
TD62083APA
500mA
diode sy 171
"DIODE" SY 171 1
diode sy 171 10
"DIODE" SY 171
"DIODE" SY 171 1 g
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CNY17 pulse circuit
Abstract: C1685 transistor transistor c1684 opt 300 cny17-3 NPN C1685 c1685 CNY17-2 equivalent transistor C1681 cny171 11
Text: s o PHOTOTRANSISTOR OPTOCOUPLERS M TK LEtm iltS CNY17-1 CNY17-3 CNY17-2 CNY17-4 DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. r& rfh dfe FEATURES High isolation voltage 5300 VAC RMS— 1 minute
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CNY17-1
CNY17-3
CNY17-2
CNY17-4
CNY17
STI603A
C2D79
CNY17-1:
CNY17-2:
CNY17-3;
CNY17 pulse circuit
C1685 transistor
transistor c1684
opt 300 cny17-3
NPN C1685
c1685
equivalent transistor
C1681
cny171 11
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mikroelektronik ddr
Abstract: Halbleiterbauelemente DDR VEB mikroelektronik vqb 71 A910D VQB71 "halbleiterwerk frankfurt" diode sy-170 VQB 37 u112d
Text: Halbleiter-Bauelemente Semiconductors Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenn daten der in der DDR gefertigten Halbleiterbauelem ente. Dem Anwender soll durch diese Übersicht die Auswahl der jeweils in Frage kommenden
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74hc107
Abstract: M74HC107B1N
Text: / = T M54HC107 M74HC107 S G S -T H O M S O N « [10 [ M S I g ^ ( ô i0(gS DUAL J-K FLIP FLOP WITH CLEAR • HIGH SPEED f MAX = 58 M Hz (TYP.) at VC C = 5V ■ LOW POW ER DISSIPATION lCc = 2 nA (MAX.) at TA = 25°C ■ HIGH NOISE IM M U NITY V n ih = V NIL = 2 8 % VCC (MIN.)
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M54HC107
M74HC107
54/74LS107
M74HC107
M54/74HC107
74hc107
M74HC107B1N
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sc11171
Abstract: SC11176CN SC11176CN-65 sc1117
Text: SC11171/SC1U76 High Performance CMOS Color Look-up Table SIERRA SEMICONDUCTOR □ □ □ □ □ Anti-sparkle circuitry. Compatible With the RSI 70 Video Standard. Pixel Rates Up to 65 MHz. 256k Possible Colors. Single Monolithic, High Performance CMOS. Low DAC Glitch Energy.
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SC11171/SC1U76
SC11171/SC11176
SC11171CV
SC11176CV
SC11171
I1176
SC11176
SC11171CN-35
SC11176CN
SC11176CN-65
sc1117
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Untitled
Abstract: No abstract text available
Text: PD - 9.1262D International IÜR Rectifier IRF7603 HEXFET^ Power MOSFET • Generation V Technology • Ultra Low On-Resistance • N-Channel M O SFET • Very Small SO IC Package • Low Profile < 1.1 mm • Available in Tape & Reel • Fast Switching V d ss = 30 V
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1262D
IRF7603
4A5S455
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fch131
Abstract: integrated circuits equivalents list rc 261 7400N FJJ14 FCL101 FCH131 equivalent ttl NAND gate with expander 7402N 7420N
Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC 224 •RC 225 ■RC 226 ■RC 227 ■RC 231 ■RC 234 RC 236 RC 246 RC 261 RC 266 ■RC 286 RC 296 M ullard comparable
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7400N
FJH131
FCL101
FJH231
7402N
FJH221
FJH121
7420N
FJH111
7430N
fch131
integrated circuits equivalents list
rc 261
FJJ14
FCH131 equivalent
ttl NAND gate with expander
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diode sy 171 10
Abstract: "DIODE" SY 171 1 g
Text: PD - 9.12 64 C International IOR Rectifier IRF7606 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching V qss = -30V f^DS(on) = 0.09Î2
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EIA-541.
diode sy 171 10
"DIODE" SY 171 1 g
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Halbleiterbauelemente DDR
Abstract: Dioden SY 250 diode sy-250 B250C135 u103d GD244 transistor gc 301 SAM42 diode sy 166 D172C
Text: electronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz-und Kenndaten der in der DDR getertigten Halbleiterbauelemente. Die Kennwerte werden im allgemeinen für eine Umgebungs temperatur von 25 °C angegeben.
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6x10x12
Halbleiterbauelemente DDR
Dioden SY 250
diode sy-250
B250C135
u103d
GD244
transistor gc 301
SAM42
diode sy 166
D172C
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integrated circuits equivalents list
Abstract: FCH161 FCH181 FCH191 FJJ14 7400N FCL101 equivalent 7420N FCL101 FJH111
Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS Mullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC •RC ■RC ■RC ■RC ■RC RC RC RC RC ■RC RC 224 225 226 227 231 234 236 246 261 266 286 296 Mullard comparable
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7400N
FJH131
FCL101
FJH231
7402N
FJH221
FJH121
7420N
FJH111
7430N
integrated circuits equivalents list
FCH161
FCH181
FCH191
FJJ14
FCL101 equivalent
FJH111
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FCH121
Abstract: FCL101 7400N 7490N 7402N 7420N FJH101 FJH111 FJH121 FJH131
Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC 224 •RC 225 ■RC 226 ■RC 227 ■RC 231 ■RC 234 RC 236 RC 246 RC 261 RC 266 ■RC 286 RC 296 M ullard comparable
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7400N
FJH131
FCL101
FJH231
7402N
FJH221
FJH121
7420N
FJH111
7430N
FCH121
7490N
FJH101
FJH111
FJH121
FJH131
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integrated circuits equivalents list
Abstract: FCY101 FCH151 FCH191 7400N 7402N 7420N FCL101 FJH101 FJH111
Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC 224 •RC 225 ■RC 226 ■RC 227 ■RC 231 ■RC 234 RC 236 RC 246 RC 261 RC 266 ■RC 286 RC 296 M ullard comparable
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7400N
FJH131
FCL101
FJH231
7402N
FJH221
FJH121
7420N
FJH111
7430N
integrated circuits equivalents list
FCY101
FCH151
FCH191
FJH101
FJH111
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