STR 6656
Abstract: transistor str 6656 13001 TRANSISTOR Transistor mcr 22-8 413 mark 74w npn SI 13003 str 12006 atmel 0744 13001 TRANSISTOR equivalent str 10006
Text: Version 2.0 Produced in June 1997 R SSharp Programmable Controller New Satellite JW10 User's Manual We thank you for your purchase of the SHARP programmable controller JW10. Carefully read this user's manual and the JW10 instruction manual attached to the system
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Original
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ZM-40D/L,
ZM-61E/T,
ZM-70D/T
Appendix17
ZM-31SE)
RS422]
Appendix18
STR 6656
transistor str 6656
13001 TRANSISTOR
Transistor mcr 22-8 413
mark 74w npn
SI 13003
str 12006
atmel 0744
13001 TRANSISTOR equivalent
str 10006
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Untitled
Abstract: No abstract text available
Text: ADV MICRO I MEMORY IME D • 025752Ö 0020233 57C4501-50/65/80 High Density First-in First-out FIFO 512x9 CMOS Memory <i a Advance Information ui o DISTINCTIVE CHARACTERISTICS Retransmit capability Expandable In both width and_depth Increased noise immunity for XI - CMOS
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57C4501-50/65/80
512x9
57C4501
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5116170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116170 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116170 achieves high integration, high-speed operation, and low-power
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MSM5116170
576-Word
16-Bit
MSM5116170
42-pin
50/44-pin
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km416c254b
Abstract: No abstract text available
Text: CMOS DRAM KM416C254B, KM416V254B 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,
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KM416C254B,
KM416V254B
256Kx
256Kx16
00E02M3
km416c254b
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Untitled
Abstract: No abstract text available
Text: HB56T433D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56T433D is a 4 M x 32 dynamic RAM Small Outline DIMM S.O.DIMM , mounted 8 pieces of 16 Mbit DRAM (HM 5117400BTS/BLTS) sealed in TSOP package. An outline of the HB56T433D is 72-pin
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HB56T433D
304-word
32-bit
ADE-203Rev.
5117400BTS/BLTS)
72-pin
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AC-326
Abstract: No abstract text available
Text: • asmais q d b o 23 m 45t ■ A -OS’ 19-/73 A COMPANY TYPE 224D Foil Tantalum Capacitors Foil Capacitors for +85°C and +125°C Operation Hermetically-Sealed, Rectangular Metal-Case T an talex OF SPRAGUE FEATURES High volumetric efficiency and a more reliable internal construction
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MIL-C-3965.
AC-326
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5116170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116170 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116170 achieves high integration, high-speed operation, and low-power
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OCR Scan
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MSM5116170
576-Word
16-Bit
MSM5116170
42-pin
50/44-pin
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PDF
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AWF2000
Abstract: FAA-PMA
Text: THTrSSTSTTRS" H MICRO SWITCH f* e e p o rt Y Z - 2R SW ITCH-BASIC Illin o is A DIVISION O F H O N EYW ELL AWF2000 F E O . M FO . C O 0 E • • « • FAA-PMA h*-.9l7±.OIO-H .0 9 4 ¡r D IA - -.0 1 5 MAX CM PRETRAVEL i N 1 -.625± .0I5 > - T 1 _
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AWF2000
C093346
94212-K
21mar06
13may08
force--------9-13
-L288--L306--L315-
AWF2000
FAA-PMA
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PDF
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Z16C00
Abstract: zilog z16c01 16C02 Z16C01-10LMB Z16C01 tda 2015 Z16C011 Z16CO 0gsd
Text: ZILOG INC 30E D m =^04043 GQ2Ü23Q 3 m i l l m ilit a r y P r o d u c t SpecmcATiott 7 -4 Ç - / 7 - / ^ Z 1 6 C 0 1 /2 CPU C entral P r oc e s s i n g U ni t FEATURES • System and Normal operating modes ■ Fully static device ■ Fast hardwired instruction control
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Z8000
Z16C01
Z16C02
to-32
52-Pin
216C01
48-Pin
Z16C0110CME
Z16C0110CMB
Z16C00
zilog z16c01
16C02
Z16C01-10LMB
tda 2015
Z16C011
Z16CO
0gsd
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PDF
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TDA 5700
Abstract: No abstract text available
Text: a s m a iB onst ?3M Mat • _A - XT- /■?•/? A TYPE 224D Foil Tantalum C apacitors Foil C apacitors for +85°C and +125°C Operation H erm etically-Sealed, Rectangular M etal-Case T antalex CO M PANY OF SPRAGUE T FEATURES High volumetric efficiency and a more reliable internal construction
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MIL-C-3965.
TDA 5700
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Untitled
Abstract: No abstract text available
Text: a s m a i s OOEOSI? 347 TYPE 140D, 141D PERFORMANCE CHARACTERISTICS Continued 7.3 At + 125°C, the leakage current shall not exceed the initial requirement, capacitance shall not change more than 15% from initial value and the equivalent series resistance shall not exceed 130% of the Initial
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abb ac drive circuit diagram
Abstract: No abstract text available
Text: DATASHEET PM PMC-971154 ISSUE 5 p r e li m in a r y STANDARD PRODUCT | ^ I \ # I • PMC-Sierra, Inc. PM7324 sajni-a t l a s S/UNI-A TM LA YER SOLUTION PM7324 S/UNI-ATLAS SATURN USER NETWORK INTERFACE ATM LAYER SOLUTION DATASHEET PRELIMINARY ISSUE 5: JAN 1999
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PMC-971154
PM7324
PM7324
DGED144
31x31
1D04111
D05DLD3
abb ac drive circuit diagram
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Untitled
Abstract: No abstract text available
Text: M IT S U B IS H I L S Is M5M44260CJ,TP-5,-6,-7, -5S,-6S,-7S F A S T P A G E M O D E 4 1 9 4 3 0 4 -B IT 2 6 2 1 4 4 -W O R D B Y 1 6 -B IT D Y N A M IC R A M DE SC R IP TIO N P IN C O N FIG U R A T IO N (T O P V IE W ) This is a family of 262144-word by 16-bit dynamic RAMs,
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M5M44260CJ
262144-word
16-bit
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IRGNIN150M06
Abstract: c442 diode C442
Text: International is ] Rectifier Provisional Data Sheet P D -9 .1 154 IRGNIN150M06 "CHOPPER" IG B T INT-A-PAK Low conduction loss IG BT • Rugged Design • Simple gate-drive • Switching-Loss Rating includes all "tail" losses • Short circuit rated Description
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IRGNIN150M06
C-442
IRGNIN150M06
c442 diode
C442
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Untitled
Abstract: No abstract text available
Text: RC32DPM RC32DPM Mobitex Wireless Modem Data Pump with V.32 bis Wireline Support * Rockwell INTRODUCTION FEATURES The Rockwell RC32DPM modem data pump MDP provides the baseband signal processing needed to support the Mobitex wireless packet data system. The RC32DPM combines packetswitched data communication functionality with V .32 bis data
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RC32DPM
RC32DPM
PD68J/GPOO-D164
68-Pin
D02D2T1
MD108
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qml-38535
Abstract: tl tyre performance
Text: REVISIONS LTR A DESCRIPTION DATE YR-MO-DA Technical editorial changes to Table I . Add footnotes to timing waveforms. APPROVED 96-03-08 M. L. Poelking REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE
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MIL-BUL-103
QML-38535.
QML-38535
MIL-BUL-103.
002025S
5S373
tl tyre performance
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DX-68-CV1
Abstract: CL230-0 250M AC125V CL313-0351-6 DX20A-68S CONNECTOR 1.27mm pitch 5 pin dip UL20276 30 AWG DC-50-CV UL20276 28 AWG CABLE
Text: DX SERIES HIGH-DENSITY I/O CONNECTORS General / * D X se rie s hig h -density I/O cn n ecto rs with b e llo w co n - varied and c o m p le te lines of H ig h -D e n s ity c o n n e c to rs ^ tacts are p e rfe c t for to m o rro w ’s m iniaturized e le ctro n ic
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200VAC
100mm
150mm
720mm
400kg
DX-68-CV1
CL230-0
250M
AC125V
CL313-0351-6
DX20A-68S
CONNECTOR 1.27mm pitch 5 pin dip
UL20276 30 AWG
DC-50-CV
UL20276 28 AWG CABLE
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RX 3E
Abstract: RX-3E 8 Radio Corporation of America 252B marking LT 5216 1965-REVISED rca RX- 3E sur 288 SRDL oa 1160
Text: CORPORATION OF A M E R I C A . ELECTRONIC DATA PROCESSING PROCESSORS @ VU incui inumi RADIO REFERENCE MANUAL R A D I O C O R P O R A T I O N 70-35-601 March 1966 OF A M E R I C A The information contained herein is subject to change without notice. Revisions may be
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI ICs TV M54487FP 1.0GHz 1/128. 1/136 2-MODULUS HIGH SPEED PRESCALER DESCRIPTION The M54487FP is a semiconductor integrated circuit with ECL circuitry and includes built-in, dual-modulus frequency PIN CONFIGURATION (TOP VIEW) POWER SUPPLY Vcc ^
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M54487FP
M54487FP
1000pF
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TDC 1013
Abstract: stc 1740 AMI Semiconductor 0527 pulse generator crank F464 014C0 MPS 0902 5a07 37BP MPS 1482
Text: Order this document as AN476/D MOTOROLA • SEMICONDUCTOR APPLICATION NOTE AN476 CPU 16 and the configurable timer module CTM in engine control By Ross Mitchell, MCU Applications, Motorola Ltd., East Kilbride, Scotland Introduction Engine control is very demanding not only for the hardware that must survive the harsh environment, but
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AN476/D
AN476
AN476/D
TDC 1013
stc 1740
AMI Semiconductor 0527
pulse generator crank
F464
014C0
MPS 0902
5a07
37BP
MPS 1482
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PDF
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philips power transistor bd139
Abstract: BU406F BU407F 407F
Text: N AUER PHILIPS/DISCRETE bbiS3^31 D02fl53G 7M1! M A P X bU 4UblBU 407F bTE D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn pow er transistor in a SO T186 envelope w ith ele c tric a lly Isolated m ounting base, intended fo r use in converters, inverters, sw itching regulators
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D02fl53G
bU4Ubl-BU407F
OT186
BU406F
philips power transistor bd139
BU407F
407F
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LT016
Abstract: LT08 YD-350 ecu schematics AIX200 LT08C LBd8 AIX2024 COF2001
Text: ADV faCRO PLA/PLE/ARRAYS 13E D Am353 b oas?sat, aoaasib 1 1 Mixed ECL/TTL I/O Mask-Programmable Gate Array > 3 DISTINCTIVE CHARACTERISTICS Integrated up to 410 ECL-equivalent gates in a 24-pin slim DIP , to eliminate "g lu e " logic, resulting in reduced
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Atn353
24-pin
AIS-WCP-15M-9/88-0
LT016
LT08
YD-350
ecu schematics
AIX200
LT08C
LBd8
AIX2024
COF2001
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PDF
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M54937SP
Abstract: M54937 20P2N-A 2a272
Text: MITSUBISHI ICs TV M54937SP/FP SERIAL INPUT PLL FREQUENCY SYNTHESIZER FOR VCR DESCRIPTION The M54937SP/FP is a semiconductor integrated circuit, an oxide-film separated ECL/I2L PLL frequency synthesizer. The prescaler and PLL, with a maximum operating frequency
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M54937SP/FP
M54937SP/FP
50kHz/step)
8125kHz
M54937SP
M54937
20P2N-A
2a272
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PDF
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TRF-1445D
Abstract: No abstract text available
Text: INTEGRATED TOSHIBA TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT CIRCUIT TECHNICAL TA8690AN DATA SILICON MONOLITHIC PAL/N TSC DUAL MODE COLOR TV SINGLE CHIP SIGNAL PROCESSING 1C The TA8690AN is provided with the circuit of P1F, SIF, video, chroma, deflection. And the package the small DIP
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TA8690AN
TA8690AN
54pins)
SDIP54-P-600
0025/iF
TRF-1445D
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