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    0.65MM Search Results

    0.65MM Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    10118309-015LF Amphenol Communications Solutions Assembly, Top Mount, Short Body 65mm, S/D(68Pins), R/A, 3.3V, 1.5mm s/o, non-Eject, Low Cost Version, HF version Visit Amphenol Communications Solutions
    LM4865MMX/NOPB Texas Instruments 750mW Audio Power Amplifier with DC Volume Control and Headphone Switch 8-VSSOP -40 to 85 Visit Texas Instruments Buy
    LM4865MM/NOPB Texas Instruments 750mW Audio Power Amplifier with DC Volume Control and Headphone Switch 8-VSSOP -40 to 85 Visit Texas Instruments Buy
    SF Impression Pixel

    0.65MM Price and Stock

    Blue Robotics WLP-M10-6.5MM-LC

    CABLE GLAND 6.2-6.8MM M10
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    DigiKey WLP-M10-6.5MM-LC 1
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    TE Connectivity SCT-NO.2-E5-0-65MM

    HEATSHRINK TUBING .355" 4:1 BLK
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    DigiKey SCT-NO.2-E5-0-65MM Bulk 4,000
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    Newark SCT-NO.2-E5-0-65MM Bulk 4,000
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    Interstate Connecting Components SCT-NO.2-E5-0-65MM
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    Master Electronics SCT-NO.2-E5-0-65MM
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    Sager SCT-NO.2-E5-0-65MM 4,000
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    TE Connectivity SCT-NO.4-E2-0-65MM

    HEATSHRINK TUBING .700" 4:1 BLK
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    DigiKey SCT-NO.4-E2-0-65MM Bulk 5,000
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    Newark SCT-NO.4-E2-0-65MM Bulk 1,000
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    SCT-NO.4-E2-0-65MM Bulk 5,000
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    Interstate Connecting Components SCT-NO.4-E2-0-65MM
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    Sager SCT-NO.4-E2-0-65MM 5,000
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    TE Connectivity SCT-NO.3-E3-0-65MM

    HEATSHRINK TUBING .455" 4:1 BLK
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    DigiKey SCT-NO.3-E3-0-65MM Bulk 2,500
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    Newark SCT-NO.3-E3-0-65MM Bulk 2,500
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    Interstate Connecting Components SCT-NO.3-E3-0-65MM
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    Master Electronics SCT-NO.3-E3-0-65MM
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    Sager SCT-NO.3-E3-0-65MM 2,500
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    TE Connectivity HFT5000-40-20-0-65MM

    HFT5000-40/20-0-65MM
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    DigiKey HFT5000-40-20-0-65MM Box 2,000
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    0.65MM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    EXC14CE900U

    Abstract: EXC14CE900 EXC14CG EXC14 EXC-14C
    Text: Common mode Noise Filters Common mode Noise Filters Type: EXC14CG EXC14CE • Features ■ Recommended Applications ● Small size and low-profile (L 0.85mm҂W 0.65mm҂H 0.45mm) ● Filtering the noise of high-speed differential signaling lines and minimizing deformations of transmitted signal


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    EXC14CG EXC14CE 85mmW 65mmH EXC14CE900U 667-EXC-14CE900U EXC-14CE900U EXC14CE900U EXC14CE900 EXC14 EXC-14C PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612SYKQWDF ATTENTION Super Bright Yellow White OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z 1.6mmx1.25mm SMT LED, 0.65mm thickness. The Super Bright Yellow device is made with AlGaInP on


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    APTB1612SYKQWDF 2000pcs DSAL1007 AUG/19/2010 604-APTB1612SYKQWDF PDF

    APH1608YC

    Abstract: No abstract text available
    Text: 1.6X0.8mm SMD CHIP LED LAMP Part Number: APH1608YC Description Features z1.6mmX0.8mm SMT LED, 0.65mm THICKNESS. zLOW POWER CONSUMPTION. zWIDE VIEWING ANGLE. zIDEAL The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light


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    APH1608YC 2000PCS APR/30/2007 DSAA9887 APH1608YC PDF

    APTB1612SURKQBDC-F01

    Abstract: No abstract text available
    Text: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612SURKQBDC-F01 Hyper Red Blue ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z1.6mmx1.25mm SMT LED, 0.65mm thickness. The Hyper Red source color devices are made with AlGaInP


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    APTB1612SURKQBDC-F01 2000pcs MAR/24/2009 DSAH3787 APTB1612SURKQBDC-F01 PDF

    CL21B333KBANNNC

    Abstract: No abstract text available
    Text: Multi Layer Ceramic Capacitor MLCC 1. Model : CL21B333KBANNNC 2. Description Part no. Size (inch(mm) Thickness (mm) Temperature charateristics Capacitance value(uF) Capacitance tolerance(%) Voltage (V) CL21B333KBANNNC 0805/2012 0.65mm X7R 33nF ± 10 % 50


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    CL21B333KBANNNC E4294A, 100MHz 25Vdc) PDF

    jedec package MO-220 vggc

    Abstract: MO-220
    Text: Package Outline 16-Lead QFN Package Outline K6 4.00x4.00mm body, 1.00mm height (max), 0.65mm pitch D2 D 16 Note 1 (Index Area D/2 x E/2) 16 1 1 e Note 1 (Index Area D/2 x E/2) E E2 b View B Top View Bottom View Note 3 θ L A A3 Seating Plane A1 L1 Note 2


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    16-Lead DSPD-16QFNK64X4P065 B101008 jedec package MO-220 vggc MO-220 PDF

    ultra low igss pA

    Abstract: CSD23201W10
    Text: P-Channel CICLON NexFET Power MOSFETs CSD23201W10 Product Summary Features • Ultra Low Qg & Qgd D  Small Footprint D VDS -12 V Qg 1.8 nC Qgd  Low Profile 0.65mm height G  Pb Free S RDS on  Gate ESD Protection – 3kV nC 110 m VGS=-2.5V


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    CSD23201W10 ultra low igss pA CSD23201W10 PDF

    red green bi-color LED super bright

    Abstract: APTB1612ESGC-F01
    Text: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612ESGC-F01 High Efficiency Red Super Bright Green Features Description z 1.6mmx1.25mm SMT LED, 0.65mm thickness. The High Efficiency Red source color devices are made with z Bi-color,low power consumption.


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    APTB1612ESGC-F01 2000pcs Tolera011 DSAF1097 APR/19/2011 red green bi-color LED super bright APTB1612ESGC-F01 PDF

    APTB1612

    Abstract: APTB1612SURKCGKC-F01
    Text: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612SURKCGKC-F01 Hyper Red Green Description Features z 1.6mmx1.25mm SMT LED, 0.65mm THICKNESS. z BI-COLOR,LOW POWER CONSUMPTION. z WIDE VIEWING ANGLE. The Hyper Red source color devices are made with DH


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    APTB1612SURKCGKC-F01 2000PCS APR/29/2007 DSAH3786 APTB1612 APTB1612SURKCGKC-F01 PDF

    Untitled

    Abstract: No abstract text available
    Text: CERAMIC SMD ULTRA MINIATURE CONTOUR MODE QUARTZ CRYSTAL ABM8L Pb RoHS Compliant 3.2 x 2.5 x 0.65mm | | | | | | | | | | | | | | | FEATURES: APPLICATIONS: • Low frequencies in a Low height and Ultra Miniature Package • Ceramic package and metal lid assures high reliability


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    PDF

    APTB1612SURKSGC-F01

    Abstract: No abstract text available
    Text: 1.6x1.25mm BI-COLOR SMD CHIP LED LAMP APTB1612SURKSGC-F01 HYPER RED SUPER BRIGHT GREEN Description Features 1.6mmx1.25mm SMT LED, 0.65mm THICKNESS. The Hyper Red source color devices are made with DH BI-COLOR,LOW POWER CONSUMPTION. InGaAlP on GaAs substrate Light Emitting Diode.


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    APTB1612SURKSGC-F01 2000PCS DSAF1099 MAR/19/2005 APTB1612SURKSGC-F01 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS SINGLE INVERTER GATE DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 0.65mm pitch PSOP package Extended commercial range o f - 4 0 ° C to + 8 5 °C Vcc = 3.3V ± 0.3V, Normal Range


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    MIL-STD-883, 200pF, ALVC1GU04 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS SINGLE INVERTER GATE WITH 5 VOLT TOLERANT I/O J m ï ï ., D E S C R IP TIO N : FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 0.65mm pitch PSOP package Extended commercial range of - 40°C to +85°C


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    MIL-STD-883, 200pF, LVC1GU04A: LVC1GU04A IDT74ALVC1G04. 2975StenderWay PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS HEX INVERTER WITH OPEN-DRAIN OUT­ PUTS, 5 VOLT TOLERANT I/O DESCRIPTION: FEATURES: - IDT74LVC05A ADVANCE INFORMATION 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 1,27mm pitch SOIC, 0.65mm pitch SSOP and


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    IDT74LVC05A MIL-STD-883, 200pF, LVC05A PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS HEX INVERTER WITH 5 VOLTTOLERANT I/O FEATURES: - DESCRIPTION: 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 1,27mm pitch SOIC, 0.65mm pitch SSOP and 0.65mm pitch TSSOP packages


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    MIL-STD-883, 200pF, LVC04A IDT74LVC04A PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-NAND GATE, 5 VOLT TOLERANT I/O DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 1,27mm pitch SOIC, 0.65mm pitch SSOP and 0.65mm pitch TSSOP packages


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    MIL-STD-883, 200pF, LVC00A IDT74LVC00A S014-2) S014-3) PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT74LVCU04A ADVANCE INFORMATION 3.3V CMOS HEX INVERTER WITH 5 VOLT TOLERANT I/O FE A T U R E S : - 0.5 MICRON CMOS Technology - ESD > 2000V per MlL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 - 1,27mm pitch SOIC, 0.65mm pitch SSOP and


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    IDT74LVCU04A MlL-STD-883, 200pF, LVCU04A: LVCU04A PDF

    Untitled

    Abstract: No abstract text available
    Text: _ irr R i D E S C R IP T IO N : FEATURES: This quadruple 2-input positive-AND gate is built using advanced - 0.5 MICRON CMOS Technology - ESD > 2000V per MIL-STD-883, Method 3015; - > 200V using machine model C = 200pF, R = 0 1,27mm pitch SOIC, 0.65mm pitch S S O P and


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    MIL-STD-883, 200pF, ALVC08 IDT74ALVC08 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS 3-LINE TO 8-LINE DECODER/DEMULTIPLEXER, WITH ADDRESS LATCHES FEATURES: - 0.5 MICRON CMOS Technology - ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 - 1,27mm pitch SOIC, 0.635mm pitch QSOP, 0.65mm pitch SSOP, 0.65mm pitch TSSOP packages


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    MIL-STD-883, 200pF, 635mm LVC137A: PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS OCTAL TRANSPARENT D-TYPE LATCH WITH 3-STATE OUTPUTS, 5 VOLT TOLERANT I/O, BUS-HOLD DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 1,27mm pitch SOIC, 0.65mm pitch SSOP,


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    MIL-STD-883, 200pF, 635mm LVCH373A IDT74LVCH373A PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS SINGLE 2-INPUT POSITIVE-AND GATE WITH 5 VOLT TOLERANT I/O DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 0.65mm pitch PSOP package Extended commercial range of - 4 0 ° C to +85°C


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    MIL-STD-883, 200pF, LVC1G08A IDT74LVC1G79A. IDT74ALVC1G04. PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS AND BUS-HOLD FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 1,27mm pitch SOIC, 0.65mm pitch SSOP, 0.635mm pitch QSOP, 0.65mm pitch TSSOP packages


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    MIL-STD-883, 200pF, 635mm LVCH244A: 2975StenderW PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS SINGLE POSITIVE-EDGETRIGGERED D-TYPE FLIP-FLOP FE A T U R E S : - D E S C R IP T IO N : 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 0.65mm pitch P SO P package Extended commercial range of - 40° C to + 85° C


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    MIL-STD-883, 200pF, ALVC1G79: IDT74ALVC1G79 ALVC1G79 IDT74ALVC1G04. PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS IDT74ALVC126 ADVANCE INFORMATION DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 - 1,27mm pitch SOIC, 0.65mm pitch SSOP and


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    IDT74ALVC126 MIL-STD-883, 200pF, ALVC126: PDF