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    0.15 UM PHEMT TRANSISTOR Search Results

    0.15 UM PHEMT TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    0.15 UM PHEMT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    pseudomorphic HEMT

    Abstract: fpd7612general FPD7612 MIL-HDBK-263 AlGaAs resistivity
    Text: FPD7612 FPD7612General Purpose pHEMT GENERAL PURPOSE pHEMT Package Style: Bare Die Product Description Features The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed


    Original     		FPD7612 FPD7612General FPD7612 25mx200m 12GHz 18GHz 22-A114. MIL-STD-1686 MIL-HDBK-263. pseudomorphic HEMT MIL-HDBK-263 AlGaAs resistivity PDF

    hittite j

    Abstract: Hydrogen GaAs 0.15 pHEMT mmic j PHILADELPHIA
    Text: v00.0105 APPLICATION NOTES HYDROGEN EFFECTS ON GaAs pHEMT DEVICES Introduction: The effects of residual Hydrogen H2 on GaAs pHEMT devices in hermetically sealed packages are well documented by the GaAs MMIC community. This application note is intended to serve as an overview of this


    Original     		PDF

    GaAs 0.15 um pHEMT

    Abstract: mhemt 0.15 um pHEMT transistor 0.15 phemt
    Text: Kathy Wood 3/23/2007 ESD Sensitivity of TriQuint Texas Processes and Circuit Components GaAs semiconductor devices have a high sensitivity to Electrostatic Discharge ESD and care must be taken to prevent damage. This document provides typical Human Body Model (HBM)


    Original     		diffe10 GaAs 0.15 um pHEMT mhemt 0.15 um pHEMT transistor 0.15 phemt PDF

    Quality System

    Abstract: GaN Amplifiers Wireless Amplifiers Hybrid Modules mwtinc GM-141526-H4
    Text: MMIC Amplifiers ƒƒHigh Performance/Quality MMIC Based on InGaP HBT, pHEMT, and Linear MESFET Technologies ƒƒHigh Linearity, Fully Matched WiMax Power Amplifiers ƒƒMilitary Screening Available on Hermetically Sealed Package Products ƒƒLow Cost Commercial Products


    Original     		PDF

    ap910401

    Abstract: mmic code h5 MWT-PH15 WPS44 MMA-054025-Q3 MWT-10 mps080817nxx 445122 MGA-242740-02 MMA-343737-Q10
    Text: New Products in 2010 New Linear GaN Amplifiers • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at 4.4 to 4.9 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical • Flexible Customization for other Frequency Bands using Hybrid Technology


    Original     		MGA-444940-02 ap910401 mmic code h5 MWT-PH15 WPS44 MMA-054025-Q3 MWT-10 mps080817nxx 445122 MGA-242740-02 MMA-343737-Q10 PDF

    C-Band Power GaAs FET HEMT Chips

    Abstract: CMC 707 7 transistor solid state x-band s-parameter transistor RF TRANSISTOR 1.5 GHZ dual gate microwave fet IC MMIC X-band amplifier HEMT MMIC POWER AMPLIFIER Three MMIC Solution for an X-band RF Front End multilayer lithography ic fabrication GaAs FET HEMT Chips
    Text: KU-BAND MMIC POWER AMPLIFIERS DEVELOPED USING MSAG MESFET TECHNOLOGY T his article presents the design approach and test results of 1, 1.5, 2 and 5 W, Kuband MMIC power amplifiers developed using the high performance MSAG MESFET technology. Both single-ended and


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    FPD750DFN

    Abstract: FPD750SOT89 MIL-HDBK-263
    Text: FPD750DFN LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT • PERFORMANCE 1850 MHz ♦ 24 dBm Output Power (P1dB) ♦ 20 dB Small-Signal Gain (SSG) ♦ 0.3 dB Noise Figure at 25% Bias ♦ 39 dBm Output IP3 at 50% Bias ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available


    Original     		FPD750DFN FPD750DFN FPD750SOT89 MIL-HDBK-263 PDF

    4G base station power amplifier

    Abstract: lna 2.5 GHZ s parameter ads design FR4 dielectric constant 4.6 matching with smith chart common base amplifier circuit designing GaAs 0.15 pHEMT VT-47 Simulation of 3 phase common mode choke
    Text: WHITE PAPER Ultra-Low Noise Figure, High Gain Amplifier with High Linearity Introduction Infrastructure receiver applications for cellular/3G, ISM, GPS, WiMAX/4G, automotive applications, and satellite radio require Low-Noise Amplifiers LNAs with very low Noise Figures (NF),


    Original     		01087A 4G base station power amplifier lna 2.5 GHZ s parameter ads design FR4 dielectric constant 4.6 matching with smith chart common base amplifier circuit designing GaAs 0.15 pHEMT VT-47 Simulation of 3 phase common mode choke PDF

    fet amplifier schematic

    Abstract: high end amplifier schematics TL74 of 3842 c cor hybrid amplifier modules MITSUBISHI Microwave TL71 high power fet amplifier schematic TL78 mitsubishi gaAs 1998
    Text: Design and Performance of a 1.6-2.2 GHz Low-Noise, High Gain Dual Amplifier in GaAs E-pHEMT White Paper Abstract — The design and realization of a dual lownoise amplifier LNA module in the 2 GHz band suitable for balanced receiver front-end application


    Original     		XC1900E-03 AV01-0258EN fet amplifier schematic high end amplifier schematics TL74 of 3842 c cor hybrid amplifier modules MITSUBISHI Microwave TL71 high power fet amplifier schematic TL78 mitsubishi gaAs 1998 PDF

    db3 c018

    Abstract: w21 transistor transistor c018 VMMK-1225 tl74 250R07C3R3BV4T L046 VMMK1225 25x14mm TL65
    Text: VMMK-1225 Wafer Scale Packaged Enhancement Mode PHEMT FET 3.5GHz LNA Suitable for WiMAX Applications Application Note 5377 Introduction Application This article describes a practical low noise amplifier LNA for the Mobile WimAX 3.4 to 3.8GHz bands. The VMMK1225 device from Avago Technologies may be used in a


    Original     		VMMK-1225 VMMK1225 VMMK-1225 Tee12 50mil AV02-1053EN SRL19 db3 c018 w21 transistor transistor c018 tl74 250R07C3R3BV4T L046 25x14mm TL65 PDF

    SZA-6044

    Abstract: GaAs 0.15 pHEMT
    Text: SZA-6044 5.1GHzto5.9 GHz ¼Watt Power Amplifier with Active Bias SZA-6044 Preliminary 5.1GHzto5.9GHz ¼WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor


    Original     		SZA-6044 SZA-6044 EDS-103535 SZA-6044" SZA6044 GaAs 0.15 pHEMT PDF

    FPD1500

    Abstract: FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263 TL11 TL12 TL13 transistor w10 18 transistor w10 Transistor W35
    Text: FPD1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT • PERFORMANCE 1850 MHz ♦ 27.5 dBm Output Power (P1dB) ♦ 17 dB Small-Signal Gain (SSG) ♦ 1.2 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


    Original     		FPD1500SOT89 FPD1500SOT89E FPD1500SOT89 EB1500SOT89AA 120mA. Revised11/11/05 FPD1500 FPD1500SOT89E MIL-HDBK-263 TL11 TL12 TL13 transistor w10 18 transistor w10 Transistor W35 PDF

    ku-band pll lnb

    Abstract: MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package
    Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)


    Original     		11a/b/g AV00-0061EN AV00-0116EN ku-band pll lnb MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package PDF

    TDMA simulation ADS

    Abstract: ATF-50189 BTS 3900 a C7-15PF ATF0189 ATF050189 ATF-501P8 ATF-54143 GSM900 msu 305
    Text: ATF-50189 High Linearity 900 MHz Amplifier Avago Technologies Enhancement Mode Psuedomorphic HEMT in SOT 89 Package Application Note 5293 Introduction Application Guidlines Avago Technologies ATF-50189 is an enhancement mode PHEMT designed for high linearity and medium


    Original     		ATF-50189 800MHz 900MHz 2400MHz 900MHz AV01-0365EN TDMA simulation ADS BTS 3900 a C7-15PF ATF0189 ATF050189 ATF-501P8 ATF-54143 GSM900 msu 305 PDF

    Prospects for a BiCFET III-V HBT Process

    Abstract: kopin
    Text: Prospects for a BiCFET III-V HBT Process Peter J Zampardi, Mike Sun, Cristian Cismaru, and Jiang Li Abstract—While complementary FETs are routinely available in BiCMOS processes, the successful integration of HBTs with complementary FETs has not been reported. In this work, we


    Original     		40-Gbit/s-class Prospects for a BiCFET III-V HBT Process kopin PDF

    VCO-102

    Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
    Text: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high


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    MICROWAVE ASSOCIATES ISOLATOR

    Abstract: AS218 transistor
    Text: Semiconductor Discretes for RF-Microwave Applications Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high-performance analog and mixed-signal semiconductors enabling mobile connectivity. The company’s power amplifiers, front-end modules and


    Original     		CAT501-09A MICROWAVE ASSOCIATES ISOLATOR AS218 transistor PDF

    full bridge igbt induction heating generator

    Abstract: transistor x112 WESTCODE catalog 100-12E8 2-IAO-QMC-01001 IGBT ac switch in SSR IGBT D-Series IGCT 4.5kv ixys vuo 52 input id MITA15WB1200TMH
    Text: P R O D U C T S E L E C T O R G U I D E IGBT & Rectifier Modules M A Y 2 0 0 7 Selector Guide incl.: Product Overview Tables Application Overview Technology Overview MiniPack 2 NEW Press-Pack IGBTs POWER DEVICES Power MOSFET Discreets RF Power MOSFETs IGBT Discreets


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    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


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    ATF-36077-STR

    Abstract: 5965-8726E
    Text: Thal H E W L E T T mLEm P A C K A R D 2 -1 8 GHz Ultra Low N oise Pseudomorphic HEMT Technical Data ATF-36077 Features Description • PHEMT T echnology • Ultra-Low N o ise Figure: Hewlett-Packard’s ATF-36077 is an ultra-low-noise Pseudomorphic High Electron Mobility Transistor


    OCR Scan     		ATF-36077 ATF-36077 5962-0193E 5965-8726E 44475A4 001772b ATF-36077-STR 5965-8726E PDF

    Transistor TT 2246

    Abstract: No abstract text available
    Text: W hp% m LUM H E W L E TT PA CKA RD 1 .5 -1 8 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low M inim um N oise Figure: I dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • A sso ciated Gain: 9.4 dB Typical at 12 GHz


    OCR Scan     		ATF-36163 OT-363 5964-4069E 5965-4747E Transistor TT 2246 PDF

    SN 74 868

    Abstract: HEMT marking P Z0502
    Text: What mLliM HEWLETT* PACKARD 1.5-18 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features • Low M inim um N oise Figure: I dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • A ssociated Gain: 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz


    OCR Scan     		ATF-36163 SN 74 868 HEMT marking P Z0502 PDF

    5964-4069E

    Abstract: saa 1094 ATF pHEMT MARKING VD9 saa 1059 SAA 1251 saa 1074 SAA 1085
    Text: Who I HEW LETT 1 "rim P A C K A R D 1.5-18 GHz Surface Mount Pseudomorpltic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low M inim um N oise F igure: I dB Typical at 12 GHz 0.6 dB Typical a t 4 GHz • A ssociated G ain: 9.4 dB Typical at 12 GHz


    OCR Scan     		ATF-36163 OT-363 Oj004 a079t0j0Q2 5964-4069E 4747E 5964-4069E saa 1094 ATF pHEMT MARKING VD9 saa 1059 SAA 1251 saa 1074 SAA 1085 PDF

    MGA72543

    Abstract: No abstract text available
    Text: What HEWLETT 1 "KM PACK ARD PHEMT* Low Noise Amplifier with Bypass Switch Technical Data MGA-72543 Features • O perating Frequ en cy 0.1 GHz ~ 6.0 GHz Surface Mount Package SOT-343 SC-70 • N oise Figure: 1.4 dB at 2 GHz • Gain: 14 dB at 2 GHz • B ypass S w itch on Chip


    OCR Scan     		MGA-72543 OT-343 SC-70) MGA72543 PDF