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    100-P

    Abstract: BUK456 BUK456-60A BUK456-60B T0220AB dm 369 rv
    Text: N AMER PHILIPS/DISCRETE bTE D bbSBTBl 0030b7D LET • APX Product Specification Philips Semiconductors B U K456-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF K456-60A/B BUK456 T0220AB BUK456-60A/B 100-P BUK456-60A BUK456-60B T0220AB dm 369 rv

    Untitled

    Abstract: No abstract text available
    Text: N AHER PHILIPS/DISCRETE bTE D ^53=531 0030b7D Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 0030b7D -TO220AB BUK456-60A/B BUK456

    qml-38535

    Abstract: CDFP2-F14 CQCC1-N20 GDFP1-F14
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 REV STATUS OF SHEETS PMIC N/A REV 1 SHEET 2 3 4 5 6 7 8 9 10 11 12 13 PREPARED BY DEFENSE SUPPLY CENTER COLUMBUS Joseph A. Kerby STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE


    OCR Scan     		PDF 0030t qml-38535 CDFP2-F14 CQCC1-N20 GDFP1-F14