03LG POWER MOSFET Search Results

03LG POWER MOSFET Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

03LG POWER MOSFET Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
25P03L Abstract: 25p03lg 03lg 369D AN569 NTD25P03L NTD25P03L1 NTD25P03L1G NTD25P03LG NTD25P03LT4G Text: NTD25P03L Power MOSFET −25 Amp, −30 Volt Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast	Original	NTD25P03L NTD25P03L/D 25P03L 25p03lg 03lg 369D AN569 NTD25P03L NTD25P03L1 NTD25P03L1G NTD25P03LG NTD25P03LT4G	PDF
25p03lg Abstract: 03LG NTD25P03LT4G 25p03l NTD25P03LG 03LG Power MOSFET DPak Package size Text: NTD25P03L Power MOSFET −25 Amp, −30 Volt Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast	Original	NTD25P03L NTD25P03L/D 25p03lg 03LG NTD25P03LT4G 25p03l NTD25P03LG 03LG Power MOSFET DPak Package size	PDF
Untitled Abstract: No abstract text available Text: NTD25P03L Power MOSFET −25 Amp, −30 Volt Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast	Original	NTD25P03L NTD25P03L/D	PDF
STD25P03LT4G Abstract: dpak mosfet 25p03lg STD25P03L NTD25P03 Text: NTD25P03L, STD25P03L Power MOSFET −25 Amp, −30 Volt Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast	Original	NTD25P03L, STD25P03L AEC-Q101 NTD25P03L/D STD25P03LT4G dpak mosfet 25p03lg NTD25P03	PDF