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    0085H Search Results

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    0085H Price and Stock

    Same Sky HSS-B20-085H

    HEATSINK TO-220 3.4W ALUMINUM
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    DigiKey HSS-B20-085H Bag 5,000
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    Mouser Electronics HSS-B20-085H
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    TME HSS-B20-085H 5,000
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    JAMECO ELECTRONICS ACU140085H5780

    TRANS,WALL,14VAC/850mA,F BLK2.
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    DigiKey ACU140085H5780 1
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    Vishay Sprague M39003-09-0085H

    CAP TANT 22UF 20% 50V AXIAL
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    DigiKey M39003-09-0085H Bulk 20
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    HUBER+SUHNER 72_Z-0-0-8---5_-H

    CONN SOLDER TAG QLA CONNECTORS
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    DigiKey 72_Z-0-0-8---5_-H Bulk 100
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    Vishay Sprague M39003-09-0085-HSD

    CAP TANT 22UF 20% 50V AXIAL
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    DigiKey M39003-09-0085-HSD Bulk 20
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    0085H Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    w19b320

    Abstract: No abstract text available
    Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


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    W19B320AT/B w19b320 PDF

    Asus MONITOR MOTHERBOARD CIRCUIT MANUAL

    Abstract: T2D 83 diode gp026 st GP025 82430TX 82371EB Asus PC MOTHERBOARD CIRCUIT schematic diode T75A Asus PC MOTHERBOARD CIRCUIT MANUAL 8272A floppy disk controller block diagram
    Text: PRELIMINARY DRAFT Intel Extended Temperature 82371EB PCI-TO-ISA/IDE Xcelerator PIIX4E Datasheet  Integrated 16 x 32-bit Buffer for IDE PCI Burst Transfers  Supports Glue-less “Swap-Bay” Option with Full Electrical Isolation Supported Kits for both Pentium and


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    82371EB 32-bit 82430TX 82440LX 82371EB CLK48 Asus MONITOR MOTHERBOARD CIRCUIT MANUAL T2D 83 diode gp026 st GP025 Asus PC MOTHERBOARD CIRCUIT schematic diode T75A Asus PC MOTHERBOARD CIRCUIT MANUAL 8272A floppy disk controller block diagram PDF

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


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    KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor PDF

    Realtek PCI LAN 8101L

    Abstract: 9346CR RTL8101L RTL8139 BootROM rt8101l lan card RTL8100 RTL8139A RTL8101L modem RTL810 8101L
    Text: RTL8101L 1. Features: 1.1 Ethernet Controller Features: wake-up when main power remains off Supports auxiliary power auto-detect, and sets the related capability of power management registers in PCI configuration space Includes a programmable PCI burst size and early Tx/Rx


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    RTL8101L 32-bit 93C46 16-bit MS-026 100LD 14x14x1 LQ100 Realtek PCI LAN 8101L 9346CR RTL8101L RTL8139 BootROM rt8101l lan card RTL8100 RTL8139A RTL8101L modem RTL810 8101L PDF

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


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    Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM PDF

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


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    S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00 PDF

    Untitled

    Abstract: No abstract text available
    Text: S29NS-R MirrorBit Flash Family S29NS01GR, S29NS512R, S29NS256R, S29NS128R 1024/512/256/128 Mb 64/32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory S29NS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Retired Product)


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    S29NS-R S29NS01GR, S29NS512R, S29NS256R, S29NS128R S29NS512P S29NS512R. S29VS256R S29VS128R PDF

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


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    K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX PDF

    29LV800

    Abstract: 29f016 29f400 29F040
    Text: Common Flash Interface Version 1.4 Vendor Specific Extensions Application Note Introduction This application note provides an overview of the changes implemented between versions 1.3 and 1.4 of the SpansionTM Flash memory Common Flash Interface CFI implementation.


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    PDF

    L323C

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile


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    Am29DL32xC 16-Bit) 29DL32xC L323C PDF

    Untitled

    Abstract: No abstract text available
    Text: DAC1653Q/DAC1658Q Quad 16-bit DAC: 10 Gbps JESD204B interface: x2, x4 and x8 interpolating Advance data sheet Revision 2.3.1 1. GENERAL DESCRIPTION DAC1653Q and DAC1658Q are high-speed, high-performance 16-bit quad channel Digital-to-Analog Converters DACs .


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    DAC1653Q/DAC1658Q 16-bit JESD204B DAC1653Q DAC1658Q DAC165xQ. DAC165xQ DAC1653Q; PDF

    Untitled

    Abstract: No abstract text available
    Text: www.ti.com DW−20 TLV5639C TLV5639I PW−20 SLAS189C – MARCH 1999 – REVISED JANUARY 2004 2.7-V TO 5.5-V LOW-POWER 12-BIT DIGITAL-TO-ANALOG CONVERTERS WITH INTERNAL REFERENCE AND POWER DOWN FEATURES • • • • • • • DW OR PW PACKAGE TOP VIEW


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    DW-20 PW-20 TLV5639C TLV5639I SLAS189C 12-BIT TMS320 PDF

    R14 P1F

    Abstract: N-333 PP7F 1BE3 P53 transistor A1-U1-U17-A17 3LH30 zz12
    Text: TOSHIBA Original CMOS 32-Bit Microcontroller TLCS-900/H1 Series TMP92CF26AXBG Semiconductor Company Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, “Points of Note and Restrictions”. TMP92CF26A


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    32-Bit TLCS-900/H1 TMP92CF26AXBG TMP92CF26A TMP92CF26AXBG TMP92CF26A 228-pin R14 P1F N-333 PP7F 1BE3 P53 transistor A1-U1-U17-A17 3LH30 zz12 PDF

    740-0007

    Abstract: EN29GL064 6A000
    Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and


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    EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000 PDF

    82378ib

    Abstract: No abstract text available
    Text: A P M Ä M ! DM iP© I^[ìfflA'irD@ N] in te i 82378IB SYSTEM I/O SIO Provides the Bridge Between the PCI Bus and ISA Bus Arbitration for PCI Devices — Four PCI Masters are Supported — Fixed, Rotating, or a Combination of the Two 100% PCI and ISA Compatible


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    82378IB IOCS16# MEMCS16# 82378ib PDF

    REJ09B0324-0200

    Abstract: PLQP0064KB-A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PTLG0064JA-A 64F0G) REJ09B0324-0200 REJ09B0324-0200 PLQP0064KB-A PDF

    KFG2G16Q2A

    Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
    Text: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    KFG2G16Q2A-DEBx) KFH4G16Q2A-DEBx) KFG2G16Q2A KFH4G16Q2A 80x11 KFG2G16Q2A) KFH4G16Q2A) KFG2G16Q2A 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash PDF

    TRANSISTOR SMD kl3

    Abstract: P-LSSOP20-4 fra4 transistor bc 549
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    FMR27 R8C/32C REJ09B0573-0100 TRANSISTOR SMD kl3 P-LSSOP20-4 fra4 transistor bc 549 PDF

    M3062

    Abstract: TA2140 csc 2313 m3062lfgpgp u3
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    M16C/62P M16C/62P, M16C/62PT) REJ09B0185-0241 M3062 TA2140 csc 2313 m3062lfgpgp u3 PDF

    ba37

    Abstract: 48FBGA K8D1716U K8D1716UBC K8D1716UTC samsung nor flash BA251
    Text: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary


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    K8D1716UTC K8D1716UBC 48TSOP1 48FBGA 047MAX 48-Ball ba37 K8D1716U K8D1716UBC samsung nor flash BA251 PDF

    SA-275

    Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
    Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document


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    Am29PDL129H S29PL129J Am29PDL129J SA-275 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G PDF

    ink cartridge chip

    Abstract: AEC-Q100 DS2431 DS2431-A1 DS2431P DS2431X DS2480B P1451 polynomial TSOC 6
    Text: 19-4675; Rev 10; 3/11 1024-Bit, 1-Wire EEPROM The DS2431 is a 1024-bit, 1-Wire EEPROM chip organized as four memory pages of 256 bits each. Data is written to an 8-byte scratchpad, verified, and then copied to the EEPROM memory. As a special feature, the


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    1024-Bit, DS2431 64-bit ink cartridge chip AEC-Q100 DS2431-A1 DS2431P DS2431X DS2480B P1451 polynomial TSOC 6 PDF

    63FBGA

    Abstract: KFG1G16Q2B onenand
    Text: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    KFG1G16Q2B-DEBx) KFG1G16Q2B 80x11 KFG1G16x2B) 63FBGA KFG1G16Q2B onenand PDF

    h-12-H

    Abstract: SDA28 REJ09B0001 2CM06 DTC 304-2 user manual
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    R8C/32A R8C/33A h-12-H SDA28 REJ09B0001 2CM06 DTC 304-2 user manual PDF