RXIDk 2H
Abstract: asea ri 5A relay RTXP 18 5 MVA generator MVA generator transformer 2 mva RXIDG 838-AA 838-HA 1MDU09024-EN
Text: Time-overcurrent relays and protection assemblies RXIDK 2H, RAIDK, RXIDG 21H, RAIDG Page 1 1MRK 509 002-BEN Issued January 2004 Revision: A Data subject to change without notice SE970134 (SE970150) Features RXIDK 2H relay and assemblies • Single-, two-, three-phase and three-phase
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002-BEN
SE970134)
SE970150)
315-B
315-C
015-BEN
018-BEN
003-BEN
004-BEN
RXIDk 2H
asea ri 5A relay
RTXP 18
5 MVA generator
MVA generator
transformer 2 mva
RXIDG
838-AA
838-HA
1MDU09024-EN
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BYD14
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bb53T31 002bS52 27fl • APX BYD14 SERIES b^E D L M AINTENANC E TYPE CONTROLLED AVALANCHE RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded ID * envelopes and intended fo r general purpose rectifier applications.
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bb53T31
002bS52
BYD14
BYD14D
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Untitled
Abstract: No abstract text available
Text: bE4cîô2b 002bS2b 6^3 MF1069S-1 FOR DIGITAL MOBILE TELEPHONE, Lo DESCRIPTION FEATURES This SAW filter for the local frequency RF circuit of digital mobile communication equipment operating at 1607 MHz ~ 1631 MHz. MF1069S-1 TYPICAL CHARACTERISTICS 1. SMD package insures small size, lightweight.
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002bS2b
MF1069S-1
MF1069S-1
000MHz
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GP001 EPIC
Abstract: No abstract text available
Text: 37E D Ol 4302271 002bSfl7 b IHAS .Radiation-Hardened High-Reliability ICs HARRIS SEfllCOND SECTOR GP517/1RZ Advance Information I3 > High-Reliability, Radiation-Hardened C M O S/SO S interrupt Controller A e ro s p a c e C lass S S c re e n in g Features:
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002bSfl7
GP517/1RZ
il-Std-1750A
RCA-GP517/1RZ,
GP001 EPIC
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bTE D IJJ UU bbSB'ni 002bS37 Tbl BY720 BY721 Jl IAPX SILICON VERY FAST EHT SOFT-RECOVERY RECTIFIER DIODES* EHT rectifier diodes in glass envelopes intended for use in high voltage applications such as the high voltage supply o f television receivers and monitors at frequencies in excess of 30 kHz. The devices
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002bS37
BY720
BY721
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toshiba 8823
Abstract: MFM encoder
Text: TOSHIBA CUC/UP b4E D IT0S3 T G cJ724cì 002bSSl 76T HARD DISK CONTROLLER 11 TC8563AF-88 Variable Frequency Oscillator for Hard Disk 1. GENERAL DESCRIPTION The TC8563AF-88 is a single chip VFO developed for easy realization of a hard disk system together with
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J724c
002bSSl
TC8563AF-88
TC8563AF-88
TC8560F.
16MHz
lCn724,
TC8563AF-88-25
TC8563AF-88-26
toshiba 8823
MFM encoder
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Untitled
Abstract: No abstract text available
Text: 5Ü GEC PLESSEY MAY 1996 S I' M I C O N I U C T O R S ADVANCE INFORMATION DS4054-2.2 WL100 WLAN INTERFACE CIRCUIT The WL100, together with the DE6003 frequency hopping radio transceiver, im plem ents a wide variety of WLAN applications where NRZ encoding is used.
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DS4054-2
WL100
WL100,
DE6003
156-25kb/s,
250kb/s,
312-5kb/s,
500kb/s,
625kb/s
CRC-32
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Untitled
Abstract: No abstract text available
Text: P U R R -B R O W N DAC667 Microprocessor-Compatible 12-BIT DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION • ±1/2LSB MAX NONUNEARITY OVER TEMPERATURE • MONOTONICITY GUARANTEED OVER TEMPERATURE • MICROCOMPUTER INTERFACE: Double-Buffered Latch • VOLTAGE OUTPUT: ±10V, ±5V, +10V
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DAC667
12-BIT
345mW
AD667
DAC667
16-Bit
17313b5
002BS3M
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KDS 7c
Abstract: 4900 SIEMENS siemens EC 230 98 BSM651F
Text: H7E D • Ö235bü5 DDSb533 3 « S I E G SIEMENS AKTIENGESELLSCHAF T -Z 5 -0 1 SI MOP AC" Module V ds =500 V Id = 6 x 9 A BSM 651 F R DS on = 0.7 Q • • • • • • • Power module 3-phase full-bridge FREDFET N channel Enhancement mode Package with insulated metal base plate
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DDSbS33
T-25-01
C67076-A1500-A2
bsm651f
A235bD5
KDS 7c
4900 SIEMENS
siemens EC 230 98
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI MICROCOMPUTERS M 37702M 4LXXXGP SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION • W id e op erating te m p e ra tu re ra n g e . — 4 0 ~ 8 5 ‘C m icro • In te rru p ts . •.
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37702M
16-BIT
20/25ns
25mVrms,
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Untitled
Abstract: No abstract text available
Text: IDT70V07S/L HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta neous access of the same memory location • High-speed access — Commercial: 25/35/55ns max. • Low-power operation
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IDT70V07S/L
25/35/55ns
IDT70V07S
450mW
IDT70V07L
IDT70V07
80-pin
PN80-1)
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is DRAM MODULE MH16M09AJ-6,-7/ MH16M09ACJ-6.-7 5 FAST PAGE MODE 150994944-BIT (16777216-WORD BY 9-BIT) DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M H16M 09AJ/ACJ is 16777216-word by 9-bit dynamic RAM and consists of nine industly
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MH16M09AJ-6
MH16M09ACJ-6
150994944-BIT
16777216-WORD
09AJ/ACJ
MH16M09AJ-6
MH16M09ACJ-6
MH16M09AJ-7
MH16M09ACJ-7
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is DRAM MODULE M H4M36AAU J-65,-75/ M H4M36AANU J-65,-75 FAST PAGE MODE 150994944-BIT (4194304-WQRD BY 36-BIT) DYNAMIC RAM DESCRIPTION The M H 4M 36A A U J/A A N U J PIN CONFIGURATION (TOP VIEW) [Single side] is 419 43 0 4 -word x 3 6 -bit
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H4M36AAU
H4M36AANU
150994944-BIT
4194304-WQRD
36-BIT)
4194304-WORD
MH4M36AAUJ
MH4M36AANUJ
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NCS036-002-BS
Abstract: bs 3550 NCS026-002-BS
Text: Blade to Blade Interface Receptacle with Right Angle Thru Hole Terminals NCS Series ORDERING INFORMATION P/N: NCS*-002-BS 2: Right Angle Thru-Hole Terminal Pin Count MATERIAL Insulator Contact Metal Shell CHARACTERISTICS Insulation Resistance Breakdown Voltage
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-002-BS
500MQ
500mA
UL94V-0
NCS026-002-BS
NCS036-002-BS
NCS050-002-BS
NCS068-002-BS
NCS100-002-BS
D000732
bs 3550
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96-Seg
Abstract: No abstract text available
Text: KS57C2408 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2408 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit product development approach, SAM4 Samsung Arrangeable Microcontrollers . Its main features
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KS57C2408
KS57C2408
up-to-12-digit
16-bit
80-pin
002b535
71b4142
D0SbS37
96-Seg
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by713
Abstract: No abstract text available
Text: b^E » • bbsa^ai DOEbss? oia « apx A BY712 BY713 BY714 SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODES* E.H.T. rectifier diodes in glass envelopes intended fo r use in high-voltage applications such as the highvoltage supply o f television receivers and monitors. The devices feature non-snap-off characteristics.
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BY712
BY713
BY714
by713
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IC A 3126
Abstract: No abstract text available
Text: YA MA IC HI E L E C T R O N I C S INC bßE D • ^4553^ ODDDbO'i TS1 1 SCSI-H CONNECTORS yam a ich i — —— ■ NHS/NHPSeries Half Pitch Interface Connectors N H S * * * - OM - B S Straight Solder DIP T>pe Socket >Cross Section of Contact Area CL O CO
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NHS026-004-*
NHS050-004-*
NHS068-004-*
27x12
-002-BS)
NHS026-002-BS
NHS050-002-BS
NHS068-002-BS
-004-BS)
NHS050-004-BS
IC A 3126
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is DRAM MODULE MH4M32BJ-6,-7/ MH4M32 NBJ-6, -7/ MH4M32SBJ-6,-7 FAST PAGE MODE 134217728-BIT (41943Û4-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH4M32BJ/NBJ/SBJ is 4194304-word by 32-bit PIN CONFIGURATION (TOP VIEW) [Both side] dynamic RAM module. That module consists of thirty-two
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MH4M32BJ-6
MH4M32
MH4M32SBJ-6
134217728-BIT
32-BIT)
MH4M32BJ/NBJ/SBJ
4194304-word
32-bit
MH4M32BJ-6
MH4M32NBJ-6
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TC518128BPL
Abstract: No abstract text available
Text: TOSHIBA TC518128BPI/BFVBFW I/BFTL-70V/80V/10V SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power
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TC518128BPI/BFVBFW
I/BFTL-70V/80V/10V
TC518128B-V
TC518128B-V
-70V/80V/1
TC518128BPL/BFL/BFWUBFTL-70V/80V/1OV
TC518128BPL
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TC8563F-55
Abstract: No abstract text available
Text: TOSHIBA UC/UP fcjME D • aD5bS2fl 3T7 »T 0 S 3 HARD DISK CONTROLLER 11 TC8563F-55 Variable Frequency O scillator for Hard Disk 1. G E N E R A L DESCRIPTION The TC8563F-55 is a single chip VFO developed for 45 31 easy realization of a hard disk system together w ith the
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TC8563F-55
TC8563F-55
T7518.
16MHz
TC8563F-55-21
TC8563F-55-22
60PINFP
C8563F-55-23
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Untitled
Abstract: No abstract text available
Text: B U R R - BROW N ADS802 • & *& *& 12-Bit, 10MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • NO MISSING CODES The ADS802 is a low power, monolithic 12-bit, 10MHz analog-to-digital converter utilizing a small geometry CMOS process. This COMPLETE converter includes
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ADS802
12-Bit,
10MHz
ADS802
10MHz
12-bit
ZZ217
17313bS
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Untitled
Abstract: No abstract text available
Text: ADS801 Æ iaaa^ ^ . 1 2-Bit. 25MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • NO MISSING CODES • LOW POWER: 270mW The ADS801 is a low power, monolithic 12-bit, 25MHz analog-to-digital converter utilizing a small geometry CMOS process. This COMPLETE converter includes
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ADS801
25MHz
270mW
ADS801
12-bit,
25MHz
12-bit
ZZ217
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Untitled
Abstract: No abstract text available
Text: B U R R - BROW N ADS820 S- 10-Bit, 20MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • NO MISSING CODES The ADS820 is a low power, monolithic 10-bit, 20MHz analog-to-digital converter utilizing a small geometry CMOS process. This COMPLETE converter includes
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ADS820
10-Bit,
20MHz
ADS820
20MHz
10-bit
ZZ217
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC518129A P/A SP/A F/A FW W 10/12 TC518129APL/ASPL/AFL/AFW L50/10/12 TC518129AFTL80/10/12 SILICON GATE CM OS 131,072 WORD x 8 BIT CM OS PSEUDO STATIC RAM Description T h e T C 5 1 8 1 2 9 A is a 1M bit high sp e e d C M O S p s e u d o sta tic R A M organized a s 1 3 1,072 w o rd s by 8 bits. The T C 5 1 8 1 2 9 A utilizes
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TC518129A
TC518129APL/ASPL/AFL/AFW
L50/10/12
TC518129AFTL80/10/12
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