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    Text: N AMER PHILIPS/DISCRETE bTE D L.b53T31 003Db4S 473 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF b53T31 003Db4S O220AB K455-100A/B BUK455 -100A -100B BUK455-100A/B