Untitled
Abstract: No abstract text available
Text: POWER FLANGE TERMINATION AL UMINUMNITRIDE PERFORMANCE SPECIFICATIONS .180— [4.57] MAX. .062 [1.57] 003 q Part Number: RPT517N3O Frequency: DC VSWR Max : 1.15:1 DCto2.OGHz 1.20:1 2.0to4.0G1-Iz Capacitance: 0.8pF - 4.0 GHz [ 076] 130 [330] 30 WATTS (2KW PEAK)
|
Original
|
RPT517N3O
RPT800N40
RPT800N5O
|
PDF
|
TECI-4N11
Abstract: 4n11
Text: POWER FLANGE RESISTORS AL UMINUM NITRIDE PERFORMANCE SPECIFICATIONS .160 C4.06]— MAX .062 [1.57] Part Number: RPR800N5O Frequency: DC 4.0 GHz Capacitance: 1.4 pF - [2.92] .200 [5.08] MAX - .003 [.076]— DIA. [3.30] .040 [1.02!IH .125 [3.18]— 50 WATTS 2KW PEAK
|
Original
|
RPR800N5O
RPR975N75
RPR800N75
TECI-4N11(
TECI-4N11
4n11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: POWER FLANGE TERMINATION AL UMINUM NITRIDE .250 PERFORMANCE SPECIFICATIONS j6.35] .250 [6.35] MIN. Part Number: RPS100NT .065 [1.65] Frequency: DC 2.0 GHz VSWR Max : 1.25:1 Capacitance: 1.2 pF .250 [6.35] .092 [2.35] 6—32 .003 [.076] - DCto2.OGI-lz .375 [9.52]
|
Original
|
RPS100NT
RPT515N2O
RPT516N2O
|
PDF
|
Untitled
Abstract: No abstract text available
Text: POWER FLANGE TERMINATION AL UMINUM NITRIDE PERFORMANCE SPECIFICATIONS .180 [4.57]— MAX. .087 [2.21jj- Part Number: RPT975N75 Frequency: DC 6.0 GHz VSWR Max : 1.15:1 DCto2.OGHz 1.25:1 2.Oto6.OGHz Capacitance: 1.4 pF .350 [8.89] .115 [2.92] [3.17] MIN. .003 [.0781—
|
Original
|
21jj-
RPT975N75
RPT800N75
RPT820N75
|
PDF
|
Untitled
Abstract: No abstract text available
Text: POWER FLANGE RESISTORS AL UMINUM NITRIDE PERFORMANCE SPECIFICATIONS .110 [2.79]— .003 [.076]——s- I .062 [1.56]- Part Number: RPR3 00N10 Frequency: DC 4.0 GHz Capacitance: 0.7 pF .300 [7.62] - .160 [4.06]— .300 [7.62]— MAX 10 WATTS 1KW PEAK .125 [3.18]—
|
Original
|
00N10
RPR300N1OA
RPR500N15
|
PDF
|
Untitled
Abstract: No abstract text available
Text: POWER FLANGE TERMINATION AL UMINUM NITRIDE PERFORMANCE SPECIFICATIONS .110 [2.79]-.030 Part Number: RPT300N1O Frequency: DC-4.OGHz VSWR Max : 1.10:1 DCtol.5GHz 1.35:1 1.5 to 4.0GHz Capacitance: 0.7 pF .003 [.076]——-— .200 .062 [1 56] .200 .160 [4.06]
|
Original
|
RPT300N1O
RPT500NI2
TUCI-4N11(
|
PDF
|
Untitled
Abstract: No abstract text available
Text: POWER FLANGE TERMINATION AL UMINUM NITRIDE PERFORMANCE SPECIFICATIONS .160 [4.06] MAX .161 DIA. [4.08] — .062 [1.57].187 [4.76] -I .375 [9.52] Part Number: RPT875N75 Frequency: DC -1.5 GHz VSWR Max : 1.20:1 DCtol.OGHz 1.35:1 1.0 to 1.5 GHz Capacitance:
|
Original
|
RPT875N75
RPT620N75
RPT875N
|
PDF
|
Untitled
Abstract: No abstract text available
Text: POWER FLANGE RESISTORS AL UMINUM NITRIDE PERFORMANCE SPECIFICATIONS —.800 [20.32]— .160 [4.06]— MAX .560 [14.22] Part Number: RPR800N 100 Frequency: DC 4.0 GHz Capacitance: 1.0 pF .062 [1.57] H .230 [5.84] .130 DIA. [3.30] .040 [1.02 n H .115 [2.92]
|
Original
|
RPR800N
RPR875N100
TUCHN800N
|
PDF
|
Untitled
Abstract: No abstract text available
Text: POWER FLANGE RESISTORS AL UMINUM NITRIDE PERFORMANCE SPECIFICATIONS Part Number: RPR800N75A .130 DIA. [3.3o][7 .040 [1.021—] Frequency: DC-4.OGHz Capacitance: 1.0 pF F— 75 WATTS 2KW PEAK PERFORMANCE SPECIFICATIONS —.820 [20.82]— 60 ~o[15.24] .235 [5.96]
|
Original
|
RPR800N75A
RPR820N75
RPR875N75
|
PDF
|
Untitled
Abstract: No abstract text available
Text: POWER FLANGE RESISTORS AL UMINUM NITRIDE .250 [6.35] PERFORMANCE SPECIFICATIONS .250 [6.35] .250 [6.35] MIN. RPS100NR Frequency: DC 2.0 GHz Capacitance: 1.2 pF .065 [1.65] .092 [2.35] 6—32 NC—2A THO. Part Number: .062 [1.57] 41.003 [.076] .375 [9.52] .032 WIDE X .035 DEEP SLOT
|
Original
|
RPS100NR
RPR515N2O
I16DIA.
5N20A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: POWER FLANGE TERMINATION AL UMINUM NITRIDE PERFORMANCE SPECIFICATIONS —.800 [20.32]— .160 [4.06] MAX. .062 [1.57] [14.22] ~1.560 .230 [5.84] V .130 DIA. [3.30] III .115 [2.92] .150 [3.61] MIN. Part Number: RPT800N120 Frequency: DC VSWR Max : 1.15:1 DCto4.OGHz
|
Original
|
RPT800N120
181--I
RPT87ON15O
RPT975N200
|
PDF
|
UMIL70
Abstract: 81 210 w 25 is which transistor
Text: UMIL70 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UMIL70 is Designed for High Power Class C Amplifier in, 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 8.5 dB at 70 W/400 MHz
|
Original
|
UMIL70
UMIL70
81 210 w 25 is which transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UMIL-3 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The UMIL-3 is Designed for Class A, B and C Amplifier Applications in the 225 to 400 MHz Military Band. A 45° C E B E B FEATURES: • PG = 12 dB min. at 3 W/ 400 MHz • ηC = 50% min. at 3W/ 400 MHz
|
Original
|
ASI10269
|
PDF
|
UMIL60
Abstract: No abstract text available
Text: UMIL60 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UMIL60 is Designed for High Power Class C Amplifier in, 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 8.4 dB at 60 W/400 MHz
|
Original
|
UMIL60
UMIL60
|
PDF
|
|
|
l82a
Abstract: LT1L82A u82a E82A LT1D82A LT1E82A LT1H82A LT1K82A LT1P82A LT1S82A
Text: LT1 Chip LED Devices ❑ 82A Series LT1 ❑ 82A Series Chip LED Devices With Inner Lens 9 Model No. LT1L82A Red Super-luminosity LT1L82A Red (High-1 uminosity) LT1T82A R e d (High- Iuminosi&) LT1P82A R e d LT1D82A R e d LT1S82A Sunset orange LT1H82A Yellow
|
Original
|
LT1L82A
LT1T82A
LT1P82A
LT1D82A
LT1S82A
LT1H82A
LT1E82A
LT1K82A
LT1E82A
l82a
u82a
E82A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: |. 1 00 |t y p . ± . 003 036 D IA . T Y P, 1 ^ 1 0 .0 0 9 ] RECOMMENDED MOUNTING HOLE PATTERN 1 FT SA REVISIONS U'fcKiMIlN lik Á B umi REV PER EC 0320-136-97 REV PER EC 0330-35-97 m 2fl « ec GJ 21 JU. 97 DH GJ D T, R ECEPTACLE ACCEPTS AN .0 0 8 - .0 Î4
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ±. 003 0 3 6 D IA . |. 1 0 0 |t y p . T Y P, 1^10.009 ] R EC OMM EN DE D MOUNTING HOLE PATTERN 1 FT SA REVISIONS U'KXiMIW Ilk A B umi REV PER EC 0320-136-97 REV P E R EC 0 3 3 0 - 3 5 - 9 7 m 2fl « ec GJ 21 JW. 97 DH GJ D T, LE A D P.C. BOA RD MATING RECEPTACLE
|
OCR Scan
|
|
PDF
|
WS-SR-040-2-3
Abstract: H05VVF3G 69004
Text: BROWN G R N /Y E L BLUE NOTES: 1 317-440 Power Cord Made in China RoHS S /-V ¿ -3 PF 1. ^PCSfe/Jvgl V ' 1 j 2. | 0469-0047 W& ' A YY/WW 150±30 ITEM D (D © © © DESCRIPTION WS-003 BLACK, APPROVAL: EUROPEAN WS-002 BLACK, APPROVAL: EUROPEAN H05VV-F 3G 1.0MMSQ BLACK, APPROVAL: EUROPEAN
|
OCR Scan
|
WS-003
WS-002
H05VV-F
WS-SR-040-2-3
WS-SR-040-3-3
H05VVF3G
69004
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2 D A A W tM G M A D E IN T H IR D A N G L E P R O J E C T IO N p F V *.003 l æ 1 1.125 n w 1 1 . 5 o i % -3 iU N E F NOT * WASHER o« I« z o 5" r o <o> 1 2 4 8 • POSITION 2 3 4 5 6 7 8 9 • >• • m • • • • • • • • • • LOC G y
|
OCR Scan
|
964-T
|
PDF
|
"Advanced Semiconductor, Inc"
Abstract: ADVANCED SEMICONDUCTOR ABP1 ABL9001
Text: 02 58354 A D V A N C E D S E M I C O N D U C T O R ADVANCED SEM ICO ND UC TOR 92D 00100 Ì2 D Ó-f DE|G25fl35M GD0 Q1DG t. | BEAM LEAD SCHOTTKY BARRIER MIXER DIODES A SI’s Beam Lead Schottky Barrier Mixer Diodes are 'manufactured by the deposition of a suitable barrier
|
OCR Scan
|
D25A35M
00QQ10D
-10dBm
10dBm
15dBm
"Advanced Semiconductor, Inc"
ADVANCED SEMICONDUCTOR
ABP1
ABL9001
|
PDF
|
C313C
Abstract: te1050
Text: C ase Outlines D SU FFIX PLASTIC SOIC PACKAGE CASE 751A-03 ISSUE F NOTES 1 DIMENSIONING AND TQLERANCING PER ANSI Vt4 5M, 1982 ? CONTROLLING DIMENSION MILLIMETER 3 DIMENSIONS A ANO 8 DO NOT INCLUDE MOLO PROTRUSION 4 MAXIMUM MOLD PROTRUSION 0 15 10 006> PER SIDE
|
OCR Scan
|
51A-03
10TAL
C313C
te1050
|
PDF
|
I3003
Abstract: i3003 d 27209 sa i3003 54003 c200j cs7001 F7203 CL 6503
Text: 8 DRAWING fttOE IN THIRD ANGLE PROJECTION THIS ORAifING IS I RELEASED FOR PUBLICATION @ Oplftiwr 19 mr AMP umipwim. «u. M m w n a w . nivns « 0 UK m •19 OIST AD 25 REVISIONS rfiooi OM t3 PLC D SPACES AT f2 - ^ 10. 76 r . 4003 - E OA7E I APPO ovr2/ao RCS I
|
OCR Scan
|
C-200J
DJJ44
I3003
i3003 d
27209
sa i3003
54003
c200j
cs7001
F7203
CL 6503
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Stewart Connector r /////////// REV. Jln silco Technologies • ■ V / / / / / / / / / / / 11118 Susquehanna Trail South Glen Rock, PA 1 7 3 2 7 -9 1 9 9 717 2 3 5 -7 5 1 2 Fax: (717) 2 3 5 -7 9 5 4 http: / / www.stewartconnector.com PART NO. - REVISIDN CHANGES
|
OCR Scan
|
CT740083
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HA5232 HA5234 HARRIS a S E M I C O N D U C T O R PRELIMINARY Precision Dual and Quad Operational Amplifiers October 1992 Description Features • .200iiV Max Low Offset V oltage. • Low Offset D r if t . 2(iV/°C • Low Supply C urren t.
|
OCR Scan
|
HA5232
HA5234
200iiV
HA5232
HA5234
HA-4741
CA324.
OP20herwise
1-800-4-HARRIS
|
PDF
|