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    aeg d 188

    Abstract: aeg d 188 s 1000 ir 0588 DIN 4154 BR135
    Text: A E G CORP 17E D 002T42b OOCHflT? 1 1N 4154 S electronic CreativeTechnotogies Silicon Epitaxial Planar Diode A p p lica tio n s: Extreme fast switches D im en sio n s In m m ottoe Cathode \ -I I - II- 11 <3.9 1 >26 g<tfl / *<0.65 • »


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    rLS25Â aeg d 188 aeg d 188 s 1000 ir 0588 DIN 4154 BR135 PDF

    ir 0588

    Abstract: LL4150
    Text: A E G CORP 17E D 002T42b 000=1071 5 LL4150 TTECLESIFDJjKllrStMiK! electronic Creative Technolog >es T-03-01 Silicon Epitaxial Planar Diode Application: High speed switch Dimensions in mm Term inals are tin plated C ath o d e Glass case SO D 80 MiniMELF Weight max. 0.1 g


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    G02T42b 11LIPMK LL4150 mmx50 G0Q1fl72 LL4150 T-03-09 ir 0588 PDF

    T 4148

    Abstract: n4148 N 4148 Diode N4148 diode 4149 1N4148 1n 4148 diode 4446 T03B 95288
    Text: A E G CORP 17E D TTSUHFIUMìSIIIiO electronic CtealcveTechna'ogies o a a m a t a o c n a a i 5 • 1 N 4148 - 1 N 4 1 4 9 - 1 N 4446 1 |M 4447 • 1 N 4 44 8 -1 N 4449 Silicon Epitaxial Planar Diodes A pplication s: Extreme fast switches Features: • •


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    002T42b N4148 DIN41 -T-03 2c142b T 4148 N 4148 Diode N4148 diode 4149 1N4148 1n 4148 diode 4446 T03B 95288 PDF

    thyristor aeg

    Abstract: aeg powerblock tt aeg powerblock tt 32 n thyristor AEG t 10 n 600 aeg thyristor aeg powerblock td aeg tt 18 n 1200 aeg tt 46 n 1200 AEG DD 65 N 1200 K AEG DD 31 n 1200
    Text: A E G CORP 17E D • GOa'iMSb 000=1313 4 Powerblocks für netzgeführte Stromrichter Power modules for line commutated converters Modules surmoulés pour applications secteur é zté -o l I - - « r- a 3 TT.N - Vollgesteuerte Kompaktbaustelne/Fully controlled power modules/Modules surmoulés à 2 thyristors


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    DT18N 75VDRM 00V/ns thyristor aeg aeg powerblock tt aeg powerblock tt 32 n thyristor AEG t 10 n 600 aeg thyristor aeg powerblock td aeg tt 18 n 1200 aeg tt 46 n 1200 AEG DD 65 N 1200 K AEG DD 31 n 1200 PDF

    transistor BU 102

    Abstract: transistor application transistor K 903 T-33-13 br 903 t33-13 ZC125 AEG v 300
    Text: A E G CORP 1?E D □ Q S T HS t a QGGTSQB T BU 903 electronic CreatviTechnotogies T- 33-13 Silicon NPN Power Transistor Application: Switching mode power supply Features: • In triple diffusion technique • Short switching time • Glass passivation • Power dissipation 125 W


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    T-33-13 transistor BU 102 transistor application transistor K 903 T-33-13 br 903 t33-13 ZC125 AEG v 300 PDF