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    TURCK Inc RI-16S10C-4A10000-H1181

    |Turck RI-16S10C-4A10000-H1181
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    Newark RI-16S10C-4A10000-H1181 Bulk 1
    • 1 $728.8
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    Dynapar HA52510000H11

    Encoder, Shafted, Incremental, Optical, NEMA12,IP54, FLG,3/8SFT,5P M12,5-26V, OPCOL | Dynapar HA52510000H11
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS HA52510000H11 Bulk 12 Weeks 1
    • 1 $842.3
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    0000H11 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PR ELIM IN ARY AM D il Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optim ized for m em ory card applications ■ — Backwards-com patible with the Am 29F016C ■ 5.0 V ± 10%, single power supply operation


    OCR Scan     		Am29F017B 29F016C 29F017B AM29F017B PDF

    Untitled

    Abstract: No abstract text available
    Text: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125°C


    OCR Scan     		Am29F016B 20-year 29F016 44-pin PDF

    AN1122

    Abstract: M29W116BB M29W116BT F8000h-1
    Text: M29W116BT M29W116BB 16 Mbit 2Mb x8, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70ns ■ PROGRAMMING TIME - 1 0 |j s by Byte typical ■ 35 MEMORY BLOCKS


    OCR Scan     		M29W116BT M29W116BB M29W116BT, AN1122 M29W116BB F8000h-1 PDF

    AM29F017B

    Abstract: No abstract text available
    Text: PR ELIM IN ARY AM D il Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optim ized for m em ory card applications ■ — Backwards-com patible with the Am 29F016C ■ 5.0 V ± 10%, single power supply operation


    OCR Scan     		Am29F017B 29F016C 29F017B PDF

    AM29F016B

    Abstract: No abstract text available
    Text: PR ELIM IN ARY AMDZ1 Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Typical 1,000,000 w rite/erase cycles (minimum 100,000 cycles guaranteed)


    OCR Scan     		Am29F016B 48-pin 40-pin 29F016 44-pin 16-038-S044-2 AM29F016B 29F016B PDF

    Untitled

    Abstract: No abstract text available
    Text: M59DR032A M59DR032B 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory PR ELIM IN A R Y DATA • SUPPLY VOLTAGE - V dd = V ddq = 1.65V to 2.2V: for Program, Erase and Read - Vpp = 12V: optional Supply Voltage for fast Program and Erase ■ ASYNCHRONOUS PAGE MODE READ


    OCR Scan     		M59DR032A M59DR032B 100ns TSOP48 FBGA48 FBGA48 M59DR032A, PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY AMDZ1 Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program/erase cycles per sector guaranteed ■ Package options


    OCR Scan     		Am29F016B 48-pin 40-pin Am29F016 44-pin twHwi-12- PDF

    Untitled

    Abstract: No abstract text available
    Text: PR ELIM IN ARY A M D ii Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optim ized for m em ory card applications ■ — Backwards-com patible with the Am 29F016C ■ 5.0 V ± 10%, single power supply operation


    OCR Scan     		Am29F017B 29F016C 29F017B PDF