"gallium nitride" mosfet
Abstract: 48V MOSFET LM5113 GaN power MOSFET "gallium nitride" Half-Bridge Driver
Text: First Gate Driver for Enhancement Mode GaN Power FETs 100V Half-Bridge Driver Enables Greater Efficiency, Power Density, and Simplicity national.com/isolatedpower Gallium Nitride Power FETs Deliver New Levels of Power Density Enhancement mode Gallium Nitride GaN power FETs can
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reqM5113
LM5113
"gallium nitride" mosfet
48V MOSFET
GaN power MOSFET
"gallium nitride"
Half-Bridge Driver
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EPC8004
Abstract: No abstract text available
Text: APPLICATION NOTE: AN015 eGaN FETs for Multi-MHz Applications Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications EFFICIENT POWER CONVERSION Michael de Rooij, PhD, Johan Strydom, PhD The ultra high speed switching capabilities of gallium nitride transistors have now been
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AN015
EPC8000
ATS-54150K-C2-R0
EPC8004
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SiC-JFET
Abstract: SiC JFET Gan on silicon transistor EPC Gan transistor Gan on silicon substrate SiC jfet cascode silicon carbide JFET normally on SiC BJT 600V GaN DMOS SiC
Text: Gallium Nitride GaN versus Silicon Carbide (SiC) In The High Frequency (RF) and Power Switching Applications Introduction Work on wide bandgap materials and devices have been going on for many years. The properties of these materials are very exciting to designers because wide band gap devices promise
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Abstract: No abstract text available
Text: UCC27611 www.ti.com SLUSBA5B – DECEMBER 2012 4-A and 6-A High-Speed 5-V Drive, Optimized Single-Gate Driver Check for Samples: UCC27611 FEATURES APPLICATIONS • • • • • • 1 • • • • • • • • • • • • • • Enhancement Mode Gallium Nitride FETs
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UCC27611
14-ns
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JB TRANSISTOR SMD MARKING CODE
Abstract: transistor AE code PNP smd Block Diagram solar based ups WSON socket
Text: UCC27611 www.ti.com SLUSBA5B – DECEMBER 2012 4-A and 6-A High-Speed 5-V Drive, Optimized Single-Gate Driver Check for Samples: UCC27611 FEATURES APPLICATIONS • • • • • • 1 • • • • • • • • • • • • • • Enhancement Mode Gallium Nitride FETs
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UCC27611
14-ns
JB TRANSISTOR SMD MARKING CODE
transistor AE code PNP smd
Block Diagram solar based ups
WSON socket
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Untitled
Abstract: No abstract text available
Text: UCC27611 www.ti.com SLUSBA5A – DECEMBER 2012 4-A and 6-A High-Speed 5-V Drive, Optimized Single-Gate Driver Check for Samples: UCC27611 FEATURES APPLICATIONS • • • • • • 1 • • • • • • • • • • • • • • Enhancement Mode Gallium Nitride FETs
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UCC27611
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Untitled
Abstract: No abstract text available
Text: "Developed for EDN. For more related features, blogs and insight from the EE community, go to www.EDN.com" High-Voltage Silicon MOSFETs, GaN, and SiC: All have a place Philip Zuk, Director of Market Development, High-Voltage MOSFET Group, Vishay Siliconix
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MGCF21
Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount
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L8821P
LB421
L8821P
LP721
SM341
LQ821
SQ701
SR401
MGCF21
LY942
MOSFET 50 amp 1000 volt
Gx4002
5 watt hf mosfet
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LK141
Abstract: 60W VHF TV RF amplifier
Text: An Introduction to Polyfet RF Devices Who is Polyfet RF Devices? Established in 1987, Polyfet RF Devices is a California based manufacturer of broadband LDMOS, VDMOS, and GaN power transistors and power modules. Polyfet’s Financials • • • • • Private corporation
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ISO9000
5208A
50Vdc
4Q2012.
LK141
60W VHF TV RF amplifier
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY RFJS3006F rGAN-HVTM 650V SSFET With Ultra-Fast Freewheeling Diode The RFJS3006F is a 30A, 650V normally-off sourced switched FET SSFET GaN HEMT providing the same insulated gate ease of use as a power MOSFET or an IGBT, but enabling much higher efficiency at much higher PWM frequencies. The SSFET uses
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RFJS3006F
RFJS3006F
DS130809
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MOSFET P-channel SOT-23-6
Abstract: cl5000 transistor EP 430 LM5114
Text: LM5114 Single 7.6A Peak Current Low-Side Gate Driver General Description Features The LM5114 is designed to drive low-side MOSFETs in boost type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The
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LM5114
LM5114
OT-23-6
MOSFET P-channel SOT-23-6
cl5000
transistor EP 430
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4G base station power amplifier
Abstract: No abstract text available
Text: Virtuous impact of higher RF PA efficiency Circle of Green Rev. 2 — 5 July 2012 White paper Document information Info Content Author s Maury Wood – Program Manager, Operator marketing, NXP Semiconductors. The author acknowledges the contribution of the following NXP innovators who
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Texas Instruments Power of GaN
Abstract: Texas Instruments GaN "gallium nitride" mosfet
Text: LM5114 Single 7.6A Peak Current Low-Side Gate Driver General Description Features The LM5114 is designed to drive low-side MOSFETs in boost type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The
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LM5114
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OT-23-6
MF06A
Texas Instruments Power of GaN
Texas Instruments GaN
"gallium nitride" mosfet
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MAX5048CAUT
Abstract: Low Power PWM controller 6-pin
Text: EVALUATION KIT AVAILABLE MAX5048C General Description The MAX5048C is a high-speed MOSFET driver capable of sinking/sourcing 7A/3A peak currents. This device takes logic input signals and drives a large external MOSFET. The device has inverting and noninverting
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MAX5048C
MAX5048C
MAX5048CAUT
Low Power PWM controller 6-pin
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Untitled
Abstract: No abstract text available
Text: EVALUATION KIT AVAILABLE MAX5048C General Description The MAX5048C is a high-speed MOSFET driver capable of sinking/sourcing 7A/3A peak currents. This device takes logic input signals and drives a large external MOSFET. The device has inverting and noninverting
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MAX5048C
MAX5048C
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MAX5048
Abstract: No abstract text available
Text: LM5114 Single 7.6A Peak Current Low-Side Gate Driver General Description Features The LM5114 is designed to drive low-side MOSFETs in boost type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The
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LM5114
MAX5048
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Untitled
Abstract: No abstract text available
Text: WHITE PAPER: WP014 eGaN FETs in Wireless Power Transfer Systems eGaN® FETs in Wireless Power Transfer Systems EFFICIENT POWER CONVERSION Alex Lidow, Ph.D., CEO and Michael de Rooij, Ph.D., Executive Director of Applications Engineering Introduction The popularity of wireless energy transfer has increased over the last few years and in particular for applications targeting portable device charging. In this article,
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WP014
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208 SOT-23-6
Abstract: MOSFET P-channel SOT-23-6 sot23 Flyback Converter
Text: LM5114 Single 7.6A Peak Current Low-Side Gate Driver General Description Features The LM5114 is designed to drive low-side MOSFETs in boost type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The
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LM5114
LM5114
208 SOT-23-6
MOSFET P-channel SOT-23-6
sot23 Flyback Converter
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BC337 NPN transistor
Abstract: AN2042 mercury smps circuit diagram emergency fluorescent light schematic diagram VIPER22A Circuit Diagrams of China LED Emergency light VIPER flyback 10W UV led diode 200 nm peak 1W Viper22 dali bridge schematic
Text: AN2042 Application note VIPower: dimmable driver for high brightness LEDs with VIPer22A-E Introduction This application note introduces an innovative solution to drive high brightness 1W LEDs Light Emitting Diode , using VIPer22A-E in flyback configuration with output current control.
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AN2042
VIPer22A-E
VIPer22A-E
BC337 NPN transistor
AN2042
mercury smps circuit diagram
emergency fluorescent light schematic diagram
VIPER22A
Circuit Diagrams of China LED Emergency light
VIPER flyback 10W
UV led diode 200 nm peak 1W
Viper22
dali bridge schematic
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Untitled
Abstract: No abstract text available
Text: 1EDI EiceDRIVER Compact 1EDI20N12AF Single Channel MOSFET and GaN HEMT Gate Driver IC 1EDI20N12AF Preliminary Data Sheet Rev. 1.02, 2014-04-08 Industrial Power Control Edition 2014-04-08 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG
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LTTS e3
Abstract: gbs transistors
Text: Commerce Control List Supplement No. 1 to Part 774 CATEGORY 3 - ELECTRONICS A. “END ITEMS,” “EQUIPMENT,” “ACCESSORIES,” “ATTACHMENTS,” “PARTS,” “COMPONENTS,” AND “SYSTEMS” Note 1: The control status of equipment and “components” described in 3A001 or 3A002,
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3A001
3A002,
LTTS e3
gbs transistors
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1000 watt buck converter scheme
Abstract: 48v to 24v buck buck pfc flyback led driver with pwm dimming problems lm5010 and slope of voltage Halogen lighting transformer SMD led warm white Aluminum Base LED PCB Application Note Nationals LM2623 buck converter vout 100v
Text: High-Brightness LED Lighting Solutions www.national.com/LED 2008 Vol. 2 High-Brightness LED Lighting . 2-3 LED Drivers and Controllers . 4-5 Switched-Capacitor Solutions . 6 Inductive-Boost LED Drivers . 7-8
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dimmer MR16 SCHEMATIC
Abstract: ultra bright LED backlight driver schematic LM3409 48v to 24v buck gallium phosphide band structure smps circuit diagrams 12v 5a LM3402 LM3407 LM3445 LM3421
Text: LED Drivers for High-Brightness Lighting Solutions Guide national.com/LED 2009 Vol. 1 PWM Dimming Signal Temp Sensor MCU 3.3V 48V General Illumination LED Drivers Technology Overview Product Highlights Application Information Design Examples Articles AC/DC
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550264-006EU
dimmer MR16 SCHEMATIC
ultra bright LED backlight driver schematic
LM3409
48v to 24v buck
gallium phosphide band structure
smps circuit diagrams 12v 5a
LM3402
LM3407
LM3445
LM3421
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Untitled
Abstract: No abstract text available
Text: LM5114 www.ti.com SNVS790E – JANUARY 2012 – REVISED MARCH 2013 LM5114 Single 7.6A Peak Current Low-Side Gate Driver Check for Samples: LM5114 FEATURES DESCRIPTION • The LM5114 is designed to drive low-side MOSFETs in boost type configurations or to drive secondary
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