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    0118J Price and Stock

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    Amphenol Corporation ALBFLB3E180118J

    ALBFLB3E180118J - Bulk (Alt: ALBFLB3E180118J)
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    Avnet Americas ALBFLB3E180118J Bulk 50
    • 1 -
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    • 100 $87.33993
    • 1000 $69.443
    • 10000 $69.443
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    Mouser Electronics ALBFLB3E180118J
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    • 100 $97.62
    • 1000 $97.62
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    Daniels Manufacturing Corporation (DMC) C10-118JA

    Cable Mounting & Accessories SAFE-T-CABLE KIT .022X18" /W JUMPER ASSY
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    Mouser Electronics C10-118JA
    • 1 $5.59
    • 10 $5.28
    • 100 $3.68
    • 1000 $3.67
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    Daniels Manufacturing Corporation (DMC) C10-118JAPKG

    Cable Mounting & Accessories SAFE-T-CABLE .022X18" KIT/w JUMPER ASSBY
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    Mouser Electronics C10-118JAPKG
    • 1 $217.71
    • 10 $205.64
    • 100 $205.64
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    Daniels Manufacturing Corporation (DMC) A10-118JA

    Cable Mounting & Accessories SAFE-T-CABLE ASSEMBLY .022X18" w/JUMPER
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    Mouser Electronics A10-118JA
    • 1 $4.6
    • 10 $4.34
    • 100 $3.03
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    • 10000 $3.03
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    Daniels Manufacturing Corporation (DMC) C10-118JAEA

    Cable Mounting & Accessories SAFE-T-CABLE KIT .022X18" W/ JUMP & AE
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    Mouser Electronics C10-118JAEA
    • 1 $5.25
    • 10 $4.96
    • 100 $3.45
    • 1000 $3.45
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    0118J Datasheets Context Search

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    OHRD1938

    Abstract: No abstract text available
    Text: GaAs-IR-Lumineszenzdiode 950 nm GaAs Infrared Emitter (950 nm) F 0118J Wesentliche Merkmale Features 2 • • • • • Chip size 300 x 300 µm2 Very highly efficient GaAlAs LED High reliability High pulse handling capability Good spectral match to silicon


    Original     		0118J OHRD1938 PDF

    0118J

    Abstract: osram topled
    Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, 300 µm Kantenlänge GaAs Infrared Emitting Diode(950 nm, 12 mil) F 0118J Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 22 mW @ 100 mA im Topled Gehäuse. • Chipgröße 300 x 300 µm2


    Original     		0118J 0118J osram topled PDF

    GCOY6878

    Abstract: No abstract text available
    Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, Enhanced Power GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118J Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 24 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 300 x 300 µm2


    Original     		0118J GCOY6878 PDF