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    "SOJ 26" DRAM 80 NS Search Results

    "SOJ 26" DRAM 80 NS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CY7C429-20VC Rochester Electronics LLC FIFO, 2KX9, 20ns, Asynchronous, CMOS, PDSO28, 0.300 INCH, SOJ-28 Visit Rochester Electronics LLC Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy

    "SOJ 26" DRAM 80 NS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MCM91430

    Abstract: Motorola CMOS Dynamic RAM 1M Motorola CMOS Dynamic RAM 1M x 1 1mx1 DRAM DIP MCM511000A mcm511000 1K x4 static ram application note Motorola CMOS Dynamic RAM 16m x 32 TSOP 400 86 MCM69F536B
    Text: Memory Products In Brief . . . Motorola’s memory product portfolio has been expanded to support a broad range of engineering applications. Included in this portfolio are asynchronous devices with access times of 6 ns at 256K–bit density, 6 ns at 5 V 1


    Original     		PDF stan00C 1Mx16 MCM4L4400B MCM5L4100A MCM54100A 256Kx16 512Kx8 MCM5L4100A MCM54100A MCM91430 Motorola CMOS Dynamic RAM 1M Motorola CMOS Dynamic RAM 1M x 1 1mx1 DRAM DIP MCM511000A mcm511000 1K x4 static ram application note Motorola CMOS Dynamic RAM 16m x 32 TSOP 400 86 MCM69F536B

    IBM025161LG5D60

    Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
    Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.


    Original     		PDF MB81141621 MB81141622 MB81G8322 MB81116421 TC59R1608 2ns500MHz TC59R0808 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT

    hitachi hn27c256

    Abstract: hm514280 256K RAM HM62256 1M x 16-Bit x 4 Banks synchronous sRAM BLS 16K-X hitachi HM6264 Hitachi 32k static RAM 16M x8 55ns 72 pin flash dimm sop-40 16-bit hm6264 application note
    Text: HITACHI Memory Devices CONTENTS • • • • VOLATILE - Dynamic RAM •Fast Page Mode •EDO •Synchronous - Dynamic RAM Modules - Static RAM 10 NON VOLATILE - EPROM - EEPROM / Flash - MaskROM 12 14 15 2 APPLICATION SPECIFIC - Video RAM - FIFO / LINE / Frame RAM /


    Original     		PDF HM514100 HM514400 HM514800 HM51S4800 HM514900 HN62W4116 HN62W5016N HM62W4018N 50/40ns) hitachi hn27c256 hm514280 256K RAM HM62256 1M x 16-Bit x 4 Banks synchronous sRAM BLS 16K-X hitachi HM6264 Hitachi 32k static RAM 16M x8 55ns 72 pin flash dimm sop-40 16-bit hm6264 application note

    3524CP

    Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
    Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS


    Original     		PDF HB56U132 HB56H132 HB56U232 HB56H232 HN62W454B 512kx8 256kx16 HN62W4416N 16Mbit 1Mx16 3524CP 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024

    LP 1610

    Abstract: fast page mode dram controller IBM0118160B1M IBM0118160P1M
    Text: IBM0118160 1M x 1610/10, 5.0V. IBM0118160P1M x 1610/10, 3.3V, LP, SR. IBM0118160M 1M x 1610/10, 5.0V, LP, SR. IBM0118160B1M x 1610/10, 3.3V. IBM0118160 IBM0118160M IBM0118160B IBM0118160P 1M x 16 10/10 DRAM Features • 1,048,576 word by 16 bit organization


    Original     		PDF IBM0118160 IBM0118160P1M IBM0118160M IBM0118160B1M IBM0118160M IBM0118160B IBM0118160P LP 1610 fast page mode dram controller

    IBM0116400B4M

    Abstract: IBM01164004M IBM0116400M
    Text: IBM01164004M x 412/10, 5.0V. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400B4M x 412/10, 3.3V. IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply


    Original     		PDF IBM01164004M IBM0116400P IBM0116400M IBM0116400B4M IBM0116400 IBM0116400M IBM0116400B IBM0116400P

    IBM01164004M

    Abstract: IBM0116400B4M IBM0116400M IBM0116400P
    Text: IBM01164004M x 412/10, 5.0V. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400B4M x 412/10, 3.3V. IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply


    Original     		PDF IBM01164004M IBM0116400P IBM0116400M IBM0116400B4M IBM0116400 IBM0116400M IBM0116400B IBM0116400P

    Untitled

    Abstract: No abstract text available
    Text: GMM7402000CS/SG-60/70/80 LG Semicon Co., Ltd. Description 2,097,152 WORDS x 40 BIT CMOS DYNAMIC RAM MODULE Features The GM M 7402000CS/SG is a 2M x 40 bits Dynamic RAM M ODULE which is assembled 20 pieces o f 1M x 4 bit DRAM s in 20/26 pin SOJ package on both side the


    OCR Scan     		PDF GMM7402000CS/SG-60/70/80 7402000CS/SG GMM7402000CS/SG 7402000CS 7402000CSG GMM7402000CS/SG R62C1

    Untitled

    Abstract: No abstract text available
    Text: GMM7321010CS/SG-60/70/80 LG Semicon Co.,Ltd. 1,048,576 WORDS x 32 BIT CMOS EDO DYNAMIC RAM MODULE Features Description The G M M 7321010CS/SG is an IM x 32 bits Dynamic RAM M ODULE which is assembled 8 pieces o f 1M x 4bit EDO DRAM s in 20/26 pin SOJ package on single


    OCR Scan     		PDF GMM7321010CS/SG 7321010CS/SG 7321010C GMM7321010CS/SG-60/70/80 732101OBS GMM7321010CS/SG

    Untitled

    Abstract: No abstract text available
    Text: GMM7362000CS/SG-60/70/80 LG Semicon Co., Ltd. Description The G M M 7362000CS/SG is a 2M x 36 bits Dynam ic RAM MODULE which is assem bled 16 pieces o f 1M x 4bit DRAMs in 20/26 pin SOJ package, and 8 pieces o f 1M x 1 bit DRAM s on the printed circuit board


    OCR Scan     		PDF GMM7362000CS/SG 7362000CS/SG GMM7362000CS/SG-60/70/80 GMM7362000CS/SG

    MH1M09B0AJ7

    Abstract: 5m41000
    Text: MITSUBISHI LSIs DRAM MODULE FAST PAGE MODE DYNAMIC RAM 1M 9 9 9 M. BIT Max. Type name Access time Load memory Outward dimensions Data sheet W x H x D (mm) page (ns) MH1M09B0AJ-7 70 MH1M09B0AJ-8 80 MH1M09B0AJA-7 70 88.9 x 1 7 .2 x 5 .0 8 3 /1 4 MH1M09B0AJA-8


    OCR Scan     		PDF MH1M09B0AJ-7 MH1M09B0AJ-8 MH1M09B0AJA-7 MH1M09B0AJA-8 MH1M09B0CJ-7 MH1M09B0CJ-8 M5M44400BJ 5M41000BJ M09B0AJ-7 M09B0AJA-7 MH1M09B0AJ7 5m41000

    GM76C256all

    Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410
    Text: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60


    OCR Scan     		PDF GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C GM71C10006UBLJ/BLZ-60 GM71C10006UBLJ/BLZ-70 GM71C10006UBLJ/BLZ-80 351MxB GM23C8000A/AF 32DIP 32SOP GM76C256all 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410

    msm514260c

    Abstract: MSM514256C edo 16m x 32
    Text: E2G0004-17-42 Product Overview O K I Semiconductor Product Overview DRAM H H 5V 1M xT~1— I MSM5110OOC/CL H 256K X 4 1— I MSM514256C/CL j 128K X 8 h i MSM518126/L MSM518128/L I 64K X 16 M MSM511664C/CL MSM511666C/CL 2M~~hj 2M X 1 I— I M 3M 512100/T 1M X 2 I— ì MSM512200/L~


    OCR Scan     		PDF E2G0004-17-42 MSM5110OOC/CL MSM514256C/CL MSM518126/L MSM518128/L MSM511664C/CL MSM511666C/CL 512100/T MSM512200/L~ MSM512800C msm514260c MSM514256C edo 16m x 32

    GM76C88AL FW

    Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
    Text: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20


    OCR Scan     		PDF GM71C1000B/BJ/BZ-60 GM71C1000B/BJ/BZ-70 GM71C1Q0 B/BJ/BZ-80 GM71C1000BL/BLJ/BLZ-60 GM71C1OOOBL/BLJ/BLZ- GM71C1000BL/BIJ/BLZ-80 200uA) 512cydes/8ms 18DIP GM76C88AL FW 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8

    SAM25

    Abstract: m5412222 Sam 44
    Text: O K I Semiconductor Product Overview Product Overview MSM54C864 r| 512K j— I 64K x 8 MSM54C865 r I MSM514252A I 256K x 4 h i-L— H MSM514262 D O ' H MSM518121A~ H 128K x 8 hi 1MSM518122 Multiport | I MSM548262 256K x 8 h{ 2M I MSM548263


    OCR Scan     		PDF MSM54C864 MSM54C865 MSM514252A MSM514262 MSM518121A~ 1MSM518122 MSM548262 MSM548263 MSM5416262" MSM5416263 SAM25 m5412222 Sam 44

    KM44C4100AJ

    Abstract: KM41C4000CJ
    Text: DRAM MODULE 4 Mega Byte KMM5941OOAN Fast Page Mode 4M x9 DRA M S IM M , 2K Refresh , 5V Using 16M DRAM with 400 mil Package G E N E R A L DES C R IPTIO N The S am sung KM M 594100A N is a 4M bit x 9 FEATURES • Performance Range: D ynam ic RAM high de nsity m em ory module. The


    OCR Scan     		PDF KMM5941OOAN 94100A 24-pin 20-pin 30-pin 594100AN KMM594100AN KM44C4100AJ KM41C4000CJ

    Untitled

    Abstract: No abstract text available
    Text: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • Low Power Dissipation • 4 ,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4 096 Refresh Cycles


    OCR Scan     		PDF IBM0116400 IBM0116400M IBM0116400B IBM0116400P 110ns 200nA 300nA IBM0116400P 0116400B

    Untitled

    Abstract: No abstract text available
    Text: WTS'.'3'SH' LS Is ORAM VOD’JLE FAST PAGE MODE DYNAMIC RAM 4M x 8 O 3 ^ 2 M BIT Max. Access Type name time Load memory Outward dimensions Data sheet W x H x D (mm) page (ns) MH4M08B0NJ-6 ★ 60 MH4M08B0NJ-7 ★ 70 M H4M08B0N J-8 ★ 80 M H4M08B0 J A-6 ★


    OCR Scan     		PDF MH4M08B0NJ-6 MH4M08B0NJ-7 H4M08B0N H4M08B0 MH4M08B0JA-7 MH4M08B0JA-8 M5M44100BJ MH4M08B0JA-6 33554432-BIT

    014400B

    Abstract: No abstract text available
    Text: IBM 014400B IBM 014400 IBM 014400C IB M 014400A 1M x 4 D R A M Features • 1 ,0 4 8 ,5 7 6 word by 4 bit organization • P ow er Supply: 3 .3 V ± 0 .3 V or 5 .0 V ± 0 .5 V • 1 0 2 4 refresh c y d e s /1 6 m s • High P erform ance: • - Active m ax


    OCR Scan     		PDF 014400B 014400C 14400A 110ns 130ns 4DSU-00 350mil; 06H0059 MMDD34DSU-00 300mil;

    Untitled

    Abstract: No abstract text available
    Text: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)


    OCR Scan     		PDF IBM0116400 IBM0116400M IBM0116400B IBM0116400P 110ns 200nA 300nA SA14-4203-04

    Untitled

    Abstract: No abstract text available
    Text: IBM014400 IBM014400M IBM014400B IBM014400P 1M X 4 10/10 DRAM Features • 1,048,576 word by 4 bit organization Power Dissipation - Active max • Power Supply: 3.3 ± 0.3V or 5.0 ± 0.5V - 85 mA / 70 mA (5.0V ) - 95 mA / 80 mA (3.3V) - Standby Current: T TL Inputs (max)


    OCR Scan     		PDF IBM014400 IBM014400M IBM014400B IBM014400P 110ns 130ns Fa00mil;

    IBM0117400T1 -60

    Abstract: No abstract text available
    Text: i = = = - = • = I B M 0 1 I B M 0 1 1 7 4 0 0 B P relim in ary 1 7 4 0 0 4M x 4 DR AM Features • 4,194,304 w ord by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V pow er supply • 2048 refresh cyd e s/32 m s • Low Power Dissipation - A c tiv e m a x -140m A /125m A /110m A /100m A


    OCR Scan     		PDF -140m /125m /110m /100m 43G9648 MMDD28DSU-00 IBM0117400T1 -60

    Untitled

    Abstract: No abstract text available
    Text: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4 ,194,304 word by 4 bit organization • Single 3.3V ± 0 .3V or 5.0V ± 0 .5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)


    OCR Scan     		PDF IBM0116400 IBM0116400M IBM0116400B IBM0116400P 350ns 350ns)

    DD01B

    Abstract: No abstract text available
    Text: IBM0118160 IBM0118160M IBM0118160B IBM0118160P 1 M x 16 10/10 DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 1024 Refresh Cycles - 16 ms Refresh Rate (SP version)


    OCR Scan     		PDF IBM0118160 IBM0118160M IBM0118160B IBM0118160P 200jiA 350ns DD01b