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    0000SE3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: r C i : : ~ &L 61C SEMICONDUCTOR bî V l ' V i U t j ^ U UT-äiJ gQSïiSl^fëSilffiSÊ !? ®@L?g3. eOBBSPEOB g®BMie@6ieai9e€ p ®@Pß9. e©Bïfti’gil „ de _ n a ^ t a □ o a o 2 t . cï | T - ff- o'? 1Ng2 i A 1N823Ä 1N825A 1N827A . 1N829A TEMPERATURE COMPENSATED


    OCR Scan     		PDF 1N823Ã 1N825A 1N827A 1N829A 1N821A CBR25Ser/es CBR30 0000SE3 O-105 O-106

    Untitled

    Abstract: No abstract text available
    Text: 17077W-, ,xAL SEMICONDUCTOR aäpst ? E P i ce n tra l Setwigeitglisgtor Corp. C e n tra l S e m ico n d u cto r C orp . c e n tra l se m ic o n d u c to r C o rp . 145 Adams Avenue Hauppauge, New York 11788 DE S C R I P T I O N T h e C E N T R A L S E M I C O N D U C T O R CRSH1 Series types are Schottky B a rrier R e ctifiers m o u n t e d in an


    OCR Scan     		PDF 7077W-, CBR10Series, CBR25Ser/es CBR12 CBR30 0000SE3 O-105 O-106

    2N22A

    Abstract: 2N4271 2N3947 2N3326 2N3666
    Text: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T 'lZ - ö ! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. V cb VCE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419


    OCR Scan     		PDF 2n3302 to-18 2n3326 2n3388 2n3418 2n3419 n3420 2n3421 CBR30 0000S23 2N22A 2N4271 2N3947 2N3666

    2N3563

    Abstract: 2N5133 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 2N5088
    Text: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. X a Vcb V CE V EB hFE at •c V CE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15


    OCR Scan     		PDF D0D0S15 2N5088 2N5127 O-106 2N5131 2N5133 2N5209 2N5210 2N3563 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133

    CR508

    Abstract: No abstract text available
    Text: 1989963 CENTRAL S E M I C O N D U C T O R ; GGSS vdts V R (volts) V R (RMS)<V0,ls) 61C O Q I S ^ ’T ' C / ' C J EM S 3.0-6.0 Amperes V rrm ' General Purpose Silicon Power Rectifier CR3005 CR3010 CR3020 CR3040 CR3060 CR3080 CR3100 CR3120 CR5005 CR5010


    OCR Scan     		PDF CR3005 CR5005 CR6005 CR3010 CR5010 CR6010 CR3020 CR5020 CR6020 CR3040 CR508

    Untitled

    Abstract: No abstract text available
    Text: 1989963 CENTRÀL SEMICONDUCTOR ' ' SKftWl nflTTLB 61C "00249 7 ^ 3 5 ^ 7 3 □ 0 D D 5 4 ‘ì S J " *• 'ï 3 if, '*ïf< j&-Lfv-r s*—.je MJ12010 eeratpcil g@Biie@iigl5jet©r c e r p . Central s e m i c o n d u c t o r eopp. JP NPN SILICON TRANSISTOR


    OCR Scan     		PDF 0DD54` MJ12010 MJ12010 CBR10 CBR25Ser/es CBR12 CBR30 0000SE3 O-105 O-106

    Untitled

    Abstract: No abstract text available
    Text: i A 12 Amperes General Purpose Silicon Power Rectifier kl VRRM<volts) ODGDlSb T iT | • CENTRAL S E M I C O N D U C T O R ^ »e | OQDOISL T | CR12I005 CR12I010 CR12I020 CR12I040 CR12I- 50 100 200 400 060 CR12I080 CR12I100 CR12I120 600 800 1000 1200 .060 (1.52) MIN DIA


    OCR Scan     		PDF CR12I005 CR12I010 CR12I020 CR12I040 CR12I060 CR12I080 CR12I100 CR12I120 CR12I CBR10

    2N4121

    Abstract: 2N5139 2N4917 2N3639 2N4122 2n5138 016 2N4062 2N5383 2N5857 2N5138
    Text: CENTRAL SEMICONDUCTOR = tï 1989963 CENTRAL SEMICONDUCTOR * 1 DE | . JT.„. DDDDS13 b 61C 00213 - //-°/ PNP EPOXY - SW ITCHING A N D G ENER AL PURPOSE (Cont'd. V cb V CE V eb hFE at •c VCE V V V min max mA V V 2N4060 2N4061 2N40622N4121 2N4122 30 30


    OCR Scan     		PDF DDDDS13 2N4060 2N4061 2N4062- 2N4121 O-106 2N4122 O-106. 2N4125 2N4126 2N5139 2N4917 2N3639 2n5138 016 2N4062 2N5383 2N5857 2N5138

    CR3U-005

    Abstract: No abstract text available
    Text: l?g?63 CENTRAL' SEMICONDUCTOR ~ >1 61C 00172 T - 0 3 -1 5 DE l D0DD17g 7 | c e n t r e il CR3U seBisieonsiMetoF e@rp. Central seiüieaitäyctor Corp. central Semiconductor Corp. SERIES ULTRA FAST RECOVERY RECTIFIER CASE 103 145 Adams Avenue Hauppauge, New York 11788


    OCR Scan     		PDF CR3U-005 CR3U-Q10 CR3U-Q15 CR3U-Q20 CBR30 0000S23 O-105 O-106

    CR150-080

    Abstract: CBR-12
    Text: CENTRAL SEMIC ONDUCTOR tí d~ 1 □ □ □ o is i E i 3 - 2 ffi5 i £ a e a s e 150 Amperes 4 . ^ L General Purpose Silicon Power Rectifier hi de | nanta 4 | ooddist o V RRM (volts) Vr (volts) V R (RMS)(volts) CR1 50- CR150- CR150- CR150- CR150- CR150-


    OCR Scan     		PDF CR150010 CR150020 CR150040 CR150060 CR150080 CR150100 CR150120 3/8-24UNF-2A CBR10 CBR25Ser/es CR150-080 CBR-12

    2N295

    Abstract: 2N2891 2N223
    Text: central se hi co nd u ct or bi D F | n a n t . 3 o o o o s it, 1 9 8 9 9 6 3 CENTRAL SEMICC3NDUCTOFr ' " _ 6 IC 00 216 NPNM ETALCA N -SW ITC H IN G AND GENERAL PURPOSE Cont'd. i — 21 h CDb MHz pF 8 8 8 8 8 < o 00 at VCE V V 2N2219 2N2219A 2N2220 2N2221


    OCR Scan     		PDF 2N2219 2N2219A 2N2220 2N2221 2N2221A 2N2222 2N2222A 2N2236 2N2237 2N2243 2N295 2N2891 2N223

    Untitled

    Abstract: No abstract text available
    Text: 1989963 CENTRAL SEMICONDUCTOR t.1 3E &ê39 61C "00270 7W/-// DE I n ö T T b a 0D0DS7D 7 r 1N935B 1N936B 1N937B 1N93ÔB 1N939B @b C auîtral SsHaBeemaiDctoB* e©G’p. s central semiconductor Corp. TEMPERATURE COMPENSATED ZENER DIODE 145 Adams Avenue


    OCR Scan     		PDF 1N935B 1N936B 1N937B 1N939B 1N935B CBR10Series, CBR25Ser/es CBR12 CBR30 0000SE3

    MJ12005

    Abstract: CBR30
    Text: 61C 00248 •/ f - 1 3 - / 3 1989 963 CENTRAL ’SEMICONDUCTOR 0000E4Ö SlìtE3 ! °1 §@g3B9@@närae&@? 3 MJ12005 S e s r iic e & is iis e f ® ! ? c e r g » C e n tra l Z> NPN SILICON TRANSISTOR sattilc^iidssetor Corp. Central semiconductor Corp.


    OCR Scan     		PDF MJ12005 CBR30 0000S23 O-105 O-106

    T-75 DIODE

    Abstract: Germanium DO-35 DIODE Germanium Power Diodes diodes ir 5
    Text: I [ »."¿'ix fOÔ Ï9 0 1 9 Ô 9 9 6 3 " t ËM 'tR Â C ^SËMlCQKlOÜd^Ofe DE J j ^emisonductor e@rp. Central Central 2 |~ J ? CDSH-L SERI ES *1 semiconductor DESCRIPTION ODDOSTO SILICON LOW CURRENT SCHOTTKY BARRIER DIODE JEDEC DO-35 CASE corn. The CENTRAL SEMICONDUCTOR


    OCR Scan     		PDF 19S996-3 DO-35 CBR30 0000S23 O-105 O-106 T-75 DIODE Germanium DO-35 DIODE Germanium Power Diodes diodes ir 5

    T-75 High voltage diode

    Abstract: T-75 DIODE BAY72
    Text: 1989963 61C 00288V ^ Q Î - ô î CËNTKALySgWXCONmjÇt O ^ til DE € rp. central semgconilucfor Corp. central sem iconductor Corp. Central sem iconductor Corp. ♦ I 1 4 5 Adams Avenue Hauppauge, New York 1 1 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR BAY72 is a general purpose Silicon Diode designed for fast


    OCR Scan     		PDF DO-35 BAY72 CBR30 0000S23 O-105 O-106 T-75 High voltage diode T-75 DIODE

    MPSU45 REPLACEMENT

    Abstract: MPSU06 equivalent Motorola MPSU45 mpsu07 equivalent MPSU45 mpsu95 equivalent MPSU10 equivalent mps-u56 equivalent MPSU51 equivalent MPS-U05
    Text: 1 CENTRAL SEMICONDUCTOR b l DE | n tm b B □DDDS40 T ~Ö Z - |T Central's CEÜ-U o I Ideal second source for Motorola’s MPS-U series power transistors Exact electrical equivalent in JE D E C TO-202 case._ • Superior power dissipation p D t A = 25 °C 1.75 W atts vs. 1.0 W att Motorola


    OCR Scan     		PDF DDDS40 O-202 MPS-U01 CEN-U01 MPS-U51 CEN-U51 MPS-U01A CEN-U01A MPS-U51A CEN-U51A MPSU45 REPLACEMENT MPSU06 equivalent Motorola MPSU45 mpsu07 equivalent MPSU45 mpsu95 equivalent MPSU10 equivalent mps-u56 equivalent MPSU51 equivalent MPS-U05

    MPSW45 equivalent

    Abstract: transistor case To 105 CENW45 MPSW45
    Text: 1989963 'CENTRAL "SEMICONPUCTOR S@giîie fiÆ eÊ@r ®©rp. g a m i semiconductor cored. central semiconductor e@rp. central semiconductor Corp. 1 4 5 Adams Avenue Hauppauge, N ew York 1 1 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR CENW45 Series Is a Silicon NPN Epitaxial Planar Darlington


    OCR Scan     		PDF CENW45 MPSW45 CBR30 0000S23 O-105 O-106 MPSW45 equivalent transistor case To 105

    3N246

    Abstract: 3N247 3N248 3N249 3N250 3N251 3N252 3N253 3N254 3N259
    Text: CENTRAL SEMICONDUCTOR ea r tòra! nimta oDDoiaa i ' g ESlB8@Kä et@P €@ffgL 3N246&#39; ï HRU 3N252 e®Mte^S s@SBSie@ßi^iߣt@r eopgs. 3N253 THRU 3N259 Central S@i?il€@iì£iU£tor Corp. Central Semiconductor Corp. SILICON BRIDGE RECTIFIERS CASE B 1 4 5 Adams Avenue


    OCR Scan     		PDF 3N246' 3N252 3N253 3N259 3N246, 3N246 3N247 3N248 3N249 3N250 3N251 3N254

    Untitled

    Abstract: No abstract text available
    Text: 1989963 CENTRAL SEM C O N D U C T O R _ 6 1 C 0 0 2 3 0 - r - 2 9 ' 3 1 ti graf&Gsfl gSfiîB6e©Bi^5SÊ@P @@51-3. de I n t m b B • 00DDE3D b GES6014 GES6016 C@BS€?CSl g©DlliS@HÖö£tOP Corp. Central sem iconductor Corp. NPN SILICON TRANSISTOR


    OCR Scan     		PDF 00DDE3D GES6014 GES6016 GES6014, GES6016 GES6015, GES6017 CBR10Series, CBR25Ser/es

    1N523

    Abstract: No abstract text available
    Text: 19 B9963 CENTRAL SEMICONDUCTOR h i g BEÊPai g^a&ESQBBSSOISÊ !? @ ® F g D e J iV ö ^T]] QDOOETT 3 |~~ 1135518, A, B, C, D §@waie©iitäiyG£oF w Csntral m m THRU m central semiconductor Corp. 3> 1N55U6, A, B, C, D g©&sii£@siefüeter C©rp. «»¿•fry


    OCR Scan     		PDF B9963 1N55U6, 1N5518 CBR25Ser/es CBR30 0000SE3 O-105 O-106 1N523

    Untitled

    Abstract: No abstract text available
    Text: DESCRIPTION The CENTRAL SEMICONDUCTOR 1N914A,B types are very high speed Silicon Switching Diodes designed for computer and general purpose applications. MAXIMUM RATINGS TA=25°C Peak Repetitive Reverse Voltage Peak Working Reverse Voltage Average Forward Current


    OCR Scan     		PDF 1N914A 100mA 100fi CBR10 CBR25Ser/es CBR12 CBR30 0000SE3 O-105 O-106

    Untitled

    Abstract: No abstract text available
    Text: DESCRIPTION T h e C E N T R A L S E M I C O N D U C T O R CR3F Series types are Axial Lead Silicon Recti f i e r s desi g n e d for DC Power S u p p l y and Inverter a p p l i c a t i o n s w h e r e fast recovery times are needed. M A X I M U M RATI N G S


    OCR Scan     		PDF CR3F060 CR3F080 CR3F100 CR3F120 CBR10 CBR25 CBR12 CBR30 0000SE3 O-105

    Untitled

    Abstract: No abstract text available
    Text: • 1969963 CENTRAL' SEM IC ON D UC TO R 61C 00175 S^ttJÏHB £Ç5BB«a»l9SEafc r Vb&SBTgäi. £ 0 ü M g s m i£ @ s ifis ie t f C o r p . Central sesniecmeiiBetor Corp. central semiconductor Corp. 145 Adams Avenue Hauppauge, New York 1 1 7 8 8 DESCRIPTION


    OCR Scan     		PDF CBR10Series, CBR25Ser/es CBR12 CBR30 0000SE3 02DMAn O-105 O-106

    BDX53E

    Abstract: BUB06 ST BDX53C BDW23 BDW23A BDW23B BDW23C BDW24 BDW24A BDW24B
    Text: 1989963 b l de CEN TR A L I SEMICONDUCTOR oocm ns a 61C 00195'^ W~ POWER DARLINGTON TRANSISTORS EPOXY it H le = le NO. Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mhz hFE @IC Min - Max NPN PNP Amps BDW23 BDW24 : 6.0 45 50 750 - 20,000


    OCR Scan     		PDF t-33-29 T-33-33 BDW23 BDW24 BDW23A BDW24A BDW23B BDW24B BDW23C BDW24C BDX53E BUB06 ST BDX53C BDW24