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    OMRON Corporation E2F-X10E1-1 0.055M

    Proximity Sensors E2F-X10E1 W/ SPECIAL ATTRIBUTE
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    Mouser Electronics E2F-X10E1-1 0.055M
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    0.05 OM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: VNP20N07FI VNB20N07/VNV20N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS on I lim VNP20N07FI VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN


    Original     		VNP20N07FI VNB20N07/VNV20N07 VNB20N07 VNV20N07 ISOWATT220 VNP20N07FI, VNV20N07 VNV20N0713TR PDF

    VNB20N07

    Abstract: VNP20N07FI VNV20N07
    Text: VNP20N07FI VNB20N07/VNV20N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS on I lim VNP20N07FI VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN


    Original     		VNP20N07FI VNB20N07/VNV20N07 VNB20N07 VNV20N07 VNP20N07FI, VNB20N07 VNP20N07FI VNV20N07 PDF

    Untitled

    Abstract: No abstract text available
    Text: VNP20N07FI VNB20N07/VNV20N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS on I lim VNP20N07FI VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN


    Original     		VNP20N07FI VNB20N07/VNV20N07 VNB20N07 VNV20N07 VNP20N07FI, VNB20N07 DocID1644 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120 to 400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


    Original     		2SA2154MFV 2SC6026MFV PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1112MFV,RN1113MFV 0.32 ± 0.05 0.80 ± 0.05 1 1 0.4 0.4 0.8 ± 0.05 Incorporating a bias resistor into the transistor reduces the number of


    Original     		RN1112MFV RN1113MFV PDF

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


    Original     		2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1107MFV~RN1109MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1107MFV,RN1108MFV,RN1109MFV 1.2 ± 0.05 0.22 ± 0.05 1 1 0.4 0.4 0.8 ± 0.05 Incorporating a bias resistor into the transistor reduces the number of


    Original     		RN1107MFV RN1109MFV RN1108MFV RN2107MFV RN2109MFV PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1110MFV,RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1110MFV,RN1111MFV Unit: mm 1.2 ± 0.05 0.22 ± 0.05 1 1 0.4 0.4 0.8 ± 0.05 Incorporating a bias resistor into the transistor reduces the number of parts, so


    Original     		RN1110MFV RN1111MFV RN2110MFV RN2111MFV PDF

    VNB20N07

    Abstract: VNP20N07FI VNV20N07
    Text: VNP20N07FI VNB20N07/VNV20N07  ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS on I lim VNP20N07FI VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION


    Original     		VNP20N07FI VNB20N07/VNV20N07 VNB20N07 VNV20N07 VNP20N07FI, VNB20N07 VNP20N07FI VNV20N07 PDF

    VNB20N07

    Abstract: VNP20N07FI VNV20N07
    Text: VNP20N07FI VNB20N07/VNV20N07  ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS on I lim VNP20N07FI VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION


    Original     		VNP20N07FI VNB20N07/VNV20N07 VNB20N07 VNV20N07 VNP20N07FI, VNB20N07 VNP20N07FI VNV20N07 PDF

    VNB20N07

    Abstract: VNP20N07FI VNV20N07
    Text: VNP20N07FI VNB20N07/VNV20N07 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V cl amp R DS on I l im VNP20N07F I VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION


    Original     		VNP20N07FI VNB20N07/VNV20N07 VNP20N07F VNB20N07 VNV20N07 VNP20N07FI, VNB20N07 VNP20N07FI VNV20N07 PDF

    OMNIFET

    Abstract: VNB20N07 VNP20N07FI VNV20N07
    Text: VNP20N07FI VNB20N07/VNV20N07 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V cl amp R DS on I l im VNP20N07F I VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION


    Original     		VNP20N07FI VNB20N07/VNV20N07 VNP20N07F VNB20N07 VNV20N07 VNP20N07FI, VNB20N07 OMNIFET VNP20N07FI VNV20N07 PDF

    mosfet current limiter

    Abstract: VNP10N07 equivalent VNP35N07 10A17 analog switch circuit using mosfet ncl 071 overvoltage protection circuit vnd7n04 VNV35N07 VNB20N07
    Text: VNP20N07FI VNB20N07/VNV20N07 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V cl amp R DS on I l im VNP20N07F I VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION


    Original     		VNP20N07FI VNB20N07/VNV20N07 VNP20N07F VNB20N07 VNV20N07 VNP20N07FI, VNB20N07 mosfet current limiter VNP10N07 equivalent VNP35N07 10A17 analog switch circuit using mosfet ncl 071 overvoltage protection circuit vnd7n04 VNV35N07 PDF

    RN1101MFV

    Abstract: RN1106MFV RN2101MFV RN2102MFV RN2103MFV RN2104MFV RN2105MFV RN2106MFV
    Text: RN2101MFV~RN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2101MFV,RN2102MFV,RN2103MFV RN2104MFV,RN2105MFV,RN2106MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 0.32 ± 0.05


    Original     		RN2101MFVRN2106MFV RN2101MFV RN2102MFV RN2103MFV RN2104MFV RN2105MFV RN2106MFV RN1101MFV RN1106MFV RN2101MFV RN1106MFV RN2103MFV RN2106MFV PDF

    Untitled

    Abstract: No abstract text available
    Text: RN2101MFV~RN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2101MFV,RN2102MFV,RN2103MFV RN2104MFV,RN2105MFV,RN2106MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 0.32 ± 0.05


    Original     		RN2101MFVâ RN2106MFV RN2101MFV RN2102MFV RN2103MFV RN2104MFV RN2105MFV RN1101MFV RN1106MFV PDF

    RN1110MFV

    Abstract: RN1111MFV RN2110MFV RN2111MFV
    Text: RN1110MFV,RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110MFV,RN1111MFV Unit: mm z A wide range of resistor values is available for use in various circuits. z Complementary to the RN2110MFV~RN2111MFV 0.32 ± 0.05 0.80 ± 0.05 0.4


    Original     		RN1110MFV RN1111MFV RN2110MFV RN2111MFV RN1111MFV RN2111MFV PDF

    M913

    Abstract: No abstract text available
    Text: fwgm jG j T 1I0M Ü 0H ^ T # RfflO ^@i[Li©Trii ilDei VNP20N07FI VNB20N07/VNV20N07 "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNP20N07FI VNB20N07 VNV20N07 Vclamp RD6<on llbn 70 V 70 V 70 V 0.05 a 0.05 n 0.05 a 20 A 20 A 20 A • . . . . . LINEAR CURRENT LIMITATION


    OCR Scan     		VNP20N07FI VNB20N07/VNV20N07 VNB20N07 VNV20N07 VNP20N07FI, VNV20N07 1996SGS-THOMSON M913 PDF

    RGI74A

    Abstract: No abstract text available
    Text: ENG. NO SOA-73100-0248 22.00 REF. 0 .8 6 6 9.0 (0.354) 0' 2.56*0.05 (0 . 101) JL NO. A 3.86*0.05 (0.152) A® 3.12*0.05 (0.123) < F È f I WL L- > 6.50 (0.256) SI000257.DGN EDP f A FERRULE 1.70*0.05 A (0.067) SIMILAR ITEM 50 OHM SMB ASSEMBLY NO. S1000248.DGN


    OCR Scan     		SOA-73100-0248 SI000257 S1000248 SDA-73 RGI74A, RGI74A PDF

    Untitled

    Abstract: No abstract text available
    Text: VNP20N07FI VNB20N07/VNV20N07 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R D S o n I lim VNP20N07FI VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Q. 0.05 a 0.05 n 20 A 20 A 20 A . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION


    OCR Scan     		VNP20N07FI VNB20N07/VNV20N07 VNB20N07 VNV20N07 VNP20N07FI, VNB20N07 NB20N07-VNV20N07 PowerSO-10 PDF

    LQFP128

    Abstract: CI -dp904c
    Text: 2‘o+om + 0.055 0.145 - 0.045 0 . 10 + 0.05 LQFP128-P-1818-0.50 Unit : mm


    OCR Scan     		LQFP128-P-1818-0 LQFP128 CI -dp904c PDF

    SD-47308-001

    Abstract: No abstract text available
    Text: 10 1.20 5.08*0.05 4 ±0.05 id bi- cTbi— icTbr 1.20 I -e 1.20 *0.05 10X 12.8 2.00 E3 - 0 .9 0 ±0.05 (10X) 15.30 i.55*o.20 1.20 ±0.05 5 ±0.05 2.35*0.20 jcljsi— 3.95*0.05 t|_ p i— i q j i B -15.20- e — 16.20 -17.10 — E ffl 1.65 ±0.05


    OCR Scan     		PS-27308-001. SD-47308-001 SD-47308-001 PDF

    Untitled

    Abstract: No abstract text available
    Text: GENNUM C O R P O R A T I OM GX214A Monolithic 4x1 Video Multiplexer DATA SHEET FEATURES CIRCUIT DESCRIPTION • low cost • differential gain at 3.58 MHz, 0.05% max. • differential phase at 3.58 MHz, 0.05 deg. max. • off-isoiation better than 90 dB at 10 MHz


    OCR Scan     		GX214A GX214AS GX214Arepresentsafully 1990Gennum 3T357Ã PDF

    awm 20624

    Abstract: C4488 UL20706 UL 20624 20624 UL20624 awm20624 AWM 3 pin awm 20706 20706
    Text: Note: UL Style : AWM 80624 607 BOt AIM 20706 60V 105t *RoHS C om pliant S2 S1 TYPE S3 Code PITCH FC5 1 -xx 1 C 4 4 8 8 * xxmm Pitch Flexible 0.5 Super Flexible 1.0 Flexible 1.25 Flexible 2.54 Low Flexible CW 0.3 0.6 0.8 1.27 CT 0.035 0.05 0.05 0.08 Series •


    OCR Scan     		FC5XF0Q001 C4488 awm 20624 UL20706 UL 20624 20624 UL20624 awm20624 AWM 3 pin awm 20706 20706 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.474+ 0 .005 [3 7.44+ 0 .13]- 0 .7 3 7 + 0 .0 0 2 " [18.72+0.05] 0 0 0 2.5 1+ 0.05] < |> 2X 00.1 0 0 [02.54] J X SIZE 16 BI-SPRING CONTACT 0 .1 9 7 + 0 .0 0 2 §EE DETAIL A [5.00+0.05] TYP. MTACT HOLE PATTERN NOTES: 1. MATERIALS AND FINISHES: INSULATOR: GLASS FILLED POLYESTER. UL 9 4 V - 0 , COLOR BLUE.


    OCR Scan     		3K6370 PDF