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    00MB2 Search Results

    00MB2 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    DS100MB201SQE/NOPB Texas Instruments Dual Lane 2:1/1:2 Mux/Buffer with Equalization 54-WQFN -40 to 85 Visit Texas Instruments Buy
    DS100MB201SQ/NOPB Texas Instruments Dual Lane 2:1/1:2 Mux/Buffer with Equalization 54-WQFN -40 to 85 Visit Texas Instruments Buy
    DS100MB203SQE/NOPB Texas Instruments 10.3-Gbps dual-port mux & fanout buffer 54-WQFN -40 to 85 Visit Texas Instruments Buy
    DS100MB203SQ/NOPB Texas Instruments 10.3-Gbps dual-port mux & fanout buffer 54-WQFN -40 to 85 Visit Texas Instruments Buy
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    00MB2 Price and Stock

    Texas Instruments DS100MB203SQ-NOPB

    IC MUX 2:1 54WQFN
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    DigiKey DS100MB203SQ-NOPB Cut Tape 1,372 1
    • 1 $20.24
    • 10 $16.159
    • 100 $14.0195
    • 1000 $13.1636
    • 10000 $13.1636
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    DS100MB203SQ-NOPB Digi-Reel 1,372 1
    • 1 $20.24
    • 10 $16.159
    • 100 $14.0195
    • 1000 $13.1636
    • 10000 $13.1636
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    KEMET Corporation PEH200PJ5100MB2

    CAP ALUM 10000UF 20% 100V SCREW
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    DigiKey PEH200PJ5100MB2 Bulk 91 1
    • 1 $60.35
    • 10 $60.35
    • 100 $60.35
    • 1000 $39.39167
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    Mouser Electronics PEH200PJ5100MB2 88
    • 1 $56.19
    • 10 $43.72
    • 100 $40.47
    • 1000 $39.39
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    Richardson RFPD PEH200PJ5100MB2 1
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    Avnet Abacus PEH200PJ5100MB2 31 Weeks 96
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    KEMET Corporation PEH200YK4100MB2

    CAP ALUM SCRW TERM 85C
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    DigiKey PEH200YK4100MB2 Box 91 1
    • 1 $68.54
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    • 100 $68.54
    • 1000 $45.29542
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    Avnet Abacus PEH200YK4100MB2 31 Weeks 96
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    KEMET Corporation PEH200KB5100MB2

    CAP ALUM 10000UF 20% 40V SCREW
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    DigiKey PEH200KB5100MB2 Bulk 75 1
    • 1 $17.62
    • 10 $16.327
    • 100 $16.327
    • 1000 $16.327
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    Mouser Electronics PEH200KB5100MB2 90
    • 1 $17.62
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    • 100 $16.32
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    Newark PEH200KB5100MB2 Bulk 76 1
    • 1 $18.32
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    RS PEH200KB5100MB2 Bulk 1
    • 1 $21.14
    • 10 $19.02
    • 100 $17.97
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    Avnet Abacus PEH200KB5100MB2 31 Weeks 100
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    Texas Instruments DS100MB203EVK-NOPB

    EVAL BOARD FOR DS100MB203
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    DigiKey DS100MB203EVK-NOPB Box 2 1
    • 1 $550.9
    • 10 $550.9
    • 100 $550.9
    • 1000 $550.9
    • 10000 $550.9
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    00MB2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Schematics AL 1450 DV

    Abstract: ixc 844 schematic diagram welding inverter STP5N80 845 diode DC/AC to DC smps circuit diagram schematic diagram dc-ac inverter schematic diagram dc-ac welding inverter CIRCUIT STP5N80FI RC50
    Text: _ • 7^2^237 00Mb2öl « V# _ BiSGTH S C S -T H O M S O N [*^ Q [E[L gTi»«S STP5N80 STP5N80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V STP5N80 S TP5N 80FI ■ . . . . ■ . dss 800 V 800 V RDS(on) Id < 2 0 < 2 n 5 .5 A


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    PDF STP5N80 STP5N80FI STP5N80 STP5N80FI 004b5B7 STP5N80/FI Schematics AL 1450 DV ixc 844 schematic diagram welding inverter 845 diode DC/AC to DC smps circuit diagram schematic diagram dc-ac inverter schematic diagram dc-ac welding inverter CIRCUIT RC50

    BYX39 400

    Abstract: BYX39 BYX39-1400 BYX39-1400R BYX39-600 BYX39-600R IEC134
    Text: BYX39 SERIES r-ûi-\z_ - PHILIPS INT ERNATIONAL 5 L jE 711002b 0Dmb2G D IPHIN CONTROLLED AVALANCHE RECTIFIER DIODES Also available to BS9333—F005 Silicon diodes in a DO—4 metal envelope, capable of absorbing transients and Intended for use in power rectifier application.


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    PDF 711002b BYX39 BS9333â BYX39-600 BYX39-1400. BYX39-600R BYX39-1400R. BYX39- BYX39 400 BYX39-1400 BYX39-1400R IEC134

    4N 26 TFK

    Abstract: No abstract text available
    Text: T O S H IB A TH MY7216E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216E1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.


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    PDF MY7216E1 BEG-80 216-WORD 72-BIT THMY7216E1BEG TC59S6408BFT 72-bit 4N 26 TFK

    CSR86

    Abstract: EEPROM AMD 705
    Text: PRELIMINARY & Am79C961 PCnet -ISA+Jumperless Single-Chip Ethernet Controller for ISA Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Single-chip Ethernet co n tro lle r fo r the Industry Standard A rchitecture ISA and Extended Industry Standard A rchitecture (EISA) buses


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    PDF Am79C961 Am7990 CSR15 G2S7S25 PQB132 2001OA CSR86 EEPROM AMD 705

    PicoGate

    Abstract: No abstract text available
    Text: i V I D 3.3V CMOS SINGLE BUS BUFFER GATE W ITH 3-STATE O UTPUT AND 5 VOLT TOLERANT I/O T FEA TU RES: - IDT74LVC1G126A D E S C R IP T IO N : 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 0.65mm pitch PSOP package


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    PDF IDT74L 1G126A MIL-STD-883, 200pF, LVC1G126A: IDT74LVC1G79A. IDT74ALVC1G04. 04b27Ã PicoGate

    CA3130

    Abstract: pin diagram of IC ca3130 IC1 CA3130 CA3130A CA3130AS CA3130T IC CA3130 application pin diagram of ca3130 IC1 CA3130 CURRENT TO VOLTAGE CONVERTER 200-microampere
    Text: H A R R IS SE H IC O N D ff H A R b lE SECTOR R I M3Q5S71 D TflM IHAS CA3130 S SEMICONDUCTOR BiMOS Operational Amplifier with MOSFET Input/CMOS Output April 1993 Features • 004bE77 Description MOSFET Input Stage Provides: - Very High Z| * 1.5 TO 1 3 x 1012fi) lyp .


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    PDF M3Q2S71 004b277 1012Q) CA3130, CA3130A 100kHz AN66M CAJ130 Po-150mW CA3600E) CA3130 pin diagram of IC ca3130 IC1 CA3130 CA3130AS CA3130T IC CA3130 application pin diagram of ca3130 IC1 CA3130 CURRENT TO VOLTAGE CONVERTER 200-microampere

    THMY7280F1BEG-80

    Abstract: TC59S6408BFT THMY7280F1BBG CS13X OA54
    Text: TOSHIBA THMY7280F1 BEG-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 8,388,6O8-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7280F1BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFT DRAMs and an unbufler on a printed circuit board.


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    PDF THMY7280F1BEG-80 608-WORD 72-BIT THMY7280F1BBG TC59S6408BFT 168-pin PC100 THMY7280F1BEG-80 CS13X OA54

    STP5N80

    Abstract: No abstract text available
    Text: 7 ^ 2 ^ 2 3 7 0 0 M b 2 ö l b?M • S G T H _ SGS-THOMSON STP5N80 STP5N80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STP5N 80 STP5N80FI ■ . ■ . . ■ ■ V d ss RDS on Id 800 V 800 V <20 < 2 i! 5.5 A 3.1 A TYPICAL RDS(on) = 1.65 £2


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    PDF STP5N80 STP5N80FI STP5N80/FI STP5N80

    Untitled

    Abstract: No abstract text available
    Text: Sept. 1995 Edition 1.0a '- FUJITSU DATA SHEET ' MB1503 LOW-POWER PLL FREQUENCY SYNTHESIZER WITH POWER SAVE FUNCTION 1.1GHz The Fujitsu MB1503 is a serial input phase-locked loop (PLL) frequency synthesizer with a pulse-swallow function. A stand-by mode is provided to limit power consumption during


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    PDF MB1503 MB1503 16-bit 15-bit 14-bit 19-bit 18-bit F16015S-2C

    Untitled

    Abstract: No abstract text available
    Text: C ««vuHnai — • H YM 7 V6 4100 B Q -S E R IE S SO DIMM 1Mx64 bit SDRAM MODULE based on 1Mx16 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64100B is high speed 3.3Volt synchronous dynamic RAM module consisting of four 1Mx16 bit Synchronous DRAMs in 50-pin SOJ or TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glassepoxy circuit board. Two 0.22|j.F and two 0.0022|iF decoupling capacitors are mounted for each SDRAM.


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    PDF 1Mx64 1Mx16 HYM7V64100B 50-pin 168-pin 1Mn16