Untitled
Abstract: No abstract text available
Text: RF3106 Proposed • 3V CDMA US-PCS Handsets • Spread-Spectrum Systems VCC1 Si CMOS 1 2 7 GND 4 RF OUT 5 VCC2 Rev A0 000719 0.100 6.0 sq 4.390 2.500 0.600 Dimensions in mm.
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RF3106
RF3106
1850MHz
1910MHz
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Untitled
Abstract: No abstract text available
Text: 2403 260 00071 SPEAKER-1318-2.5-SC-GRAND The 13x18x2.5 mm Grand speaker provides maximum space efficiency and audio performance in small, slim consumer devices, such as mobile handsets or smartphones. The extremely flat speaker has the same space consumption compared to conventional
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SPEAKER-1318-2
13x18x2
11x15x3
750Hz)
600mW)
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Untitled
Abstract: No abstract text available
Text: SJ111859 4x 0.1 M S A CN NO. 変 更 内 容 DESCRIPTION 製 図 DR. 担 当 CHK. 査 閲 APPD. 承 認 APPD. 2 01/NOV/2011 000719 ADDED ITEM ― K.NAKATA T.NISHIMURA H.OBIKANE 3 08/AUG/2012 003622 ADDED ITEM
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08/AUG/2012
13/FEB/2013
16/DEC/2013
01/NOV/2011
SJ111859
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Untitled
Abstract: No abstract text available
Text: 9 0 9 7 2 5 0 T O S H IB A d F JiG ^E S O ~SÍ T O S H I B A { D I S C R E T E / O P T 0> ”5b"C 0 7 65 4 C D IS C R E T E /O P T O 00071=54 a ' Ü T - 3 3-0<? SILICON NPN TRIPLE DIFFUSED TYPE IN D U S T R IA L A P P L IC A T IO N S U n i t i n mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING
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7136a
Abstract: 4049 BP ICL7126* teledyne hamlin 3902 TC7136CPL ph meter circuit tc 4049 BP
Text: TELEDYNE 3bE D COMPONENTS • & ^ l 7 h 0 2 0007120 7 « T S C - t * 5 m O - o 5 WTELEDYNE COMPONENTS TC 7136 TC 7136A LOW POWER, 3-1/2 DIGIT ANALOG-TO-DIGITAL CONVERTERS FEA TUR ES T Y P IC A L A P P U C A T IO N S ■ ■ Thermometry ■ Bridge Readouts
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TC7136
TC7136A.
TC7136
TC7136A
r1983
TC7136A
7136a
4049 BP
ICL7126* teledyne
hamlin 3902
TC7136CPL
ph meter circuit
tc 4049 BP
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MA161
Abstract: umh13
Text: PANASONIC INDL/ELEK -CIO 75 69 329 52 PANA SON IC . . , >. i , . . f „ k. . _ P E I 1^35555 0007156 7 72C 07 158 IN O L «. E LE CTR ON IC ._ . . . . . . , aJ*t«.*atjfc»*W i'Ci4ifV*siat«?MS*-' LS TTL DN74LS'>U-X D DN74LS243/DN74LS243S T- DN74LS243/DN74LS243S
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Q715fi
DN74LS
DN74LS243/DN74LS243S
74LS243/DN
74LS243S
DN74LS243/SIÃ
400mVfÃ
320hing
trS15ns,
500ns,
MA161
umh13
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ECG2322
Abstract: s34 zener diode diode t48 s34 diode philips ECG2328 philips ECG2329 ECG2328 ECG2331 ECG zener diode 2 Amp zener diode
Text: PHILIPS E C G INC SHE D Transistors c o n rd j ECG Type Description and Application • bbSB^fi 000715^ S34 « E C G (Maximum Ratings at Tc = 25°C Unless Otherwise Noted Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts BV c b o BV c e o
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ECG2315
O-220
ECG2316
O-218)
ECG2317
ECG2318
O-220J
T41-1
ECG2337
ECG2322
s34 zener diode
diode t48
s34 diode
philips ECG2328
philips ECG2329
ECG2328
ECG2331
ECG zener diode
2 Amp zener diode
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Untitled
Abstract: No abstract text available
Text: TOSHIBA { DIS CR ET E/ OPT O} 9097250 TOSHIBA ~5t DÎ^jTOTTSSD 0007170 1 |"~ 5òc 07970 DISCRETE/OPTO o r - 3 a-)3 2SD1430 SILICON NPNTRIPLE DIFFUSED M ESA TYPE Unit in mm COLOR TV HORIZONTAL OUTPUT APPLICATIONS. 0 Z . 6 ± O .2 la O M A X . FEATURES: . High Voltage : V q b o =^500V
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2SD1430
2S02482
25/is
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Untitled
Abstract: No abstract text available
Text: BROOKTREE CORP b3E I m imss^s 00071Ö4 007 H B R K Interface Specification IS -910.02 PRELIMINARY B id irectio n a l C ell FIF O P a r t # U G A -9 1 0 A p ril, 1993 Brooktree Brooktree Corporation 9950 Barnes Canyon Road San Diego, CA 92121 USA 6 1 9 -4 5 2 -7 5 8 0
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IS-910
DDG716S
UGA-910
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PDF
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D0205AB
Abstract: D0-205AB
Text: 4855452 INTERNATIONAL RECTIFIER IO R in t e r n a t i o n a l 73 73C 07174 D T"-*/-2-3 Data Sheet No. PD-2.136 r e c t if ie r D E | 4 f l 5 S 4 S e 0007174 T R23D & R23DR SERIES 1400 - 800 VOLTS RANGE 315 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIODES
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R23DR
D0-205AB
R23DR12A.
4flSS455
00D717fl
D0205AB
D0-205AB
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PDF
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Untitled
Abstract: No abstract text available
Text: 3ßE 3> INTEGRATED DEVICE • 4Ö25771 0007131 1 ■ IDT ■ n- 16K x 32 CMOS STATIC RAM MODULE W & -2 .3 -IM IDT7MC4032 Integrated D evice T ech n o logy, Inc. FEATURES: DESCRIPTION: • The ID T 7 M C 4 0 3 2 is a 16K x 3 2 static RA M module with separate I/O constructed on a co-fired ceram ic substrate using
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IDT7MC4032
88-pin
MIL-STD-883,
7MC4032
dlw09
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP SSE D 7 ^ 7 0 7 ^ 0007107 T -3 2SC4519 1 5 - I S . # 2018A N P N Epitaxial P la n a r S ilic o n T ran sis to r High-Speed Switching Applications 3133 Features . Adoption of FBET process • Low collector-to-emitter saturation voltage
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2SC4519
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TR3 Marking
Abstract: KSR1101 KSR2101
Text: SAMSUNG SEMICONDUCTOR INC 14E D J 7*^41*12 0007111 £ KSR2101 PNP EPITAXIAL SILICO N TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SO T -2 3 • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=4.7Kfl, R,=4.7K!)
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KSR2101
KSR1101
OT-23
T-31-13
TR3 Marking
KSR1101
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PDF
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KSR1112
Abstract: KSR2112
Text: SAMSUNG SEMICONDUCTOR INC KSR2112 14E D J 7^4:142 0007135 f l j PNP EPITAXIAL SILICON TRANSÌSTOR T - 3 7 - IB SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching Circuit, inverter, Interface circuit Driver circuit • Biiilt in bias Resistor (R-47KQ)
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KSR2112
R-47KQ)
KSR1112
OT-23
Collector--23
100fiA,
KSR1112
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KSR1211
Abstract: KSR2211
Text: SA M S U N G SE MIC OND UC TOR INC IME O 1 0007155. *ì | KSR2211 PNP EPITAXIAL SIU C O N TRANSISTOR SW ITCHING APPLICATION Bias Resistor Built In T - 37- |3 • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R = 22 Kfl)
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KSR2211
22Kfl)
KSR1211
O-92S
-10mA,
KSR1211
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PDF
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2N6515
Abstract: 2N6516
Text: SAMSUNG SEMICONDUCTOR INC 2N6516 14E D | 7^4142 00071^ 1 | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 HIGH VOLTAGE TRANSISOTR • Collector-Emitter Voltage: Vcto=300V * Collector Dlssipatioh: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic
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2N6516
625mW
2N6515
T-29-21
100mA,
20MHz
2N6515
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PDF
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Untitled
Abstract: No abstract text available
Text: I IME D I ^SAMSUNG S E M ICON DUC TOR INC KSR2203 I 000713*1 0 PNP EPITAXIAL SILICON TRANSISTOR - CT=37- >3 SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor(R =22K0, R1=22Kfl)
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KSR2203
71bm42
00O713\C^
KSR1203
O-92S
AM64ENT
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PDF
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Untitled
Abstract: No abstract text available
Text: PANASONIC INDL/ELEK -CIO 75 ]>F| 1^32052 0007115 2 f 6932652 PANASONIC INDLtELECTRONIC L S T T L 72C 07195 D VYf-Gl DN74LS261 /DN74LS261S D N 7 4 L S '> U - X D N 7 4 L S 2 6 1 D N 7 4 L S 2 6 1S 2 -b it-B y -4 -b it P arallel Binary M ultipliers • ft m
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DN74LS261
/DN74LS261S
261/S
16-DIP
dn74LS261/dn74LS261S
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PDF
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SLR-54
Abstract: PG-2000 slr-331 SLR-38 ROHM SLR-54
Text: 7 f l 2 f l ci ‘i ‘ï S LED Indicator Lamps ROHM CO 00071m 137 IRHP1 LTD 5bE •LED Lamps, Two-Color LEDs ^ H I -£ \ Wide range of product type including reflective lamp, block type and in various shape. The applications include pilot, bar display, flat illumination display, backlight, etc.
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00071m
SLP-121)
700nm
SLR-55
SLR-57
SLR-80
SLR-54
PG-2000
slr-331
SLR-38
ROHM SLR-54
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PDF
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358 IC
Abstract: transistor 359 AJ 2SC4453 S2E MARKING 2S12 transistor npn d 2058
Text: SANYO SEMICONDUCTOR CORP 2SC4453 52E D • 7 ^ 7 Q ? h 0007104 t ■ T-35-09 2018A N PN Epitaxial Planar Silicon Transistor High-Speed Switching Applications 2S12 F e a tu re s • F ast switching speed • Low collector saturation voltage • High gain-bandwidth product
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2SC4453
2SC4453-applied
358 IC
transistor 359 AJ
S2E MARKING
2S12
transistor npn d 2058
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PDF
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ECG Cross Reference
Abstract: transistor ECG128 Philips ECG 152 ECG159 transistor ECG159 ECG2355 NPN pnp MATCHED PAIRS ECG289A ECG184 cross reference ECG157
Text: PHILIPS E C G INC 54E D Transistors cont'd ECG Type Description and Application • ^53^20 00071b2 OBT « E C G (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts BVc b o BV c e O
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00071b2
ECG2429
ECG2428)
OT-89
T20-5
ECG2430
ECG2431
ECG2431
ECG Cross Reference
transistor ECG128
Philips ECG 152
ECG159
transistor ECG159
ECG2355
NPN pnp MATCHED PAIRS
ECG289A
ECG184 cross reference
ECG157
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PDF
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER IO R 73 De | m ö 5S452 0007151 0 I Data Sheet No. PD-3.171 in t e r n a t io n a l , r e c t if ie r S52KF SERIES 400-200 VOLTS RANGE STANDARD TURN-OFF TIME 10 fjs 2060 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE HOCKEY PUK SCRs VOLTAGE RATINGS
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5S452
S52KF
S52KF4B.
000715b
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PDF
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p1aa
Abstract: No abstract text available
Text: INTEGRATED DEVICE 3ÔE D • 4A2S771 0007174 Ô ■ IDT _ "T- Hfc-2.2-11 2 X 4K x 60 DATA/INSTRUCTION CACHE MODULE FOR IDT79R3000 MULTIPROCESSOR _ PRELIM INARY IDT7MB6064 FEATURES: DESCRIPTION: • High-speed CEMOS static RAM module constructed
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4A2S771
IDT7MB6064
IDT79R3000
IDT79R3000
12MHz,
20MHz,
25MHz
33MHz
IDT7MB6064
p1aa
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PDF
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d 331 TRANSISTOR equivalent
Abstract: C 3311 transistor la 4142 74143
Text: SA MSUNG SEM ICO NDUCTOR INC 14E D | 7Tb4142 00071,5*1 4 I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5010 C o l o r t v h o r iz o n t a l o u t p u t APPLICATIONS DAMPER DIODE BUILT IN High Collector-Bass Voltage VCbo =1500V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)
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7Tb4142
KSD5010
GQG77fe
d 331 TRANSISTOR equivalent
C 3311 transistor
la 4142
74143
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