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    1300 laser diode rise time

    Abstract: Indium Gallium Arsenide Phosphide lasers 502CQF indium gallium arsenide phosphide OC45K laser 477 Semiconductor Laser International data by 476 diode 1300 nm Laser 40 mW diode 476 k
    Text: N AMER PHILIPS/DISCRETE a?D bbSBT31 00CH733 0 D r D EV ELO PM EN T DATA This data shget contains advance information and specifications are subject to change w ithout notice. T-41-07 502CQF BURIED HETEROJUNCTION InGaAsP LASER DIODE WITH FIBRE PIGTAIL The 502C Q F is an InGaAsP buried heterojunction semiconductor laser diode. The device is designed


    OCR Scan     		PDF 502CQF OT-184 1300 laser diode rise time Indium Gallium Arsenide Phosphide lasers indium gallium arsenide phosphide OC45K laser 477 Semiconductor Laser International data by 476 diode 1300 nm Laser 40 mW diode 476 k

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    Abstract: No abstract text available
    Text: AT24C01A/02/04/08/16 Features • Low Voltage and Standard Voltage Operation 5.0 Vcc = 4.5V to 5.5V 2.7 (Vcc = 2.7V to 5.5V) 2.5 (Vcc = 2.5V to 5.5V) 1.8 (Vcc = 1.8V to 5.5V) Internally Organized 128 x 8 (1K), 256 x 8 (2K), 512 x 8 (4K), 1024 X 8 (8K) or 2048 X 8 (16K)


    OCR Scan     		PDF AT24C01A/02/04/08/16 16-Byte 14-Pin AT24C16N-10SC-1 AT24C16-10SC-1 AT24C16-10PI-1 AT24C16N-10SI-1 AT24C16-10SI-1