Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    0.5W ,GAAS FET Search Results

    SF Impression Pixel

    0.5W ,GAAS FET Price and Stock

    Microchip Technology Inc TN2640K4-G

    N-Channel Enhancement-Mode Vertical DMOS FET - 400V Vdss - 500mA (Id) @ 25°C - 5Ohm @ 500mA, 10V Rds On (Max) @ Id, Vgs - TO-252 - Lead (Pb)-free.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TN2640K4-G 3,750
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.41
    • 10000 $1.31
    		Buy Now

    Microchip Technology Inc TN0106N3-G

    Small Signal Field-Effect Transistor - 0.35A I(D) - 60V - 1-Element - N-Channel - Silicon - Metal-oxide Semiconductor FET - TO-92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TN0106N3-G 2,724
    • 1 -
    • 10 -
    • 100 $0.939
    • 1000 $0.784
    • 10000 $0.773
    		Buy Now

    Microchip Technology Inc VN0106N3-G

    Small Signal Field-Effect Transistor - 0.35A I(D) - 60V - 1-Element - N-Channel - Silicon - Metal-oxide Semiconductor FET - TO-92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com VN0106N3-G 2,000
    • 1 -
    • 10 -
    • 100 $0.626
    • 1000 $0.4824
    • 10000 $0.4694
    		Buy Now

    Microchip Technology Inc TP2435N8-G

    P-Channel Enhancement-Mode Vertical DMOS FET - -350V - 15 ohm - 3-lead SOT-89 - Tape&Reel - RoHS compliant
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TP2435N8-G 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.349
    • 10000 $1.329
    		Buy Now

    Microchip Technology Inc TN2540N3

    N-Channel Enhancement-Mode Vertical DMOS FET - 400V Vdss - 175mA (Id) @ 25°C - 12Ohm @ 500mA, 10V Rds On (Max) @ Id, Vgs - TO-92-3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TN2540N3 11
    • 1 $0.686
    • 10 $0.686
    • 100 $0.556
    • 1000 $0.556
    • 10000 $0.556
    		Buy Now
    Find more 0.5W ,GAAS FET price and stock on Findchips.com

    0.5W ,GAAS FET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    pHEMT 6GHz

    Abstract: TC3947 tc1401n
    Text: TC3947 REV2_20080516 0.5W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES • 0.5W Typical Output Power at 6GHz • 12dB Typical Linear Power Gain at 6GHz • High Linearity: IP3 = 37 dBm Typical at 6GHz • High Power Added Efficiency: Nominal PAE of 35% at 6GHz


    Original     		TC3947 TC3947 TC1401N pHEMT 6GHz PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATASHEET 0.5W X, Ku-BAND POWER GaAs FET FEATURES_ OUTLINE DIMENSIONS NE960R575 Units in mm • CLASSA OPERATION PACKAGE OUTLINE 75 • HIGH OUTPUT POWER • HIGH RELIABILITY DESCRIPTION_ The NE950R575 Power GaAs FET covers the 4 GHz to 18


    OCR Scan     		NE960R575 NE950R575 PDF

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0918A L & S BAND / 0.5W SMD non - matched DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm


    Original     		MGF0918A MGF0918A 27dBm 150mA 50pcs) PDF

    mitsubishi 7805

    Abstract: MGF0918A
    Text: < High-power GaAs FET small signal gain stage > MGF0918A L & S BAND / 0.5W SMD non - matched DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm


    Original     		MGF0918A MGF0918A 27dBm 150mA 50pcs) mitsubishi 7805 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 0.5W X, Ku-BAND POWER GaAs FET FEATURES_ OUTLINE DIMENSIONS NE960R575 Units in mm • C LASS A O PERATION PACKAGE OUTLINE 75 • HIGH O U T P U T POW ER • HIGH RELIA B ILITY DESCRIPTION_ The NE950R575 Power GaAs FET covers the 4 GHz to 18


    OCR Scan     		NE960R575 NE950R575 NE950RS75 PDF

    NE960R575

    Abstract: 0512f NE950R575
    Text: 0.5W X, Ku-BAND POWER GaAs FET FEATURES NE960R575 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 27.5 dBm TYP @ P1 dB PACKAGE OUTLINE 75 • HIGH LINEAR GAIN: 9.0 dB TYP @ 14.5 GHz • HIGH EFFICIENCY: 30% TYP @ 14.5 GHz +0.15 -0.05 2 PLACES φ 1.8


    Original     		NE960R575 NE950R575 24-Hour NE960R575 0512f PDF

    NE950R575

    Abstract: No abstract text available
    Text: 0.5W X, Ku-BAND POWER GaAs FET FEATURES NE960R575 OUTLINE DIMENSIONS Units in mm • CLASS A OPERATION PACKAGE OUTLINE 75 • HIGH OUTPUT POWER • HIGH RELIABILITY +0.15 -0.05 2 PLACES φ 1.8 GATE 0.5 ± 0.1 SOURCE 2.7 2.3 3.0 MIN BOTH LEADS DRAIN 2.7 TYP


    Original     		NE960R575 NE950R575 24-Hour PDF

    Untitled

    Abstract: No abstract text available
    Text: RO-P-DS-3076 Preliminary Information MAAPGM0040 11.0-15.0 GHz 0.5W Power Amplifier MAAPGM0040 Features ♦ 0.5 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ GaAs MSAG Process APGM0040 YWWLLLL Primary Applications ♦ Point-to-Point Radio


    Original     		RO-P-DS-3076 MAAPGM0040 APGM0040 MAAPGM0040 100pF PDF

    sot-23 12w

    Abstract: 12w sot-23 AF002C4
    Text: GaAs MMIC Control FET Series in SOT 23 DC-2.5 GHz 0 A lpha AF002C1-39, AF002C4-39 Features • Low Cost SOT 23 Package ■ Series or Shunt Configuration ■ Low DC Current Drain ■ Ideal Switch Building Blocks ■ Pin Diode Replacements ■ High Power Antenna Switches


    OCR Scan     		AF002C1-39, AF002C4-39 AF002C1-39 0/-12V sot-23 12w 12w sot-23 AF002C4 PDF

    GHz Power FET

    Abstract: No abstract text available
    Text: GaAs MMIC SP2T FET Non-Reflective Switch With Driver 20 MHz-2 GHz 0 Alpha AE002M2-29 Features • Non-Reflective All Ports ■ Low Current Consumption < 20 ^A ■ Two Line Control ■ 1/2 Watt 1dB Compression Point ■ Single +5V, Bias Supply ■ Fast Amplitude and Phase Settling Times


    OCR Scan     		AE002M2-29 MIL-H-38534 AE002M2-29 GHz Power FET PDF

    GHz Power FET

    Abstract: No abstract text available
    Text: GaAs MMIC FET SPDT Switch EQAI^IìÉi in MS0P8 Package DC-2.5 GHz AS104-59 Features • Ultra Miniature Surface Mount Package ■ Footprint is 50% of SOIC 8 ■ Low Insertion Loss ■ Low Power Consumption ■ High Intercept Point Description This GaAs MMIC SPDT reflective switch is in an ultra


    OCR Scan     		AS104-59 MA01801 GHz Power FET PDF

    AK802M2-12

    Abstract: No abstract text available
    Text: GaAs MMIC SPDT FET Switch With Integral Driver Non-Reflective DC-2.5 GHz EüAlpha AK802M2-12 Features • Plastic 8 Lead SOIC ■ Low DC Power Consumption -20 mW per Arm ■ High IP3 +43 dBm @ 800 MHz ■ Non Reflective ■ Integral Driver -5.6 Volt Bias Supplies; CMOS


    OCR Scan     		AK802M2-12 AK802M2-12 PDF

    fast fet MHz

    Abstract: GHz Power FET
    Text: GaAs M MIC SP4T FET Non-Refledi ve Switch With Driver 20 MHz-2 GHz HQAlpha AE002M4-05 Features • Non-Reflective All Ports ■ Low Current Consumption < 20 ¡¿A ■ Two Line Control ■ 1/2 Watt 1dB Compression Point ■ Single +5V, Bias Supply - <1 ttl


    OCR Scan     		AE002M4-05 MIL-H-38534 AE002M4-05 fast fet MHz GHz Power FET PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC SPST FET Switch iSAIphi Non-Reflective DC-6 GHz AS006M1-01, AS006M1-10, AS004M1-08, AS004M1-11 Features • Broadband DC-6 GHz ■ Available in Gull Wing 7 and 8 Lead Surface Mount Packages ■ High Isolation ■ 3 Nanosec Rise/Fall Time ■ Low D.C. Power Consumption


    OCR Scan     		AS006M1-01, AS006M1-10, AS004M1-08, AS004M1-11 AS006M MIL-STD-883 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC SPST FET Switch Non-Reflective DC-6 GHz E£A$g|« AS006M1-01, AS006M1-10, AS004M1-08, AS004M1-11 Features • Broadband DC-6 GHz ■ Available in Gull Wing 7 and 8 Lead Surface Mount Packages ■ High Isolation ■ 3 Nanosec Rise/Fall Time ■ Low D.C. Power Consumption


    OCR Scan     		AS006M1-01, AS006M1-10, AS004M1-08, AS004M1-11 MIL-STD-883 MA01801 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC FET Transfer Switch DC-4 GHz AD004T2-00, AD004T2-11 Features • Broad Bandwidth ■ Low DC Power Dissipation < 20 uA ■ Low Differential Phase Between Paths ■ Meets M IL -S T D -883 Screening Requirements ■ Chip Size 30 x 39 x 8 Mils AD004T2-11


    OCR Scan     		AD004T2-00, AD004T2-11 AD004T2-00 004T2-00 004T2-11 MA01801 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC SPST FET Switch Non-Reflective DC-6 GHz A S 0 06 M 1-0 1, A S 0 0 6 M 1-10, AS004M 1-08, AS004M 1-11 Features • Broadband DC-6 GHz ■ Available in Gull Wing 7 and 8 Lead Surface Mount Packages ■ High Isolation ■ 3 Nanosec Rise/Fall Time ■ Low D.C. Power Consumption


    OCR Scan     		AS004M AS004M1-11 AS006M1-10 MIL-STD-883 AS006M1-01, AS006M1-10, AS004M1-08, PDF

    AD004T2-00

    Abstract: AD004T2-11 2w, GaAs FET
    Text: GaAs MMIC FET Transfer Switch DC-4 GHz AD004T2-00, AD004T2-11 Features Broad Bandwidth Low DC Power Dissipation < 20 ¡xA AD004T2-11 Low Differential Phase Between Paths Meets M IL-S TD -883 Screening Requirements J2 Chip Size 30 x 39 x 8 Mils J3 Description


    OCR Scan     		AD004T2-00, AD004T2-11 MIL-STD-883 30x39x8 AD004T2-00 AD004T2-11 G0G2543 2w, GaAs FET PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC SP2T FET Non–Reflective Switch With Driver 20 MHz–2 GHz AE002M2–29 Features Non–Reflective All Ports Low Current Consumption < 20 µA Two Line Control 1/2 Watt 1dB Compression Point Single +5V, Bias Supply J1 Fast Amplitude and Phase Settling Times


    Original     		AE002M2â PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC SPDT FET Switch With Integral Driver Non-Reflective DC-2.5 GHz EBAlph AK802M2-12 Features • Plastic 8 Lead SOIC ■ Low DC Power Consumption ~20 mW per Arm ■ High IP3 +43 dBm @ 800 MHz ■ Non Reflective ■ Integral Driver -5.6 Volt Bias Supplies; CMOS


    OCR Scan     		AK802M2-12 AK006L1-01 AS004M2-11 AT002N5-00 AK006L1-10 AS004R2-08 AT002N5-01 AK006M1-00 AS004R2-11 AT002N5-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC SPDT FET Switch With Integral Driver Reflective DC-6 GHz AK006R2-01, AK006R2-10, AK004R2-11 Features Integral Driver +5V, -5V ; CMOS & TTL Compatible AK004R2-11 AK006R2-01 Low DC Power Consumption -2 0 mw Per Arm Reflective Open Meets M IL -S T D -883 Screening Requirements


    OCR Scan     		AK006R2-01, AK006R2-10, AK004R2-11 AK006R2-01 AK006R2-10 DSASH43 GQ02G35 PDF

    AK002M2-12

    Abstract: No abstract text available
    Text: GaAs MMIC SPDT FET Switch With Integral Driver Non-Reflective DC-2.5 GHz AK002M2-12 Features • Plastic 8 Lead SOIC ■ Low DC Power Consumption -2 0 mW Per Arm ■ Non Reflective ■ Integral Driver +5V, -5 V Bias Supplies; CMOS and TTL Compatible Description


    OCR Scan     		AK002M2-12 AK002M2-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC FET Transfer Switch DC-4 GHz AD004T2-00, AD004T2-11 Features Broad Bandwidth Low DC Power Dissipation < 20 ^A Low Differential Phase Between Paths Meets M IL -S T D -88 3 Screening Requirements J2 Chip Size 30 x 39 x 8 Mils J3 Description The A D 004T2-00 is a GaAs 4 Port FET switch


    OCR Scan     		AD004T2-00, AD004T2-11 004T2-00 AK006L1-01 AS004M2-11 AT002N5-00 AK006L1-10 AS004R2-08 AT002N5-01 AK006M1-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs MIUIIC SPST FET Switch Low Loss Reflective DC-6 GHz EEQAIph AS006L1-01, AS006L1-10, AS004L1-08, AS004L1-11 Features • Broadband DC-6 GHz ■ Available in Gull Wing 7 and 8 Lead Surface Mount Packages ■ Reflective ■ Low Loss ■ 3 ns Rise/Fall Time


    OCR Scan     		AS006L1-01, AS006L1-10, AS004L1-08, AS004L1-11 MIL-STD-883 AS004L1â AS006L1-10 slighT002D8-31 AK006L1-01 AS004M2-11 PDF