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    03N60S5 Search Results

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    03N60S5 Price and Stock

    Rochester Electronics LLC SPB03N60S5

    N-CHANNEL POWER MOSFET
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    DigiKey SPB03N60S5 Bulk 670
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    Infineon Technologies AG SPN03N60S5

    MOSFET N-CH 600V 700MA SOT223-4
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    DigiKey SPN03N60S5 Reel 1,000
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    Bristol Electronics SPN03N60S5 1,550
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    ComSIT USA SPN03N60S5 515
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    Infineon Technologies AG SPU03N60S5BKMA1

    MOSFET N-CH 600V 3.2A TO251-3
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    EBV Elektronik SPU03N60S5BKMA1 21 Weeks 1
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    Infineon Technologies AG SPP03N60S5HKSA1

    MOSFET N-CH 600V 3.2A TO220-3
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    DigiKey SPP03N60S5HKSA1 Tube 500
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    Infineon Technologies AG SPD03N60S5BTMA1

    MOSFET N-CH 600V 3.2A TO252-3
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    DigiKey SPD03N60S5BTMA1 Reel
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    SPD03N60S5BTMA1 Digi-Reel 1
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    SPD03N60S5BTMA1 Cut Tape
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    Rochester Electronics SPD03N60S5BTMA1 13,093 1
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    Find more 03N60S5 price and stock on Findchips.com

    03N60S5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    03N60S5

    Abstract: Q67040-S4184 SPB03N60S5 SPP03N60S5
    Text: 03N60S5 03N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		PDF SPP03N60S5 SPB03N60S5 SPPx4N60S5/SPBx4N60S5 SPP03N60S5 P-TO220-3-1 P-TO263-3-2 03N60S5 Q67040-S4184 03N60S5 Q67040-S4184 SPB03N60S5

    03n60s5

    Abstract: 03n60 P-TO251-3-1 P-TO252 SPD03N60S5 SPU03N60S5
    Text: 03N60S5 03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 P-TO252 P-TO251-3-1 Q67040-S4227 03N60S5 03n60s5 03n60 P-TO251-3-1 P-TO252 SPD03N60S5 SPU03N60S5

    03n60s5

    Abstract: No abstract text available
    Text: 03N60S5 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 PG-TO252. PG-TO251. SPD03N60S5 Q67040-S4227 Q67040-S4187 03n60s5

    P-TO263-3-2

    Abstract: No abstract text available
    Text: 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPB03N60S5 P-TO263-3-2 03N60S5 SPB03N60S5 Q67040-S4197 P-TO263-3-2

    03N60

    Abstract: SPB03N60S5
    Text: 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		PDF SPB03N60S5 PG-TO263 03N60S5 SPB03N60S5 Q67040-S4197 03N60

    transistor smd 6.z

    Abstract: SPN03N60S5
    Text: 03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 0.7 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN03N60S5 OT-223 VPS05163 Q67040-S4203 03N60S5 transistor smd 6.z SPN03N60S5

    Untitled

    Abstract: No abstract text available
    Text: 03N60S5 03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4184 Q67040-S4197

    Untitled

    Abstract: No abstract text available
    Text: 03N60S5 Preliminary data D,2/4 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity 4 3 G,1 2 S,3 1 VPS05163 COOLMOS Power Semiconductors


    Original     		PDF SPN03N60S5 VPS05163 SPN03N60S5 OT-223 03N60S5 Q67040-S4203

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    03N60S5

    Abstract: Q67040-S4184 SPB03N60S5 SPP03N60S5 P-TO-263-3-2
    Text: 03N60S5 03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4184 03N60S5 03N60S5 Q67040-S4184 SPB03N60S5 SPP03N60S5 P-TO-263-3-2

    03n60s5

    Abstract: transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 2A TO252-3-11 PG-TO252-3-11 SPD03N60S5 SPU03N60S5
    Text: 03N60S5 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 PG-TO252 PG-TO251 Q67040-S4227 03N60S5 03n60s5 transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 2A TO252-3-11 PG-TO252-3-11 SPD03N60S5 SPU03N60S5

    SPPX4N60S5

    Abstract: 03n60s5 Q67040-S4184 SPB03N60S5 SPP03N60S5
    Text: 03N60S5 03N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original     		PDF SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 SPPx4N60S5/SPBx4N60S5 Q67040-S4184 03N60S5 SPPX4N60S5 03n60s5 Q67040-S4184 SPB03N60S5 SPP03N60S5

    SPN03N60S5

    Abstract: No abstract text available
    Text: 03N60S5 Final data Cool MOSä ä Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Extreme dv/dt rated VDS @ Tjmax 650 V • Optimized capacitances RDS on 1.4 Ω • Improved noise immunity ID


    Original     		PDF SPN03N60S5 OT-223 VPS05163 Q67040-S4203 03N60S5 SPN03N60S5

    03n60s5

    Abstract: No abstract text available
    Text: 03N60S5 03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4227 Q67040-S4187 03n60s5

    Untitled

    Abstract: No abstract text available
    Text: 03N60S5 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 PG-TO252 PG-TO251 Q67040-S4227 03N60S5

    Untitled

    Abstract: No abstract text available
    Text: 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP03N60S5 PG-TO220 P-TO220-3-1 Q67040-S4184 03N60S5

    03n60s5

    Abstract: No abstract text available
    Text: 03N60S5 03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4227 Q67040-S4187 03n60s5

    03n60s5

    Abstract: No abstract text available
    Text: 03N60S5 03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4184 Q67040-S4197 03n60s5

    03N60S5

    Abstract: SPN03N60S5 GPS05560 VPS05163
    Text: 03N60S5 Preliminary data D,2/4 Cool MOS Small-Signal-Transistor 4 • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated 3 G,1 • Optimized capacitances 2 S,3 1 • Improved noise immunity VPS05163 COOLMOS Power Semiconductors


    Original     		PDF SPN03N60S5 VPS05163 SPN03N60S5 OT-223 03N60S5 Q67040-S4203 03N60S5 GPS05560 VPS05163

    Untitled

    Abstract: No abstract text available
    Text: 03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP03N60S5 P-TO220-3-1 PG-TO220-3-1 SPP03N60S5 PG-TO220-3-1 Q67040-S4184 03N60S5

    03n60s5

    Abstract: TRANSISTOR SMD MARKING CODE 2A Q67040-S4184 SPB03N60S5 SPP03N60S5
    Text: 03N60S5 03N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		PDF SPP03N60S5 SPB03N60S5 SPPx4N60S5/SPBx4N60S5 P-TO220-3-1 03N60S5 Q67040-S4184 P-TO263-3-2 SPP03N60S5 03n60s5 TRANSISTOR SMD MARKING CODE 2A Q67040-S4184 SPB03N60S5

    03N60S5

    Abstract: SPD03N60S5 P-TO251-3-1 P-TO252 SPU03N60S5
    Text: 03N60S5 03N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		PDF SPU03N60S5 SPD03N60S5 SPUx4N60S5/SPDx4N60S5 SPU03N60S5 P-TO251-3-1 P-TO252 03N60S5 Q67040-S4227 03N60S5 SPD03N60S5 P-TO251-3-1 P-TO252

    DIODE JS.9 smd

    Abstract: No abstract text available
    Text: SIEMENS 03N60S5 03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity


    OCR Scan     		PDF SPP03N60S5 SPB03N60S5 SPPx4N60S5/SPBx4N60S5 P-T0220-3-1 03N60S5 Q67040-S4184 P-T0263-3-2 DIODE JS.9 smd

    03N60S5

    Abstract: No abstract text available
    Text: SIEMENS 03N60S5 03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity


    OCR Scan     		PDF SPU03N60S5 SPD03N60S5 SPUx4N60S5/SPDx4N60S5 P-T0251 03N60S5 Q67040-S4227 P-T0252 03N60S5