Untitled
Abstract: No abstract text available
Text: Product Specification 108-2460 04Apr11 Rev A SMA In-Series Adapters 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for the TE Connectivity TE SMA In-Series Adapters. 1.2. Qualification When tests are performed on the subject product line, procedures specified in Figure 1 shall be used.
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04Apr11
05May83.
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74281
Abstract: No abstract text available
Text: SUP90N08-4m8P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) () ID (A) Qg (Typ) d 0.0048 at VGS = 10 V 90 0.006 at VGS = 8 V 90d 105 • 175 °C Junction Temperature • 100 % UIS Tested
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Original
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SUP90N08-4m8P
2002/95/EC
O-220AB
SUP90N08-4m8P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
74281
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiR316DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0068 at VGS = 10 V 30g 0.0093 at VGS = 4.5 V 30g VDS (V) 25 Qg (Typ.) 7.4 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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SiR316DP
2002/95/EC
SiR316DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IDCS-5020 Vishay Dale High Current, Shielded, Surface Mount Inductors FEATURES • • • • • • High energy storage Low resistance Magnetically shielded Tape and reel packaging for automatic handling Compliant to RoHS Directive 2002/95/EC Halogen-free according to IEC 61249-2-21
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Original
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IDCS-5020
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: 198 PHR-SI Vishay BCcomponents Aluminum Capacitors, Power High Ripple Current Snap-In FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Large types, miniaturized dimensions, cylindrical aluminum case, insulated with a blue sleeve
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Original
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2002/95/EC
E6/E12
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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SMD Magnetics
Abstract: smd marking code pJ 1219 SMD PJ 899
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book smd magnetics, inductors and ferrite beads vishay Dale vse-db0059-1201e Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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Original
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vse-db0059-1201e
SMD Magnetics
smd marking code pJ 1219
SMD PJ 899
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PDF
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8EWF02S
Abstract: No abstract text available
Text: VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3 Vishay Semiconductors Surface Mountable Fast Soft Recovery Diode, 8 A FEATURES Base common cathode + 2 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC • Halogen-free according to IEC 61249-2-21
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Original
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VS-8EWF02S-M3,
VS-8EWF04S-M3,
VS-8EWF06S-M3
J-STD-020,
2002/95/EC
O-252AA)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
8EWF02S
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PDF
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VS-8EWS08
Abstract: No abstract text available
Text: VS-8EWS08S-M3, VS-8EWS12S-M3 High Voltage Series Vishay Semiconductors Surface Mountable Input Rectifier Diode, 8 A FEATURES Base cathode 4, 2 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC • Halogen-free according to IEC 61249-2-21
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Original
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VS-8EWS08S-M3,
VS-8EWS12S-M3
J-STD-020,
2002/95/EC
O-252AA)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
VS-8EWS08
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PDF
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Untitled
Abstract: No abstract text available
Text: HBA48T12280 DC-DC Converter Data Sheet 36-75 VDC Input; 28 VDC @ 12.5 A Output Features • • • • • • • • • • • • Applications • • • Cellular Infrastructure Wireless communications Telecommunications • RoHS compliant for all six substances
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Original
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HBA48T12280
BCD00009-1
04-Apr-11
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si2366DS
2002/95/EC
OT-23
Si2366DS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiR316DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0068 at VGS = 10 V 30g 0.0093 at VGS = 4.5 V 30g VDS (V) 25 Qg (Typ.) 7.4 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
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Original
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SiR316DP
2002/95/EC
SiR316DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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74281
Abstract: sup90n08-4m8p
Text: SUP90N08-4m8P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) () ID (A) Qg (Typ) d 0.0048 at VGS = 10 V 90 0.006 at VGS = 8 V 90d 105 • 175 °C Junction Temperature • 100 % UIS Tested
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Original
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SUP90N08-4m8P
2002/95/EC
O-220AB
SUP90N08-4m8P-E3
11-Mar-11
74281
sup90n08-4m8p
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PDF
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67580
Abstract: high current sot-363 p-channel mosfet
Text: New Product Si1416EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 3.9 30 0.064 at VGS = 4.5 V 3.9 0.077 at VGS = 2.5 V 3.9 Qg (Typ.) 3.5 nC • Halogen-free According to IEC 61249-2-21
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Original
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Si1416EDH
2002/95/EC
OT-363
SC-70
Si1416EDH-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
67580
high current sot-363 p-channel mosfet
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PDF
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Untitled
Abstract: No abstract text available
Text: TLUR44K1L2 Vishay Semiconductors Universal LED in Ø 3 mm Tinted Diffused Package FEATURES • For DC and pulse operation • Luminous intensity categorized • Standard Ø 3 mm T-1 package • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
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TLUR44K1L2
2002/95/EC
2002/96/EC
JESD22-A114-B
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: SQ4840EY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SQ4840EY
AN609,
1742m
5128m
1136m
5628m
0894m
6457m
04-Apr-11
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PDF
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powerone 48v rectifier
Abstract: No abstract text available
Text: HBA48T12280 DC-DC Converter Data Sheet 36-75 VDC Input; 28 VDC @ 12.5 A Output Features • • • • • • • • • • • • Applications • • • Cellular Infrastructure Wireless communications Telecommunications • RoHS compliant for all six substances
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Original
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HBA48T12280
BCD00009-1
04-Apr-11
powerone 48v rectifier
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PDF
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SI1489EDH
Abstract: No abstract text available
Text: New Product Si1489EDH Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.048 at VGS = - 4.5 V - 2.0e 0.059 at VGS = - 2.5 V - 2.0e 0.073 at VGS = - 1.8 V - 2.0e 0.097 at VGS = - 1.5 V - 1.5 0.190 at VGS = - 1.2 V - 0.5
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Original
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Si1489EDH
2002/95/EC
OT-363
SC-70electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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VS-30EPH03
Abstract: 95253 VS-30EPH03PBF
Text: VS-30EPH03PbF Vishay Semiconductors Ultrafast Rectifier, 30 A FRED Pt FEATURES Base common cathode 2 • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current • Compliant to RoHS Directive 2002/95/EC
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Original
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VS-30EPH03PbF
2002/95/EC
O-247AC
11-Mar-11
VS-30EPH03
95253
VS-30EPH03PBF
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiZ790DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0047 at VGS = 10 V 35a 0.0059 at VGS = 4.5 V
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SiZ790DT
2002/95/EC
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
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Original
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Si3585CDV
2002/95/EC
11-Mar-11
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PDF
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Marking code H6
Abstract: No abstract text available
Text: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si2366DS
2002/95/EC
OT-23
Si2366DS-T1-GE3
11-Mar-11
Marking code H6
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PDF
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marking code BS
Abstract: SI1489EDH
Text: New Product Si1489EDH Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.048 at VGS = - 4.5 V - 2.0e 0.059 at VGS = - 2.5 V - 2.0e 0.073 at VGS = - 1.8 V - 2.0e 0.097 at VGS = - 1.5 V - 1.5 0.190 at VGS = - 1.2 V - 0.5
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Original
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Si1489EDH
2002/95/EC
OT-363
SC-70
11-Mar-11
marking code BS
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PDF
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67580
Abstract: si1416
Text: New Product Si1416EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 3.9 30 0.064 at VGS = 4.5 V 3.9 0.077 at VGS = 2.5 V 3.9 Qg (Typ.) 3.5 nC • Halogen-free According to IEC 61249-2-21
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Original
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Si1416EDH
2002/95/EC
OT-363
SC-70
Si1416EDH-T1-GE3
11-Mar-11
67580
si1416
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PDF
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Untitled
Abstract: No abstract text available
Text: IDCS-5020 Vishay Dale High Current, Shielded, Surface Mount Inductors FEATURES • • • • • • High energy storage Low resistance Magnetically shielded Tape and reel packaging for automatic handling Compliant to RoHS Directive 2002/95/EC Halogen-free according to IEC 61249-2-21
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Original
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IDCS-5020
2002/95/EC
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
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PDF
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