Untitled
Abstract: No abstract text available
Text: VN820-E High-side driver Datasheet − production data Features Type RDS on VN820-E VN820SP-E VN820B5-E VN820PT-E VN820-12-E VN820-11-E IOUT 10 VCC 1 PowerSO-10 40 mΩ 9A 36 V • ECOPACK : lead free and RoHS compliant ■ Automotive Grade: compliance with AEC
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VN820-E
VN820-E
VN820SP-E
VN820B5-E
VN820PT-E
VN820-12-E
VN820-11-E
PowerSO-10
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6942
Abstract: No abstract text available
Text: VN750 High-side driver Datasheet − production data Features Type VN750 VN750S VN750PT VN750-B5 RDS on IOUT VCC SO-8 60 mΩ 6A PENTAWATT 36 V • CMOS compatible input ■ On-state open-load detection ■ Off-state open-load detection ■ Shorted load protection
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VN750
VN750
VN750S
VN750PT
VN750-B5
6942
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PDF
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Untitled
Abstract: No abstract text available
Text: VND810PEP-E Double channel high-side driver Features Type RDS on IOUT VCC VND810PEP-E 160mW(1) 3.5A(1) 36V 1. Per each channel. PowerSSO-12 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection
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VND810PEP-E
160mW
PowerSSO-12
2002/95/EC
VND810PEP-E
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PDF
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Untitled
Abstract: No abstract text available
Text: VNQ810PEP-E Quad channel high side driver Features Type RDS on IOUT VCC VNQ830PEP-E 160 m(1) 5 A(1) 36 V 1. Per each channel. PowerSSO-24 •CMOS compatible inputs Description •Open Drain status outputs •On-state open load detection The VND810PEP-E is a monolithic device made
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VNQ810PEP-E
VNQ830PEP-E
PowerSSO-24
VND810PEP-E
VNQ810PEP-E
ISO7637
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PDF
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JESD97
Abstract: LIS3L02AL LIS3L02ALTR
Text: LIS3L02AL MEMS INERTIAL SENSOR: 3-axis - +/-2g ultracompact linear accelerometer Features • 2.4V to 3.6V single supply operation ■ Low power consumption ■ ±2g full-scale ■ 0.5mg resolution over 100hz bandwidth ■ Embedded self test ■ Output voltage, offset and sensitivity
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LIS3L02AL
100hz
LIS3L02AL
JESD97
LIS3L02ALTR
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PDF
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STTH3002W
Abstract: STTH 150 60 PI STTH3002 STTH3002G STTH3002G-TR STTH3002PI
Text: STTH3002 Ultrafast recovery diode Main product characteristics IF AV 30 A VRRM 200 V Tj (max) 175° C VF (typ) 0.77 V trr (typ) 22 ns A Features and benefits • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery time
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STTH3002
STTH3002PI
DO-247
STTH3002W
STTH3002
DO-247,
STTH30and
STTH3002W
STTH 150 60 PI
STTH3002G
STTH3002G-TR
STTH3002PI
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Untitled
Abstract: No abstract text available
Text: VNQ810 Quad channel high side driver Features Type RDS on IOUT VCC VNQ810 160mΩ(1) 3.5A(1) 36V ) s ( ct 1. Per each channel. u d o SO-28 (double island) • CMOS compatible inputs ■ Open Drain status outputs ■ On state open load detection ■ Off state open load detection
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VNQ810
SO-28
VNQ810
VND810
DocID7387
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PDF
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Untitled
Abstract: No abstract text available
Text: VND830 Double channel high-side driver Features Type RDS on IOUT VCC VND830 60mΩ(1) 6A(1) 36V ) s ( ct 1. Per each channel. u d o SO-16L • CMOS compatible inputs ■ Open Drain status outputs ■ On-state open load detection Description ■ Off-state open load detection
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VND830
SO-16L
VND830
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PDF
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vnd830 package information
Abstract: VNQ830PTR-E ISO7637 VND830-E VNQ830P-E
Text: VNQ830P-E Quad channel high-side driver Features Type RDS on IOUT VCC VNQ830P-E 65 mΩ(1) 6A 36 V 1. Per each channel. • ECOPACK : lead free and RoHS compliant ■ Automotive Grade: compliance with AEC guidelines ■ Very low standby current ■ CMOS compatible input
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VNQ830P-E
SO-28
VNQ830P-E
VND830P-E
vnd830 package information
VNQ830PTR-E
ISO7637
VND830-E
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PDF
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Untitled
Abstract: No abstract text available
Text: VND670SP Dual high-side switch with dual Power MOSFET gate driver bridge configuration Features Type RDS(on) IOUT VCC VND670SP 30mΩ(1) 15A(1) 40V ) s ( ct 10 1. Per each channel. 1 u d o PowerSO-10 • 5V logic level compatible inputs ■ Gate drive for two external power MOSFET
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VND670SP
PowerSO-10
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Untitled
Abstract: No abstract text available
Text: VN750 High-side driver Datasheet − production data Features Type RDS on IOUT VCC 60 mΩ 6A u d o CMOS compatible input • On-state open-load detection ■ Off-state open-load detection ■ Shorted load protection ■ Undervoltage and overvoltage shutdown
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VN750
VN750S
VN750PT
VN750-B5
VN750
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STTH2002G
Abstract: No abstract text available
Text: STTH2002 Ultrafast recovery diode Features K A • Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ Reduces switching and conduction losses ■ High Tj ■ Insulating voltage: 2500 V rms ■ Capacitance: 7 pF K A A K Description K
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STTH2002
O-220AC
STTH2002D
O-220AC
O-220AC,
O-220ACins
STTH2002DI
STTH2002G
STTH2002G
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do-201 footprint
Abstract: STTH4R02 STTH4R02B STTH4R02D STTH4R02FP STTH4R02S STTH4R02U transistor p2w 4r2s
Text: STTH4R02 Ultrafast recovery diode Features A • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature K K A A K K TO-220AC STTH4R02D Description The STTH4R02 uses ST's new 200 V planar Pt
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STTH4R02
O-220AC
STTH4R02D
STTH4R02
O-220FPAC
STTH4R02FP
O-220AC,
O-220FPAC,
DO-201AB,
STTH4R02B
do-201 footprint
STTH4R02B
STTH4R02D
STTH4R02FP
STTH4R02S
STTH4R02U
transistor p2w
4r2s
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IEC1131
Abstract: ISO7637 VN800PT VN800PT13TR VN800S VN800S13TR
Text: VN800S VN800PT High-side driver Features Type RDS on IOUT VCC VN800S VN800PT 135 mΩ 0.7 A 36 V • CMOS-compatible input ■ Thermal shutdown ■ Current limitation ■ Shorted load protection ■ Under-voltage and over-voltage shutdown ■ Protection against loss of ground
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VN800S
VN800PT
VN800S
VN800PT
ISO7637
IEC1131
VN800PT13TR
VN800S13TR
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Untitled
Abstract: No abstract text available
Text: VND810SP Double channel high-side driver Features Type RDS on IOUT VCC VND810SP 160 mΩ(1) 3.5 A(1) 36 V 10 1. Per each channel. 1 PowerSO-10 • Very low standby current ■ CMOS compatible input ■ On-state open-load detection ■ Off-state open-load detection
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VND810SP
PowerSO-10
VND810SP
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PDF
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Untitled
Abstract: No abstract text available
Text: VN920 Single channel high-side solid-state relay Features Type RDS on IOUT VCC VN920 VN920-B5 VN920SO 16 mΩ 30 A 36 V P2PAK PENTAWATT • CMOS compatible input ■ Proportional load current sense ■ Shorted load protection ■ Under-voltage and over-voltage shutdown
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VN920
VN920-B5
VN920SO
VN920
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PDF
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ISO7637
Abstract: VND810M VNQ810M VNQ810M13TR VNQ830M
Text: VNQ810M Quad channel high side driver Features Type RDS on IOUT VCC VNQ810M 150mΩ(1) 0.6A(1) 36V 1. Per each channel. • CMOS compatible inputs ■ Open Drain status outputs ■ On state open load detection ■ Off state open load detection ■ Shorted load protection
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VNQ810M
SO-28
VNQ810M
VND810M
VNQ830M
ISO7637
VNQ810M13TR
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PDF
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ISO7637
Abstract: VND830 VND83013TR
Text: VND830 Double channel high-side driver Features Type RDS on IOUT VCC VND830 60mΩ(1) 6A(1) 36V 1. Per each channel. SO-16L • CMOS compatible inputs ■ Open Drain status outputs ■ On-state open load detection Description ■ Off-state open load detection
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VND830
SO-16L
VND830
ISO7637
VND83013TR
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PDF
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VND920
Abstract: No abstract text available
Text: VND920 Double channel high-side solid-state relay Features Type RDS on VND920 16 mΩ IOUT (1) 35 A VCC 36 V 1. Per channel with all the output pins connected to the PCB. SO-28 (double island) • CMOS compatible input ■ Proportional load current sense ■
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VND920
SO-28
VND920
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Untitled
Abstract: No abstract text available
Text: VN920D-B5 VN920DSO High-side driver Features Type RDS on IOUT VCC VN920D-B5 VN920DSO 18 mΩ 30 A 36 V P2PAK • CMOS-compatible input ■ On-state open load detection ■ Off-state open load detection ■ Shorted load protection ■ Under-voltage and over-voltage shutdown
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VN920D-B5
VN920DSO
SO-16L
VN920D-B5
VN920DSO
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STTH2R02U
Abstract: No abstract text available
Text: STTH2R02 Ultrafast recovery diode Main product characteristics IF AV 2A VRRM 200 V Tj (max) 175° C VF (typ) 0.7 V trr (typ) 15 ns A K A Features and benefits • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times
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STTH2R02
DO-15
STTH2R02Q
STTH2R02
STTH2R02A
STTH2R02U
DO-15,
STTH2R02U
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PDF
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SMC/DOC-0000181564
Abstract: No abstract text available
Text: STTH4R02 Ultrafast recovery diode Features A • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature K K A A K K TO-220AC STTH4R02D Description The STTH4R02 uses ST's new 200 V planar Pt
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STTH4R02
O-220AC
STTH4R02D
STTH4R02
O-220FPAC
STTH4R02FP
O-220AC,
O-220FPAC,
DO-201AB,
STTH4R02B
SMC/DOC-0000181564
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PDF
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STTH802D
Abstract: No abstract text available
Text: STTH802 Ultrafast recovery diode Main product characteristics IF AV 8A VRRM 200 V Tj (max) 175° C VF (typ) 0.8 V trr (typ) 17 ns K A K A Features and benefits • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery time
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STTH802
O-220AC
STTH802D
O-220FPAC
STTH802FP
STTH802B
STTH802
STTH802G
O-220AC,
O-220FPAC,
STTH802D
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Untitled
Abstract: No abstract text available
Text: THIS £L DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R 1G H T S 20 LOC DIST R E V I SIONS FT RESERVED. . 7 5 0± . 0 I 5 LTR DESCRIPTION DATE DWN APVD R E V I S E D E C O - 06 - 0 1 0 3 2 2 03MAY2006
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COPYRIGHT20
ECO-06
ECO-09
MAY2003
IMAY2003
-2I378I
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