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    ,TRANSISTOR SMD 4800 Search Results

    ,TRANSISTOR SMD 4800 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ,TRANSISTOR SMD 4800 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet 4800

    Abstract: ,mosfet smd 4800 4800 power mosfet 4800 mosfet 2SJ606 ,Transistor smd 4800
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SJ606 TO-263 Unit: mm +0.1 1.27-0.1 Features MAX. VGS = -4.0 V, ID =-42 A Low Ciss: Ciss = 4800 pF TYP. 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Built-in gate protection diode 5.60 RDS(on)2 = 23m +0.2 4.57-0.2 +0.2


    Original     		PDF 2SJ606 O-263 --42A mosfet 4800 ,mosfet smd 4800 4800 power mosfet 4800 mosfet 2SJ606 ,Transistor smd 4800

    BUZ111SL

    Abstract: Q67040-S4003-A2 SPP80N05
    Text: BUZ111SL SPP80N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code


    Original     		PDF BUZ111SL SPP80N05L O-220 Q67040-S4003-A2 28/Jan/1998 BUZ111SL Q67040-S4003-A2 SPP80N05

    SPP80N05L

    Abstract: BUZ111SL Q67040-S4003-A2
    Text: BUZ111SL SPP80N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code


    Original     		PDF BUZ111SL SPP80N05L O-220 Q67040-S4003-A2 28/Jan/1998 SPP80N05L BUZ111SL Q67040-S4003-A2

    SMD Transistor dj rm

    Abstract: complementary bipolar transistor driver schematic Z-Power P7 TRANSISTOR SMD mosfet driver cree mc-e driver TRANSISTOR SMD mosfet power 882 smd ZXLD1320 SMD Transistor dj diode smd ed 49
    Text: A Product Line of Diodes Incorporated DN95 2.8A high current LED driving using ZXLD1320 with external power switch Ray Liu, Applications engineer, Diodes Incorporated Introduction In the past decade, solid state lighting devices have gained popularity. High brightness LEDs are


    Original     		PDF ZXLD1320 curre41 SMD Transistor dj rm complementary bipolar transistor driver schematic Z-Power P7 TRANSISTOR SMD mosfet driver cree mc-e driver TRANSISTOR SMD mosfet power 882 smd SMD Transistor dj diode smd ed 49

    2SD 4206

    Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)


    Original     		PDF MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B 2SD 4206 str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC

    TRANSISTOR SMD 613

    Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)


    Original     		PDF MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B TRANSISTOR SMD 613 TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor

    str 5707

    Abstract: 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = (any letter) Revision, see detail specification F = Active pull-down device (BiMOS only) -1 = Selected version, see detail specification


    Original     		PDF MS-001, MS-010, MS-011) MS-010) MS-018) str 5707 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703

    transistor SMD p90

    Abstract: transistor 431 smd T1G6001528-Q3 smd transistor 901 100A150JW500XC EAR99 RO3203 S2834 431 TRANSISTOR smd
    Text: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features


    Original     		PDF T1G6001528-Q3 T1G6001528-Q3 transistor SMD p90 transistor 431 smd smd transistor 901 100A150JW500XC EAR99 RO3203 S2834 431 TRANSISTOR smd

    smd transistor marking j1

    Abstract: smd C105
    Text: Application Note 1703 ISL8502AEVAL1Z: 2A Synchronous Buck Regulator with Integrated MOSFETs The ISL8502A is a synchronous buck controller with internal MOSFETs packaged in a small 4mmx4mm QFN package. The ISL8502A can support a continuous load of 2A and has a very


    Original     		PDF ISL8502AEVAL1Z: ISL8502A AN1703 ISL8502AEVAL1Z smd transistor marking j1 smd C105

    transistor w 431

    Abstract: transistor 431 smd TIC 122 Transistor transistor SE 431 w 431 transistor transistor je 123 6 pin TRANSISTOR SMD CODE tm transistor+431+smd
    Text: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features


    Original     		PDF T1G6001528-Q3 T1G6001528-Q3 transistor w 431 transistor 431 smd TIC 122 Transistor transistor SE 431 w 431 transistor transistor je 123 6 pin TRANSISTOR SMD CODE tm transistor+431+smd

    DARLINGTON TRANSISTOR ARRAY

    Abstract: No abstract text available
    Text: EVERLIGHT. THE SOURCE OF LIGHT. EVERLIGHT illuminates the way for many of the world’s brightest companies. Acclaimed as a premiere global solution provider in the opto-semiconductor industry and held in high regard as a reliable partner for many of the world’s leading electronics companies,


    Original     		PDF

    PCE3667CT-ND

    Abstract: capacitor 56J pF a 69154 CLF1G0060-30 SOT1227A 200V470
    Text: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 1 — 8 October 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.


    Original     		PDF CLF1G0060-30; CLF1G0060S-30 CLF1G0060-30 CLF1G0060S-30 1G0060S-30 PCE3667CT-ND capacitor 56J pF a 69154 SOT1227A 200V470

    SOT1227A

    Abstract: No abstract text available
    Text: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 4 — 20 June 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.


    Original     		PDF CLF1G0060-30; CLF1G0060S-30 CLF1G0060-30 CLF1G0060S-30 1G0060S-30 SOT1227A

    Untitled

    Abstract: No abstract text available
    Text: CLF1G0060-10; CLF1G0060S-10 Broadband RF power GaN HEMT Rev. 3 — 30 May 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.


    Original     		PDF CLF1G0060-10; CLF1G0060S-10 CLF1G0060-10 CLF1G0060S-10 1G0060S-10

    Untitled

    Abstract: No abstract text available
    Text: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.


    Original     		PDF CLF1G0060-30; CLF1G0060S-30 CLF1G0060-30 CLF1G0060S-30 1G0060S-30

    sot1227

    Abstract: 082279 SOT1227A Model 284J 226J
    Text: CLF1G0060-10; CLF1G0060S-10 Broadband RF power GaN HEMT Rev. 1 — 8 October 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.


    Original     		PDF CLF1G0060-10; CLF1G0060S-10 CLF1G0060-10 CLF1G0060S-10 1G0060S-10 sot1227 082279 SOT1227A Model 284J 226J

    6 Pin LED PIRANHA

    Abstract: everlight 50-215 smd transistor 2T EHP-A09K-BRTT-5670HEAFAD9K-1T8-AM PLR262 19-237A/R6GHBHC-B01/2T IRM-3638M-X
    Text: CATALOGUE 2014-2015 OPTOELECTRONIC COMPONENTS www.everlight.com EVERLIGHT THE SOURCE OF LIGHT EVERLIGHT illuminates the way for many of the world’s brightest companies. Acclaimed as a premiere global solution provider in the opto-semiconductor industry and held in high regard as a reliable


    Original     		PDF D-85737 SE-573 6 Pin LED PIRANHA everlight 50-215 smd transistor 2T EHP-A09K-BRTT-5670HEAFAD9K-1T8-AM PLR262 19-237A/R6GHBHC-B01/2T IRM-3638M-X

    4622-x50

    Abstract: 103CBT ST7580 4622X503 smd transistor 6g t60404 SMD transistor code c70 STM32F103CBT UM1005 smd led 5060
    Text: UM1005 User manual STEVAL-IHP002V1: PLM smartplug demonstration board Introduction This demonstration board is a smartplug based on the STM32F10x microcontroller, ST7540 PLM, and STPM01 energy metering ICs. The board is a node of a PLM network which allows the final user to monitor and manage the plugged load energy consumption.


    Original     		PDF UM1005 STEVAL-IHP002V1: STM32F10x ST7540 STPM01 4622-x50 103CBT ST7580 4622X503 smd transistor 6g t60404 SMD transistor code c70 STM32F103CBT UM1005 smd led 5060

    Untitled

    Abstract: No abstract text available
    Text: ZXCT1032EV1 USER GUIDE Figure 1 Evaluation board components' layout DESCRIPTION The ZXCT1032EV1 provides a very convenient means for evaluating the capabilities of the ZXCT1032 current monitor. The ZXCT1032 is a high-side current monitor that drives a PMOS or PNP transistor to provide in-rush


    Original     		PDF ZXCT1032EV1 ZXCT1032 ZXCT1032lanstraà D-81541 A1103-04,

    transistor SMD Z2

    Abstract: transistor 6 pin SMD Z2 Electrolytic Capacitors smd 470uF/50V Transistor z1 smd 470uf/50V SMD SMD Transistor z2 ZXLD1321 NMC0603X7R103K50TRPF mosfet 4850 zener 13v smd
    Text: A Product Line of Diodes Incorporated DN93 Wide input voltage range SEPIC LED driver using ZXLD1321 with external power switch Ray Liu, Applications Engineer, Diodes Incorporated Introduction Some LED lighting applications like the solar and automotive system, require an LED driver with


    Original     		PDF ZXLD1321 an541 transistor SMD Z2 transistor 6 pin SMD Z2 Electrolytic Capacitors smd 470uF/50V Transistor z1 smd 470uf/50V SMD SMD Transistor z2 ZXLD1321 NMC0603X7R103K50TRPF mosfet 4850 zener 13v smd

    TCD2703ADG

    Abstract: transistor BC 945 THS119 CIPS218CF601 CIPS308BS621 TCD2704DG TCD2955 tcd2704dg-1 tcd2705 TPS606
    Text: Sensors/Image Pickup Devices Photo Sensors z 274 Image Sensors z 280 Magnetic Sensors z 283 273 Photo Sensors Infrared LEDs and Visible LEDs for Sensor Application Electrical/Optical Characteristics Ta = 25°C Part Number Radiant intensity (mW/sr) Features


    Original     		PDF TLN108 TLN201 TLN102 TLN105B TLN110 THS117 THS118 THS119 THS121 THS122 TCD2703ADG transistor BC 945 THS119 CIPS218CF601 CIPS308BS621 TCD2704DG TCD2955 tcd2704dg-1 tcd2705 TPS606

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    ,mosfet power converter smd 4800

    Abstract: 18-A PTV05020 PTV05020W PTV05020WAH SR-332 T520 TRANSISTOR SMD catalog
    Text: PTV05020W www.ti.com SLTS232 – JANUARY 2005 18-A, 5-V INPUT NONISOLATED WIDE-OUTPUT ADJUST SIP MODULE FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • • Up to 18-A Output Current 5-V Input Bus Wide-Output Voltage Adjust


    Original     		PDF PTV05020W SLTS232 EN60950 ,mosfet power converter smd 4800 18-A PTV05020 PTV05020W PTV05020WAH SR-332 T520 TRANSISTOR SMD catalog

    toshiba smd marking code transistor

    Abstract: transistor SMD making code GC injection molding machine wire diagram TLR121 5252 F 1002 GE miniature Lamp data book toshiba smd diode a5 catalogue automatic lamp LED wavelength 440 smd toshiba smd marking
    Text: LED Lamps APPLICATION GUIDE 1. What are LED Lamps? LED APPLICATION Guide 1-1 LED Chip Types Materials and Structure LEDs are compound semiconductor devices. Their optical wavelength depends on the elements and the ratio between them. An LED's luminescence is based on the recombination of the minority carriers (holes and electrons) in a PN junction.


    Original     		PDF