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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: / T u r m LTC140Q TECHNOLOGY C om plete SO-8,12-Bit 400ksps ADC w ith Shutdown F€OTUR€S DCSCMCTlOn • Complete 12-Bit ADC in SO-8 ■ Single Supply 5V or ±5V Operation ■ Sample Rate: 400ksps ■ Power Dissipation: 75mW Typ ■ 72dB S/(N + D) and -80dB THD at Nyquist	OCR Scan	LTC140Q 12-Bit 400ksps 12-Bit 400ksps -80dB 400ksps, 75mWfrom LTC1285/LTC1288	PDF
CKE50 Abstract: No abstract text available Text: CMOS LSI SA0YO LC382161 AT -10/12/15 2 MEG 65536 Words X 16 Bits X 2 Banks Synchronous DRAM Target Specifications Overview The LC382161AT product is a 3.3V single-voltage power supply Synchronous DRAM (SDRAM) with a 65536-word x 16-bit x 2-bank organization. This SDRAM features a large capacity, high speed, and low	OCR Scan	LC382161 LC382161AT 65536-word 16-bit 50-pin 7cH707b 001772b DD1772? CKE50	PDF
MI105 Abstract: No abstract text available Text: b 2 4 cì f l g cl DD1 7 7 2 S 4 5 T • ANTENNA SWITCH MI 105 PIN DIODE DESCRIPTION OUTLINE DRAWING The MI105 PIN diode is employing a high reliability glass construction, designed for small signal switching. FEATURES • • • • • Dimension: mm	OCR Scan	MI105 100MHz) 001772b	PDF
Untitled Abstract: No abstract text available Text: •ONY I C X P811 2 0 /8 1 1 2 4 CMOS 8-bit Single Chip Microcomputer Description The C XP81120/81124 is a CMOS 8-bit micro computer which consists of A/D converter, serial interface, timer/counter, time base timer, PWM output, as well as basic configurations like 8-bit	OCR Scan	XP81120/81124 16-bit 250ns 16MHz 333ns 12MHz QFP-64P-L01 QFP064-P-1420 42/COPPER CXP81120/81124	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC b?E D • D0177B0 5T7 PRELIMINARY KM6164002 CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA(Max.)	OCR Scan	D0177B0 KM6164002 KM6164002J-20: 240mA KM6164002J-25: 220mA KM6164002J-35: 200mA KM6164002J: KM6164002	PDF
18-PIN Abstract: MSM51C256A 1772B Text: O K I Semiconductor MSM5 1 C256 A 262,144-Word x 1-Bit DYNAMIC RAM DESCRIPTION The MSM51C256A is a new generation dynamic RAM organized as 262,144-word x 1-bit. The technology used to fabricate the MSM51C256A is OKI's COMS silicon gate process technology.	OCR Scan	MSM51C256A 144-Word MSM51C256A b724240 24g40 D01773E 18-PIN 1772B	PDF
headland 386 Abstract: transistor zo 607 MA 7S b2211 full subtractor using ic 74138 Text: LOGIC LCB300K Cell-Based 5 Volt ASIC Products Databook October 1994 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.	OCR Scan	LCB300K DB04-000049-00, D-102 I40lg headland 386 transistor zo 607 MA 7S b2211 full subtractor using ic 74138	PDF
ATF-36077-STR Abstract: 5965-8726E Text: Thal H E W L E T T mLEm P A C K A R D 2 -1 8 GHz Ultra Low N oise Pseudomorphic HEMT Technical Data ATF-36077 Features Description • PHEMT T echnology • Ultra-Low N o ise Figure: Hewlett-Packard’s ATF-36077 is an ultra-low-noise Pseudomorphic High Electron Mobility Transistor	OCR Scan	ATF-36077 ATF-36077 5962-0193E 5965-8726E 44475A4 001772b ATF-36077-STR 5965-8726E	PDF