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    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE 25E D • bt.S3T31 QaaEbbT S ■ BYV118 SERIES , l 7 = V 0 3 -/7 SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage, platinum-barrier double rectifier diodes in plastic envelopes featuring low forward voltage drop, low capacitance and absence of stored charge. They are intended for use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and


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    S3T31 BYV118 0022b7b 53T31 0022b77 PDF

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    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4 Internally Matched Power GaAs FETs C-Band Features • High power - PidB = 36.0 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 6.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package


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    TIM7785-4 0022b7Ã MW51040196 TIM7785-4 PDF

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    Abstract: No abstract text available
    Text: O K I electronic components KGF1191_ Small-Signal Amplifier for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1191 is a tw o-stage small-signal am plifier, w ith frequencies ranging from the UHF band to the L band, that features low voltage operation, low -current dissipation, high gain, and high


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    KGF1191_ KGF1191 0G22bà KGF1191 D022t PDF