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    Text: • b 2 4 ^ 02=1 o«eUN»N^v 0017T34 S24 ■ MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFS44V2527 2 .5 ~ 2 .7 G H z BAND 2 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F S 4 4 V 2 5 2 7 is an internally impedance-matched GaAs power F E T especially designed for use in 2 - 5 —2 .7


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    0017T34 GFS44V2527 PDF