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    003M2 Search Results

    003M2 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    5962-7802003M2A Texas Instruments Quadruple Differential Line Receiver 20-LCCC -55 to 125 Visit Texas Instruments Buy
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    003M2 Price and Stock

    Tripp Lite N280-03M-28-BK

    SFP28 25GBASE-CR1 PASSIVE TWINAX
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    DigiKey N280-03M-28-BK Box 20 1
    • 1 $94.83
    • 10 $77.309
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    RS N280-03M-28-BK Bulk 2 Weeks 1
    • 1 $148.93
    • 10 $119.15
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    Neutron USA N280-03M-28-BK 50
    • 1 $109.99
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    ITT Interconnect Solutions MDM-15PH003M2

    CABLE ASSY D-MIC-D 15P 457.2MM
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    DigiKey MDM-15PH003M2 Bag 12 1
    • 1 $194.9
    • 10 $158.912
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    PEI Genesis MDM-15PH003M2 601 1
    • 1 $148.7
    • 10 $128.88
    • 100 $89.22
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    ITT Interconnect Solutions MDM-69PH003M2

    CABLE ASSY D-MIC-D 69P 457.2MM
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    DigiKey MDM-69PH003M2 Bag 10 1
    • 1 $419.69
    • 10 $349.475
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    PEI Genesis MDM-69PH003M2 10 1
    • 1 $345.4
    • 10 $325.38
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    ITT Interconnect Solutions MDM-69SH003M2

    CABLE ASSY D-MIC-D 69P 457.2MM
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    DigiKey MDM-69SH003M2 Bag 10 1
    • 1 $460.94
    • 10 $387.212
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    PEI Genesis MDM-69SH003M2 10 1
    • 1 $382.68
    • 10 $360.5
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    ITT Interconnect Solutions MDM-69SH003M2-A174

    CABLE ASSY D-MIC-D 69P 457.2MM
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    DigiKey MDM-69SH003M2-A174 Bag 10 1
    • 1 $512.02
    • 10 $434.375
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    PEI Genesis MDM-69SH003M2-A174 10 1
    • 1 $429.32
    • 10 $404.43
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    Master Electronics MDM-69SH003M2-A174
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    003M2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD138

    Abstract: BDXXX transistors bd136 bd140 power transistor bd136 transistor bd138
    Text: BD136 BD138 BD140 / V SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose p-n-p transistors in SOT-32 plastic envelope, recommended for driver stages in hi-fi amplifiers and television circuits.


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    PDF BD136 BD138 BD140 OT-32 BD135, BD137 BD139 BD136, BD138 BD140 BDXXX transistors bd136 power transistor bd136 transistor bd138

    Untitled

    Abstract: No abstract text available
    Text: AMDËI AmCOXXDFLKA 1,2,4, or 10 Megabyte 5.0 V-only Flash Memory PC Card DISTINCTIVE CHARACTERISTICS Separate attribute memory • High performance Automated write and erase operations increase system write performance — 200/150 ns maximum access time ■ Single supply operation


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    PDF 025752B 003423b

    79c965

    Abstract: AMD 79c97* lance
    Text: a P R E L IM IN A R Y Advanced Micro Devices Am79C965 PCnet -32 Single-Chip 32-Bit Ethernet Controller DISTINCTIVE CHARACTERISTICS • Single-chip Ethernet con tro ller for 486 and V ideo Electronics Standards Association VESA local buses ■ Supports ISO 8802-3 (IEEE/ANSI 802.3) and


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    PDF Am79C965 32-Bit Am486â PCnet-32 79C965 79c965 AMD 79c97* lance

    BDXXX

    Abstract: BDxxx-10
    Text: BD135 BD137 BD139 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose n-p-n transistors in SOT-32 plastic envelope, recommended for driver stages in hi-fi amplifiers and television circuits.


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    PDF BD135 BD137 BD139 OT-32 6D136, BD138 BD140are BD135, BD137 BD139 BDXXX BDxxx-10

    8D140

    Abstract: BDXXX 8d136 BD136-BD138-BD140 BD140 BD136 transistors bd136 transistor sot t06 BD138 BD139
    Text: BD136 BD138 BD140 SILICO N PLANAR EPITAXIAL POW ER T R A N SIST O R S General purpose p-n-p transistors in SO T-32 plastic envelop«, recommended for driver stages in hi-fi amplifiers and television circuits. The BD135, BD137 and BD139 are complementary to the BD136, BD138 and BD140 respectively.


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    PDF BD136 BD138 BD140 OT-32 BD135, BD137 BD139are BD136, BD138 BD140 8D140 BDXXX 8d136 BD136-BD138-BD140 BD136 transistors bd136 transistor sot t06 BD139

    Untitled

    Abstract: No abstract text available
    Text: HN58S65AI Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-670 Z Preliminary - Rev. 0.1 Mar. 13, 1997 Description The Hitachi HN58S65AI series is a electrically erasable and programmable ROM organized as 8192-word


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    PDF HN58S65AI 8192-word ADE-203-670 8192-word 64-byte HN58S65ATI TFP-28DB)

    190-32 UNF-2a

    Abstract: 1N5812 diode 1N5812 1N5814 1N5816 1N5816 diode 478D
    Text: MIL SPECS 44E » • DDQQ12S DG34E74 SST ■ M I L S j INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 February 1994 MIL-S-19500/478E 25 October 1993 SUPERSEDING MIL-S-19500/478D


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    PDF DQQQ12S DG34g7M MIL-S-19500/478E MIL-S-19500/478D 1N5812, 1N5814, 1N5816, JANCA1N5812) 1N5812 A1N5812 190-32 UNF-2a 1N5812 diode 1N5814 1N5816 1N5816 diode 478D

    3hM22

    Abstract: pin configuration of 8251 KM64BV4002J-12 KM64BV4002J-15
    Text: KM64BV4002 CMOS SRAM 1Mx4Bit With / OE High-Speed BiCMOS Static RAM (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002J-12:160mA(Max.)


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    PDF KM64BV4002 KM64BV4002J-12 160mA KM64BV4002J-13 KM64BV4002J-15 KM64BV4002J 32-SOJ-4QO KM64BV4002 304-bit 3hM22 pin configuration of 8251

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY AMD* Am29LV004T/Am29LV004B 4 Megabit 524,288 x 8-Bit CMOS 3.0 Volt-only, Sectored Flash Memory • Data Polling and toggle bit DISTINCTIVE CHARACTERISTICS — Detects program and erase cycle completion ■ 2.7 to 3.6 volt, extended voltage range for read


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    PDF Am29LV004T/Am29LV004B 40-pin Am29LV004 0S575Sf DD34S73

    photoconductive cell cdse

    Abstract: NSL-4960 MSL-5910 cds cell photoconductive cells J 6920 A 6920 Photoconductive Cell J 6920 NSL-6910
    Text: SILONEX INC 47E D • Û2SS271 □□003M2 ê ■ SXI SILONEX s * r Preliminary Data Sheet T O -8 PHO TO CO NDUCTIVE CELLS — ! t -</a v / FEATURES • F iv e Photoconductive Materials


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    PDF fl2SS271 003M2 photoconductive cell cdse NSL-4960 MSL-5910 cds cell photoconductive cells J 6920 A 6920 Photoconductive Cell J 6920 NSL-6910

    IC TTL 7495 diagram and truth table

    Abstract: l7585 LUCL7585DP-D LUCL7585DP-DT 40CF1
    Text: Advance Data Sheet January 1998 m icroelectronics group Lucent Technologies Bell Labs Innovations L7585D Full-Feature, Low-Power SLIC and Switch Features Description • Low active power The L7585D Full-Feature, Low-Power Subscriber Loop Interface Circuit SLIC and Switch integrates


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    PDF L7585D DS98-129ALC DS97-553ALC) IC TTL 7495 diagram and truth table l7585 LUCL7585DP-D LUCL7585DP-DT 40CF1

    Untitled

    Abstract: No abstract text available
    Text: 47E D • 023SbOS G3425&#39;ì 7 ■ S I E G SIEM ENS SIEMENS AKTIENGESELLSCHAF 'T - '- n - t n - c n 5 V-Modulator TDA 5664 Preliminary Data Bipolar 1C Function Monolitic integrated circuit for use as a modulator in the 30 to 860 MHz range. Application Video recorders, cable converters, cable TV head stations,


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    PDF 023SbOS G3425' fl53StiDS DD3424S flS3Sb05 00345Mb B535b05 11MHz

    Untitled

    Abstract: No abstract text available
    Text: K M 4 4 C 10 0 5 D J CMOS DR A M ELECTRONICS 1 M x 4 B i t CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out Quad CAS CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power


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    PDF 16Mx4, 512Kx8) KM44C1005DJ 7Rb4142 KM44C 1005DJ DQ3427b

    transistor h44

    Abstract: BD132 PNP POWER TRANSISTOR SOT-32 BD131 NPN POWER TRANSISTOR SOT-32
    Text: BD132 _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE D A T A Collector-base voltage open em itter Collector-em itter voltage (open base)


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    PDF BD132 OT-32 BD131. O-126 OT-32) 00342SM transistor h44 BD132 PNP POWER TRANSISTOR SOT-32 BD131 NPN POWER TRANSISTOR SOT-32

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY AMDH Am29LV008T/Am29LV008B 8 Megabit 1,048,576 x 8-Bit CMOS 3.0 Volt-only, Sectored Flash Memory DISTINCTIVE CHARACTERISTICS • 2.7 to 3.6 volt, extended voltage range for read and write operations ■ — Hardware method for detection of program or


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    PDF Am29LV008T/Am29LV008B 40-pin m29LV008B 0B575BB Am29LV008

    qml-38535

    Abstract: 5962-9164001M2A 26C32 CQCC1-N20 GDFP2-F16 GDIP1-T16 26C32 National t35c
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Changes in accordance with NOR 5962-R107-95. 95-04-12 M. A. FRYE Add case outline X. Update boilerplate. Editorial chanoes throughout, -rrp 98-02-19 R. MONNIN THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED.


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    PDF 5962-R107-95. qml-38535 5962-9164001M2A 26C32 CQCC1-N20 GDFP2-F16 GDIP1-T16 26C32 National t35c