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    "RAD" SRAM Search Results

    "RAD" SRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    HM3-6504B-9 Rochester Electronics LLC Standard SRAM, 4KX1, 220ns, CMOS, PDIP18 Visit Rochester Electronics LLC Buy
    HM1-6516-9 Rochester Electronics LLC Standard SRAM, 2KX8, 200ns, CMOS, CDIP24 Visit Rochester Electronics LLC Buy
    27S03ADM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy
    29705/BXA Rochester Electronics LLC 29705 - SRAM Visit Rochester Electronics LLC Buy

    "RAD" SRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BU-63825

    Abstract: No abstract text available
    Text: www.ddc-web.com MIL-STD-1553 Terminals for Space Applications: MODEL:BU-63825 925 and BU-63705 FEATURES: BU-63825(925): BU-63705: • Drop-in Replacement for BU-61582 (83) • Drop-in Replacement for BU-65142 • Rad Tolerant & Rad Hard Versions* • Rad Tolerant & Rad Hard Versions*


    Original     		PDF MIL-STD-1553 BU-63825 BU-63705 BU-63705: BU-61582 BU-65142 V/-15V, V/-12V 1-800-DDC-5757

    Atmel 652

    Abstract: AT65609EHV AT65609EHV-DJ40SR Atmel+652
    Text: AT65609EHV Rad Hard, 5V, 128K x 8 Very Low Power CMOS SRAM DATASHEET Features z Asynchronous SRAM z Operating Voltage: 5V z Read Access Time: 40 ns z Write Cycle Time: 30 ns z Very Low Power Consumption Pre-RAD z z Active: 275 mW (Max) Standby: 44 mW (Max)


    Original     		PDF AT65609EHV MIL-PRF38535 M65608E Atmel 652 AT65609EHV AT65609EHV-DJ40SR Atmel+652

    Untitled

    Abstract: No abstract text available
    Text: AT65609EHV Rad Hard, 5V, 128K x 8 Very Low Power CMOS SRAM DATASHEET Features z Asynchronous SRAM z Operating Voltage: 5V z Read Access Time: 40 ns z Write Cycle Time: 30 ns z Very Low Power Consumption Pre-RAD z z Active: 275 mW (Max) Standby: 44 mW (Max)


    Original     		PDF AT65609EHV MIL-PRF38535 M65608E

    212A625

    Abstract: No abstract text available
    Text: 212A625 512K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with RHCMOS5XL 0.35 µm Process for Strategic rad hard or R25 0.25 µm Commercial process for rad hard • Radiation Hardened Total Dose hardness through


    Original     		PDF 212A625 1x106 100Krads 1x1014 1x109 1x10-11 1x1012 AS9000, 212A625

    Untitled

    Abstract: No abstract text available
    Text: 212A625 512K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with RHCMOS5XL 0.35 µm Process for Strategic rad hard or R25 0.25 µm Commercial process for rad hard • Radiation Hardened Total Dose hardness through


    Original     		PDF 212A625 40-Lead 1x106 100Krads 1x1014 1x109 AS9000, x5040)

    HR2000

    Abstract: HR2010 HR2065 HR2090 HR2210 HR2125 HR2340 "rad" sram
    Text: RICMOS GATE ARRAYS HR2000 FAMILY FEATURES • Total Dose Hardness ≥1x106 rad SiO2 • Fabricated on Honeywell’s Radiation Hardened 0.65 µmLeff RICMOS™ IV Bulk Process • Dose Rate Upset Hardness ≥1x109 rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)


    Original     		PDF HR2000 1x106 1x109 1x1012 1x10-10 1x1014/cm2 HR2000 HR2010 HR2065 HR2090 HR2210 HR2125 HR2340 "rad" sram

    ERC32SC

    Abstract: 4-bit even parity checker circuit diagram circuit diagram of wireless door lock system sparc v7 circuit diagram of wireless door lock system sin Trap floating point ERC32 TSC695F erc32 trap
    Text: TSC695F Rad-Hard Rad-Hard 32-bit SPARC SPARC 32-bit Embedded Processor Processor Embedded User’s Manual Rev.F - 22 March, 2001 1 TSC695F User’s Manual Information Foreword Atmel Nantes S.A. reserves the right to make changes in the products or specifications contained in this document


    Original     		PDF TSC695F 32-bit TSC695E ERC32SC 4-bit even parity checker circuit diagram circuit diagram of wireless door lock system sparc v7 circuit diagram of wireless door lock system sin Trap floating point ERC32 TSC695F erc32 trap

    TSC695E

    Abstract: ERC32SC
    Text: TSC695E Rad-Hard Rad-Hard 32-bit SPARC SPARC 32-bit Embedded Processor Processor Embedded User’s Manual Rev.E - September 2000 1 TSC695E User’s Manual Information Foreword Atmel Nantes S.A. reserves the right to make changes in the products or specifications contained in this document


    Original     		PDF TSC695E 32-bit TSC695E ERC32SC

    HR2065

    Abstract: HR2090 HR2010 HR2125 HR2210 HR2340 HR2000
    Text: RICMOS GATE ARRAYS HR2000 FAMILY FEATURES • Total Dose Hardness ≥1x106 rad SiO2 • Fabricated on Honeywell’s Radiation Hardened 0.65 µmLeff RICMOS™ IV Bulk Process • Dose Rate Upset Hardness ≥1x109 rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)


    Original     		PDF HR2000 1x106 1x109 1x1012 1x10-10 1x1014/cm2 HR2000 HR2065 HR2090 HR2010 HR2125 HR2210 HR2340

    ed19 smd diode

    Abstract: No abstract text available
    Text: SMJ320C6701-SP www.ti.com SGUS030F – APRIL 2000 – REVISED SEPTEMBER 2013 RAD-TOLERANT CLASS-V FLOATING-POINT DIGITAL SIGNAL PROCESSOR Check for Samples: SMJ320C6701-SP FEATURES 1 • • • • 23456 • • • • • 1 2 3 4 5 6 Rad-Tolerant: 100-kRad Si TID


    Original     		PDF SMJ320C6701-SP SGUS030F 100-kRad 89MeV-cm2/mg SMJ320C6701 140-MHz 32-Bit C6201 MIL-PRF-38535 ed19 smd diode

    Untitled

    Abstract: No abstract text available
    Text: SMJ320C6701-SP www.ti.com SGUS030F – APRIL 2000 – REVISED SEPTEMBER 2013 RAD-TOLERANT CLASS-V FLOATING-POINT DIGITAL SIGNAL PROCESSOR Check for Samples: SMJ320C6701-SP FEATURES 1 • • • • 23456 • • • • • 1 2 3 4 5 6 Rad-Tolerant: 100-kRad Si TID


    Original     		PDF SMJ320C6701-SP SGUS030F 100-kRad 89MeV-cm2/mg SMJ320C6701 140-MHz 32-Bit C6201 MIL-PRF-38535

    ed12 smd diode

    Abstract: smd parts nomenclature tutorial ed13 smd diode ed28 smd diode ed19 smd diode 1-Aug-2008 EA7 SMD Code
    Text: SMJ320C6701ĆSP RAD-TOLERANT CLASS V, FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS030C − APRIL 2000 − REVISED − NOVEMBER 2007 D D D D D D D D D Rad−Tolerant: 100 kRad Si TID SEL Immune at 89MeV−cm2/mg LET Ions QML−V Qualified, SMD 5962−98661


    Original     		PDF SMJ320C6701SP SGUS030C 89MeV-cm2/mg SMJ320C6701 32-Bit C6201 MIL-PRF-38535 ed12 smd diode smd parts nomenclature tutorial ed13 smd diode ed28 smd diode ed19 smd diode 1-Aug-2008 EA7 SMD Code

    ed15 smd diode

    Abstract: ed28 smd diode ed31 smd diode ed22 smd diode
    Text: SMJ320C6701ĆSP RAD-TOLERANT CLASS V, FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS030C − APRIL 2000 − REVISED − NOVEMBER 2007 D D D D D D D D D Rad−Tolerant: 100 kRad Si TID SEL Immune at 89MeV−cm2/mg LET Ions QML−V Qualified, SMD 5962−98661


    Original     		PDF SMJ320C6701SP SGUS030C 89MeV-cm2/mg SMJ320C6701 32-Bit C6201 MIL-PRF-38535 ed15 smd diode ed28 smd diode ed31 smd diode ed22 smd diode

    DIODE SMD t4

    Abstract: No abstract text available
    Text: SMJ320C6701ĆSP RAD-TOLERANT CLASS V, FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS030C − APRIL 2000 − REVISED − NOVEMBER 2007 D D D D D D D D D Rad−Tolerant: 100 kRad Si TID SEL Immune at 89MeV−cm2/mg LET Ions QML−V Qualified, SMD 5962−98661


    Original     		PDF SMJ320C6701SP SGUS030C 89MeV-cm2/mg SMJ320C6701 32-Bit C6201 MIL-PRF-38535 DIODE SMD t4

    HS1-65647RH

    Abstract: HS1-65647RH-8 HS1-65647RH-Q HS-65647RH HS9-65647RH HS9-65647RH-8 HS9-65647RH-Q HS9A-65647RH-Q
    Text: HS-65647RH Radiation Hardened 8K x 8 SOS CMOS Static RAM August 1995 Features Functional Diagram • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD Si - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10-12 Errors/Bit-Day


    Original     		PDF HS-65647RH 100mA -55oC 125oC HS1-65647RH HS1-65647RH-8 HS1-65647RH-Q HS-65647RH HS9-65647RH HS9-65647RH-8 HS9-65647RH-Q HS9A-65647RH-Q

    Untitled

    Abstract: No abstract text available
    Text: SMJ320C6701-SP www.ti.com SGUS030F – APRIL 2000 – REVISED SEPTEMBER 2013 RAD-TOLERANT CLASS-V FLOATING-POINT DIGITAL SIGNAL PROCESSOR Check for Samples: SMJ320C6701-SP FEATURES 1 • • • • 23456 • • • • • 1 2 3 4 5 6 Rad-Tolerant: 100-kRad Si TID


    Original     		PDF SMJ320C6701-SP SGUS030F 100-kRad 89MeV-cm2/mg SMJ320C6701 140-MHz 32-Bit C6201 MIL-PRF-38535

    ed15 smd diode

    Abstract: smd code EA2 MCBG004
    Text: SMJ320C6701ĆSP RAD-TOLERANT CLASS V, FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SGUS030C − APRIL 2000 − REVISED − NOVEMBER 2007 D D D D D D D D D Rad−Tolerant: 100 kRad Si TID SEL Immune at 89MeV−cm2/mg LET Ions QML−V Qualified, SMD 5962−98661


    Original     		PDF SMJ320C6701SP SGUS030C 89MeV-cm2/mg SMJ320C6701 32-Bit C6201 MIL-PRF-38535 ed15 smd diode smd code EA2 MCBG004

    ed15 smd diode

    Abstract: ed13 smd diode ed19 smd diode ed18 smd diode ed22 smd diode SMD ED11 diode ed28 smd diode ed27 smd diode ed31 smd diode ed23 smd diode
    Text: SMJ320C6701-SP www.ti.com . SGUS030E – APRIL 2000 – REVISED JULY 2009 RAD-TOLERANT CLASS-V FLOATING-POINT DIGITAL SIGNAL PROCESSOR


    Original     		PDF SMJ320C6701-SP SGUS030E 100-kRad 89MeV-cm2/mg SMJ320C6701 140-MHz 32-Bit C6201 MIL-PRF-38535 ed15 smd diode ed13 smd diode ed19 smd diode ed18 smd diode ed22 smd diode SMD ED11 diode ed28 smd diode ed27 smd diode ed31 smd diode ed23 smd diode

    ed15 smd diode

    Abstract: ed12 smd diode ed19 smd diode EA7 SMD Code ed28 smd diode ed13 smd diode
    Text: SMJ320C6701-SP www.ti.com. SGUS030D – APRIL 2000 – REVISED MARCH 2009 RAD-TOLERANT CLASS-V FLOATING-POINT DIGITAL SIGNAL PROCESSOR


    Original     		PDF SMJ320C6701-SP SGUS030D 100-kRad 89MeV-cm2/mg SMJ320C6701 140-MHz 32-Bit C6201 MIL-PRF-38535 ed15 smd diode ed12 smd diode ed19 smd diode EA7 SMD Code ed28 smd diode ed13 smd diode

    Untitled

    Abstract: No abstract text available
    Text: 3 HS-65647RH Radiation Hardened December1992 8K x 8 SOS CMOS Static RAM Functional Diagram Features • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 10s RAD SI - Transient Upset >1 x 1011 RAD (Siys - Single Event Upset < 1 x 10'12 Errors/Bit-Day


    OCR Scan     		PDF r1992 HS-65647RH 100mA 313x291

    207K AW

    Abstract: No abstract text available
    Text: Honeywell HR2000 RICMOS " GATE ARRAYS FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.65 nm RICMOS IV Bulk Process Total Dose Hardness of >1x106 rad S i02 Dose Rate Upset Hardnes >1x109 rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)


    OCR Scan     		PDF 1x10M 1x106 1x109 HR2000 HR2000 207K AW

    honeywell memory sram

    Abstract: 419B3E
    Text: b3E D 4551072 DGQ1D3M 417 • H 0 N 3 Honeywell RICMOS SEA OF TRANSISTORS GATE ARRAY HR2210 FEATURES OTHER RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Si02 • Dose Rate Upset Hardness > 1x10° rad(Si)/sec • Dose Rate Survivability > 1x1012rad(Si)/sec


    OCR Scan     		PDF HR2210 1x106 1x1012rad 1x101 honeywell memory sram 419B3E

    Untitled

    Abstract: No abstract text available
    Text: HS-65647RH Semiconductor Radiation Hardened 8K x 8 SOS CMOS Static RAM August 1995 Functional Diagram Features • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD Si - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10"12 Errors/Bit-Day


    OCR Scan     		PDF HS-65647RH 100mA

    sem ad 222m

    Abstract: No abstract text available
    Text: HS-65647RH HARRIS S E M I C O N D U C T O R Radiation Hardened 8K x 8 SOS CMOS Static RAM August 1995 Features Functionai Diagram - Total Dose 3 x 10s RAD Si m Al R OW - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10'12 Errors/Bit-Day


    OCR Scan     		PDF HS-65647RH 100mA sem ad 222m