003513B Search Results

003513B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TCA2365 Abstract: A235L Z/Tda 7923 Text: M7E Û235b05 D SIEMENS it 003513b S I SIEG AKTIENGESELLSCHAF TCA 2365 Dual Power Operational Amplifier Bipolar 1C Features • • High output peak current of twice 2.5 A Wide supply voltage range, 8 V to 32 V • • • Outputs entirely protected DC short-circuit proof	OCR Scan	PDF	235b05 003513b Q67000-A1876 Q67000-A8017 P-DIP-18-L-9 P-DIP-18L-9 fi23SbOS T-79-23 IED0051 TCA2365 A235L Z/Tda 7923
Untitled Abstract: No abstract text available Text: < £ Z i I ß Technical Manual G November 1989 Z80180 Z180 MPU FEATURES: • • • • • • Operating Frequency to 10 MHz On-Chip MMU Supports Extended Address Space Two DMA Channels On-Chip Wait State Generators Two UART Channels Two 16-Bit Timer Channels	OCR Scan	PDF	Z80180 16-Bit Z80180 10MHz Z8018008PSC
Untitled Abstract: No abstract text available Text: PRELIMINARY Am79C970A Advanced Micro Devices PCnet -PCI II Single-Chip Full-Duplex Ethernet Controller for PCI Local Bus Product DISTINCTIVE CHARACTERISTICS • Single-chip Ethernet con tro ller fo r the Periph eral Component Interconnect PCI local bus	OCR Scan	PDF	Am79C970A 10BASE-T PQB132 oooooofloooofl00D 16-0000038-PQB-1
km44v4104bk Abstract: KM44C4104 Text: K M 4 4 V 4 10 4 B K CMOS D R A M ELECTR O NICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power	OCR Scan	PDF	KM44V4 KM44V4104BK DD3514L 7Tb4142 D03S147 km44v4104bk KM44C4104
PAL24V10 Abstract: No abstract text available Text: COM’L: H-15/25 ry Advanced Micro Devices PALCE24V1 OH-15/25 EE CMOS 28-Pin Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS • Electrically erasable CMOS technology provides reconfigurable logic and full testability ■ High speed CMOS technology	OCR Scan	PDF	H-15/25 PALCE24V1 OH-15/25 28-Pin 12222E-15 025752b PAL24V10
NPN Silicon Epitaxial Planar Transistor Abstract: IEC134 MZ0912B100Y TACAN Text: Philip»Componant» Data sheet oc I •talus Prefimìrtaiy specification dele of Is m m July 1900 MZ0912B100Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high emitter efficiency. • Diffused emitter ballasting	OCR Scan	PDF	MZ0912B100Y NPN Silicon Epitaxial Planar Transistor IEC134 MZ0912B100Y TACAN