C-Cube decoder
Abstract: MPEG-1 Encoder
Text: DVXPERT 5120/5140 MPEG VIDEO CODECS FOR BROADCAST-QUALITY INTERACTIVE VIDEO NETWORKING AND COMMUNICATION APPLICATIONS The DVxpert 5120 Video Networking codec from C-Cube Microsystems is the industry’s first full-duplex, real-time, MPEG-2 codec engine. It is specifically designed to meet the quality and performance requirements of today’s latency-sensitive
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DVxpert5120
C-Cube decoder
MPEG-1 Encoder
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intel asm-96
Abstract: AP-483 sinusoidal ac waveform 4 phase stepper motor 1F42 diode wg 4 WG 130 8XC196MC 272181 PTS93
Text: AP-483 APPLICATION NOTE Application Examples Using the 8XC196MC MD Microcontroller MASANORI DOI GARY HARRIS EMBEDDED CONTROL August 1993 Order Number 272282-001 Information in this document is provided in connection with Intel products No license express or implied by estoppel or
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AP-483
8XC196MC
intel asm-96
AP-483
sinusoidal ac waveform
4 phase stepper motor
1F42
diode wg
4 WG 130
272181
PTS93
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A42 BF 331
Abstract: No abstract text available
Text: 12345634789A6BC 1DE48F75ECF34E87C2345C7D5E C9A A2 E 3F374C2!CC9"C#$%& 'EF34EC C12B9 6C2!C#$%# F 3 !" FB 5# 1 333B9D7$936B62 'B 2AB9 3 !" 3
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12345634789A6BC
1DE48F75
ECF34
C2345
3F374C2
C12B9
12234567893A758BCD834E3F2
367D3
333B9D7
367D37D(
A42 BF 331
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CD Mode
Abstract: 7476 counter 80C152 270645 AN 429 C082 johnson controls 80C51BH C152 embedded controller handbook
Text: AP-429 APPLICATION NOTE Application Techniques for the 83C152 Global Serial Channel in CSMA CD Mode BOB JOHNSON Embedded Control Applications Engineering May 1989 Order Number 270720-001 Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or copyright for sale and use of Intel products except as provided in
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AP-429
83C152
CD Mode
7476 counter
80C152
270645
AN 429
C082
johnson controls
80C51BH
C152
embedded controller handbook
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Untitled
Abstract: No abstract text available
Text: Tem ic 2N6851 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) -200 TDS(on) (ß ) 0.80 I d (A) -4.0 Parametric limits in accordance with M1L-S-19500I564 where applicable. T 0-205A F (TO-39) Ô D P-Channel MOSFF.T Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)
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2N6851
M1L-S-19500I564
1503C)
P-37010--
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Untitled
Abstract: No abstract text available
Text: Temic Siliconix_YP0808B/L/M, YP1008B/L/M P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number rDS on Max (Q) V(BR)DSS Min (V) VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M 5 @ V GS= 5 @ V GS= 5 @ V Gs = 5 @ V Gs = 5 @ V Gs = 5 @ V Gs =
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YP0808B/L/M,
YP1008B/L/M
VP0808B
VP0808L
VP0808M
VP1008B
VP1008L
VP1008M
O-226AA)
P-37655--
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RCA 40408
Abstract: RCA-40406 rca 40411 40408 rca 40407 npn 40411 rca 40406 40406 40411 224Z
Text: Power Transistors File Number 40406, 40407, 40408, 40411 219 HARRIS SEMICOND SECTOR S?E D • M30S271 GG2Q103 5 H H A S T E R M IN A L D E S IG N A T IO N S Silicon N-P-N and P-N-P Power Transistors For A udio-A m plifier Applications Features: 40406 & 40407
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M30S271
GG2Q103
RCA-40406,
15tput
M3D2271
002D107
RCA 40408
RCA-40406
rca 40411
40408
rca 40407
npn 40411
rca 40406
40406
40411
224Z
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Untitled
Abstract: No abstract text available
Text: B u lle tin 12037 Internatiçnal E S Rectifier 4 sl R , 1 s e r ie s sok / l / k s (R) STANDARD RECOVERY DIODES Stud Version Features 150 A • Alloy diode ■ High current carrying capability ■ High voltage ratings up to 1000V ■ High surge current capabilities
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Radiall R191 327
Abstract: No abstract text available
Text: TECHNICAL DATA Page 1 I 1 R191.405.500 BNC FEMALE - TNC MALE PUSH-ON STRAIGHT ADAPTER ADAPT s e rie s 0 1 4. 5 St r a i g h t knurled m olatage droit -C L. rin •* o in < ■s. n ■Q" 1.287 32.7 50 NOMINAL IMPEDANCE FREQUENCY RANSE 0-4 TEMPERATURE RATING
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DS100
Abstract: RFL4N12
Text: RFL4N12 RFL4N15 33 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u st 1991 Package Features T O -2 0 5 A F • 4A, 120V and 150V • ros on = 0 .4 ft • SOA is Power-Dissipation Limited GATE SOURCE • Nanosecond Switching Speeds
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RFL4N12
RFL4N15
RFL4N15
RFL4N12,
92CS-34362RI
AN-7260
DS100
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1N3293R
Abstract: 1N3289 1N3289R 1N3291 1N3291R 1N3293 1N3294 1N3294R 1N3295 1N3295R
Text: Military Silicon Power Rectifier Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S - - - - 1.040 1.060 1.166 4.65 .640 .233 .745 .373 .286 .670 .850 .120 26.6 7 2 6.92 29.61 118.11 16.25 5.66 18.92 9.47
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D0205AA
1N3289
1N3289R
1N3291
1N3291R
1N3293
1N3293R
1N3294
1N3294R
1N3295
1N3295R
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1N2063
Abstract: 1N1671 1N404 1N4047 1n*049 LN2054 1N1660 1N1661 1N1670 1N3260
Text: Silicon Power Rectifier 1N4044—1N4056 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S Notes: 1. Full threads within 2—1 /2 threads 2. Standard polarity: Stud is Cathode Reverse polarity: Stud is Anode 1N1660 1N1661 1N1662
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1N4044â
1N4056
D0205AB
1N4044
1N1660
1N1670
1N2054
1N3260
1N4045
1N1661
1N2063
1N1671
1N404
1N4047
1n*049
LN2054
1N3260
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2N6898
Abstract: 2N6897 36485 2N6798 TRANSISTOR C 557 B 2n6800 2N6901 IDM30 2N6904 qpl-19500
Text: Standard Power M O SFETs File Number 1875 2N6897 Power M O S Field-Effect Transistors P-Channei Enhancement-Mode Power M O S Field-Effect Transistors 12 A, 100 V ros on : 0.3 0 TERMINAL DIAGRAM 3 o Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds
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2N6897
2N6897
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6898
36485
2N6798
TRANSISTOR C 557 B
2N6901
IDM30
2N6904
qpl-19500
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Bulletin
Abstract: No abstract text available
Text: Bulletin 12037 lite m a tio n a l [kw] Rectifier s e r ie s 45L R , is o k /l /ks(R) STANDARD RECOVERY DIODES Stud Version Features • 1 5 0 A Alloy diode ■ High current carrying capability ■ High voltage ratings up to 1 0 00V ■ High surge current capabilities
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4433 mosfet
Abstract: 4435 mosfet mosfet 4433 AALN IRFF131
Text: 2 HARRIS IR FF1 30/131/132/133 IR F F 1 3 0 R /1 31 R /1 3 2 R /1 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A ugust 1991 Features • Package 0205A F 7 .0 A a n d 8 .0 A , 8 0 V - 1 0 0 V • r D S (o n = 0 . 1 8 f t a n d 0 .2 5 f t • S in g le P u lse A v a la n c h e E n e rg y R a te d *
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T0205A
IRFF130,
IRFF131,
IRFF132,
IRFF133
IRFF130R,
IRFF131R,
IRFF132R,
IRFF133R
8REAK00WN
4433 mosfet
4435 mosfet
mosfet 4433
AALN
IRFF131
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250M
Abstract: IRFF220 IRFF221 IRFF222 IRFF223 T4 sm diode PD937
Text: HE 0 I MaSSMSZ 0GQT37Q Ö | Data Shçet No. PD-9.378E INTERNATIONAL R E C T I F I E R ' 7 -3 Ÿ -O Ÿ INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IOR IRFF220 IRFF221 IM-CHAIMIMEL POWER MOSFETs TQ-39 PACKAGE IRFFSSS IRFFSS3 Features: 200 Volt, 0.8 Ohm HEXFET
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G-352
250M
IRFF220
IRFF221
IRFF222
IRFF223
T4 sm diode
PD937
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TRANSISTOR Y1D
Abstract: 2N3924 2n3924 equivalent
Text: MOTOROLA SC XSTRS/R b3b7554 00^403(3 3 •H0Tb MbE D F ^ MOTOROLA ■i SEM ICONDUCTOR i TECHNICAL DATA 3 3 -0 5 2N3924 The R F Lin e NPN SILICON RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . optim ized A n n u la r tra n sisto r fo r larg e-sig n al pow eram p lifier and d riv e r ap p licatio n s to 300 MHz.
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b3b7554
2N3924
TRANSISTOR Y1D
2N3924
2n3924 equivalent
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA Paga H2 I 1 R191.976.020 SilA FEMALE - R-MCX FEMALE STRAIGHT ADAPTER RACK.100 0.236 1 ADAPT series f 1a t 5 19.5) 50 NOMINAL IMPEDANCE 0-2 FREQUENCY RANEE -B5/+1S5 TEMPERATURE RATING 1-10 + V.S.W.R GHz 'C X F GHz)Hax i 0.05 RF INSERTJON LOSS
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0205A01
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OF IC 7270
Abstract: No abstract text available
Text: Bulletin 12082/A International S Rectifier SD400N/R SERIES Stud Version STANDARD RECOVERY DIODES Features W id e c u rre n t range H igh v o lta g e ra tin g s up to 2 4 0 0 V H igh s u rg e c u rre n t c a p a b ilitie s S tud c a th o d e a n d s tu d a n o d e v e rs io n
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12082/A
SD400N/R
-401O
0100s
OF IC 7270
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Untitled
Abstract: No abstract text available
Text: Bulletin 12019 lb. International SRectffier 130HF R s e rie s STANDARD RECOVERY DIODES Stud Version 130 A Features • H ig h c u rre n t c a rry in g c a p a b ility ■ H ig h s u rg e c u rre n t c a p a b ility ■ T y p e s up to 1 2 0 0 V V RBU ■
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130HF
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2N06
Abstract: No abstract text available
Text: 2 3 H a r r i s F L 2 N 0 5 R F L 2 N 0 6 N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u s t 1991 Features • R Package 2A, 50V and 60V T O -20 5 A F • RDS on = 0 .9 5 n • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds
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RFL2N05
RFL2N06
gate-drlv60
92CS-37I04
2N06
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Untitled
Abstract: No abstract text available
Text: 4 3 0 5 2 7 1 □ □ 5 4 5 ci? tBT • H a r r is HAS IR F F 9120, IR F F 9121 IR F F 9122, IR F F 9123 Avalanche Energy Rated P-Channel Power MOSFETs January 1994 Features Package T 0 -2 0 5 A F • -3.5 A and -4A , -8 0 V and -1 0 0 V BOTTOM VIEW • rDS ON = o .e o n and 0.80 H
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IRFF9120,
IRFF9121,
IRFF9122
IRFF9123
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D634
Abstract: No abstract text available
Text: Bulletin 12065/A International SRectifier SD253N/R SERIES Stud Version FAST RECOVERY DIODES Features • High power FAST recovery diode series ■ 1.5 to 2.0 |js recovery time ■ High voltage ratings up to 1600V ■ High current capability ■ Optimized turn on and turn off characteristics
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12065/A
SD253N/R
00273T4
D634
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ic 4588
Abstract: No abstract text available
Text: 2 RFL1N08 RFL1N10 h a r r is N -C h a n n e l E n h an ce m e n t-M o d e Pow er F ie ld -E ffe c t Transistors August 1991 Package F e a tu re s T O -2 0 5 A F • 1A, 80 V and 100V • RD S on = 1 -2 f i • S O A is P ow er-D issip atio n Limited • N anosecond Switching S peeds
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RFL1N08
RFL1N10
RFL1N10
ic 4588
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