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    000315B Search Results

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    000315B Price and Stock

    Boeing BACG20Z-P000315B

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    Bisco Industries BACG20Z-P000315B 100
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    IQD Frequency Products LFPTXO000315BULK

    OSCILLATOR TCXO/VCTCXO
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    Richardson RFPD LFPTXO000315BULK 1
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    000315B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1S697

    Abstract: BP107 FT2500CL FT2500CL-12 T-25
    Text: POüJEREX m INC W 05 De | T S T M b S l 000315b E R E X 3 J~~~ *T"— ^ ï T - a i FT2500CL Powerex, Inc. Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMana, France (43) 72.75.15 Phase Control SCR


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    000315b FT2500CL BP107, FT2500CL Amperes/200-1200 ail71 Avg/200-1200 1S697 BP107 FT2500CL-12 T-25 PDF

    thyristors 5000 volt 3000 amperes

    Abstract: thyristors 5000 volt 2000 amperes
    Text: POüJEREX INC m W 05 De | TSTMbSl 000315b 3 J~~~ *T"—^ ï T - a i E R E X FT2500CL Powerex, Inc. Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMana, France (43) 72.75.15 Phase Control SCR


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    000315b FT2500CL BP107, Amperes/200-1200 MAX/10 thyristors 5000 volt 3000 amperes thyristors 5000 volt 2000 amperes PDF

    BP107

    Abstract: FT2500CL FT2500CL-12 T-25
    Text: POüJEREX INC m W 05 De | TSTMbSl 000315b 3 J~~~ *T"—^ ï T - a i E R E X FT2500CL Powerex, Inc. Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMana, France (43) 72.75.15 Phase Control SCR


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    000315b FT2500CL BP107, FT2500CL Amperes/200-1200 Avg/200-1200 BP107 FT2500CL-12 T-25 PDF

    Magnetoresistance and sensor

    Abstract: DM-230
    Text: SONY CORP/COMPONENT PRODS 4RE Ö3ÖE303 D 000315b 5 DM-230 S O N Y . Magnetoresistance Element Description Package Outline Unit: mm DM-230 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is


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    000315b DM-230 DM-230 150mVp-p Magnetoresistance and sensor PDF

    As15u

    Abstract: AS15-U 15A10 las15u
    Text: SEMTECH CORP SñE D IH ñlB'ilB11! 0 0 0 3 1 5 3 1.5 AMP POSITIVE VOLTAGE REGULATORS Rfi? SET L A S 1500 ABSOLUTE MAXIMUM RATINGS PARAMETER FEATURES • Guaranteed Power Dissipation 15 Watts @ 87.5° Case • Guaranteed input-output differential: + 2.4 Volts


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    PDF

    2SK2098-01M

    Abstract: 2sk2098
    Text: 2SK2098-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET _ _ _ - FAP-III SERIES • Features • • • • • • Outline Drawings High current Low on-resistance No secondary breakdown


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    2SK2098-01M SC-67 20Ki2) 0GD3157 2sk2098 PDF

    68230

    Abstract: parallel/transistor 68230 TS68230MC 68230 A 2a23j 68000 thomson
    Text: O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX TS 68230 HMOS HIGH DENSITY N-CHANNEL SILICON-GATE PARALLEL INTERFACE / TIMER DESCRIPTION The TS 68230 parallel interface/timer Pl/T provides versati­ le double buffered parallel interfaces and a system oriented


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    GQ031SS MIL-STD-883 TS68230 MIL-STD-883 000315b 68230 parallel/transistor 68230 TS68230MC 68230 A 2a23j 68000 thomson PDF

    2SK2098-01M

    Abstract: 2sk2098
    Text: 2SK2098-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET _ _ _ - F A P - I I I • Features S E R I E S Outline Drawings • High current • Low on-resistance


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    2SK2098-01M SC-67 Q003157 2sk2098 PDF

    Untitled

    Abstract: No abstract text available
    Text: F U J I T S U M I C R O E L E C T R O N I C S 7fl D E | 3 7 ^ 7 k . a 000314ft ft | j - t f C '7 .3 ‘ 1 * Prelim inary FU JITSU M OS M em o ries M B85214-12, M B85214-15 MOS 262,144 X 8-Bit Dynamic Random Access Memory Module Description The Fujitsu MB85214 is a fully decoded, 262,144 word x 8-bit


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    000314ft B85214-12, B85214-15 MB85214 MB81256 18-pad 24-pin MB852I4-12 MB8S214-15 PDF

    Las series current regulators

    Abstract: 5 Amp Positive Adjustable Regulators 15A20 LAS15A05 LAS1515 las1505 LAS1512 LAS1524 las15u
    Text: S E M T E C H CORP SñE D IH ñlB'ilB11! 00 03 15 3 1.5 AMP POSITIVE VOLTAGE REGULATORS Rfi? SET L A S 1500 ABSOLUTE MAXIMUM RATINGS PARAMETER FEATURES • Guaranteed Power Dissipation 15 Watts @ 87.5° Case • Guaranteed input-output differential: + 2.4 Volts


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    OQ031S3 Las series current regulators 5 Amp Positive Adjustable Regulators 15A20 LAS15A05 LAS1515 las1505 LAS1512 LAS1524 las15u PDF

    V25P

    Abstract: V10P V59N V25N v24n 00D05 v29n v63n v59p
    Text: S-MOS S Y S T E M S A Seiko Epson Affiliate October 1996 240-OUTPUT TFT SOURCE DRIVER DESCRIPTION The SED1902 is a source driver IC for 64-level 256 color display TFT-LCDs. The digital data input is 6 bits by 2 pixels (where a pixel is defined as 3 dots: R, G, B). Using its 6-bit D/A converter and


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    240-OUTPUT SED1902 64-level DDD3171 V25P V10P V59N V25N v24n 00D05 v29n v63n v59p PDF

    019S

    Abstract: HDAC10180 RS-343-A SPT1018 SPT1018B TDC1018
    Text: @ SPT S P T 1 1 8 8-BIT, HIGH SPEED D/A CONVERTER SIGNAL PROCESSINO TECHNOLOGIES FEATURES APPLICATIONS • 275 MWPS Conversion Rate - Version A • 165 MWPS Conversion Rate - Version B • Compatible with TDC1018 and HDAC10180 with Improved Performance • RS-343-A Compatible


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    SPT1018 TDC1018 HDAC10180 RS-343-A SPT1018BIN 00031b4 019S SPT1018 SPT1018B PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2098-01M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ _ _ - FAP-III SERIES Outline Drawings • F e a tu re s • High current • Low on-resistance • No secondary breakdown • Low driving power


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    2SK2098-01M 000315b PDF

    52C8128

    Abstract: V52C8128
    Text: M O SEL V tT E U C V52C8128 MULTIPORT VIDEO RAM WITH 128K X 8 DRAM AND 256 X 8 SAM 70 80 10 Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns Max. CAS Access Time, (tCAC) 20 ns 25 ns 25 ns Max. Column Address Access Time, ( t ^ ) 35 ns 40 ns 50 ns Min. Fast Page Mode Cycle Time, (tPC)


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    V52C8128 52C8128 V52C8128 0D03E01 52C8128 PDF

    cs40

    Abstract: JT23
    Text: HY5117800 Series •HYUNDAI 2M x 8-bit CMOS DRAM DESCRIPTION The HY5117800 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5117800 utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


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    HY5117800 1ad08-10-m 4b75Dà D0031bà HY5117800JC HY5117800SLJC cs40 JT23 PDF

    A63 A

    Abstract: SCV64
    Text: Openbus Interface Components - Universe User Manual 2 Functional Description 2.1 Architectural Overview This section introduces the general architecture of the Universe. This description makes frequent reference to the functional block diagram provided in Figure 2.1 on page 2-2. Notice


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    313-Pin DD03341 A63 A SCV64 PDF