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    FET MARKING QG

    Abstract: FSS208 S208
    Text: FSS208 N- Channel Silicon MOS FET DC-DC Converter TENTATIVE Features and Applications • Low ON-state resistance. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage -30 VDSS Gate to Source Voltage ±20 VGSS Drain Current DC 10 ID


    Original     		PDF FSS208 1000mm2 000107TM2fXHD FET MARKING QG FSS208 S208

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    Abstract: No abstract text available
    Text: FTS2015 N- Channel Silicon MOS FET Very High-Speed S/W Use TENTATIVE Features • Low ON-state resistance. • 2.5V drive. • Mount height 1.1mm. Absolute Maximum Ratings / Ta=25°C unit Drain to Source Voltage Gate to Source Voltage Drain Current DC Drain Current(Pulse)


    Original     		PDF FTS2015 S2016 000107TM2fXHD