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    04N80C3 Search Results

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    04N80C3 Price and Stock

    Infineon Technologies AG SPD04N80C3ATMA1

    MOSFET N-CH 800V 4A TO252-3
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    DigiKey SPD04N80C3ATMA1 Digi-Reel 10,800 1
    • 1 $2.34
    • 10 $1.503
    • 100 $2.34
    • 1000 $0.7558
    • 10000 $0.7558
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    SPD04N80C3ATMA1 Cut Tape 10,800 1
    • 1 $2.34
    • 10 $1.503
    • 100 $2.34
    • 1000 $0.7558
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    SPD04N80C3ATMA1 Reel 7,500 2,500
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    Avnet Americas SPD04N80C3ATMA1 Reel 15 Weeks 2,500
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    • 10000 $0.60607
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    Mouser Electronics SPD04N80C3ATMA1 2,714
    • 1 $1.54
    • 10 $1.12
    • 100 $0.823
    • 1000 $0.709
    • 10000 $0.678
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    Newark SPD04N80C3ATMA1 Cut Tape 6,502 5
    • 1 $1.55
    • 10 $1.15
    • 100 $0.856
    • 1000 $0.737
    • 10000 $0.737
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    SPD04N80C3ATMA1 Reel 2,500
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    Rochester Electronics SPD04N80C3ATMA1 38 1
    • 1 $0.7544
    • 10 $0.7544
    • 100 $0.7091
    • 1000 $0.6412
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    Ameya Holding Limited SPD04N80C3ATMA1 3,062
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    Chip1Stop SPD04N80C3ATMA1 Cut Tape 5,145
    • 1 $0.912
    • 10 $0.796
    • 100 $0.621
    • 1000 $0.514
    • 10000 $0.467
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    EBV Elektronik SPD04N80C3ATMA1 16 Weeks 2,500
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    Infineon Technologies AG SPP04N80C3XKSA1

    MOSFET N-CH 800V 4A TO220-3
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    DigiKey SPP04N80C3XKSA1 Tube 360 1
    • 1 $2.37
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    • 1000 $0.76662
    • 10000 $0.6905
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    Avnet Americas SPP04N80C3XKSA1 Tube 15 Weeks 500
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    • 1000 $0.6435
    • 10000 $0.60606
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    Mouser Electronics SPP04N80C3XKSA1 495
    • 1 $2.2
    • 10 $1.12
    • 100 $1.01
    • 1000 $0.701
    • 10000 $0.69
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    Newark SPP04N80C3XKSA1 Bulk 499 1
    • 1 $2.01
    • 10 $1.07
    • 100 $0.968
    • 1000 $0.718
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    Rochester Electronics SPP04N80C3XKSA1 1
    • 1 $0.7672
    • 10 $0.7672
    • 100 $0.7212
    • 1000 $0.6521
    • 10000 $0.6521
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    EBV Elektronik SPP04N80C3XKSA1 16 Weeks 500
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    Infineon Technologies AG SPP04N80C3XK

    MOSFET N-CH 800V 4A TO220-3
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    DigiKey SPP04N80C3XK Tube
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    Infineon Technologies AG SPA04N80C3XKSA1

    MOSFET N-CH 800V 4A TO220-FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPA04N80C3XKSA1 Tube 500
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    • 1000 $0.97574
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    Chip1Stop SPA04N80C3XKSA1 Tube 29
    • 1 $0.562
    • 10 $0.517
    • 100 $0.517
    • 1000 $0.517
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    Infineon Technologies AG SPD04N80C3BTMA1

    MOSFET N-CH 800V 4A TO252-3
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    DigiKey SPD04N80C3BTMA1 Digi-Reel
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    SPD04N80C3BTMA1 Cut Tape
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    Find more 04N80C3 price and stock on Findchips.com

    04N80C3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    04N80C3

    Abstract: PG-TO252-3-11 Q47040-S4563 SPD04N80C3 INFINEON marking
    Text: 04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 1.3 Ω ID 4 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPD04N80C3 PG-TO252 Q47040-S4563 04N80C3 04N80C3 PG-TO252-3-11 Q47040-S4563 SPD04N80C3 INFINEON marking PDF

    04N80C3

    Abstract: JESD22 PG-TO220-3 SPP04N80C3
    Text: 04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPP04N80C3 PG-TO220-3 04N80C3 04N80C3 JESD22 PG-TO220-3 SPP04N80C3 PDF

    04N80C3

    Abstract: 04N80 Q47040-S4563 SPD04N80C3 04n80c
    Text: 04N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 1.3 Ω ID 4 A • Periodic avalanche rated P-TO252-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPD04N80C3 P-TO252-3-1 Q47040-S4563 04N80C3 04N80C3 04N80 Q47040-S4563 SPD04N80C3 04n80c PDF

    04N80C3

    Abstract: 04n80c kW10
    Text: 04N80C3 04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPP04N80C3 SPA04N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA04N80C3 04N80C3 04N80C3 04n80c kW10 PDF

    SPA04N80C3

    Abstract: No abstract text available
    Text: 04N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 1.3 Ω • Extreme dv/dt rated


    Original     		SPA04N80C3 P-TO220-3-31 04N80C3 P-TO220-3-31 Q67040-S4434 SPA04N80C3 PDF

    04N80C3

    Abstract: SMD Transistor g22 JESD22 SPD04N80C3 640 smd transistor marking
    Text: 04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPD04N80C3 PG-TO252-3 04N80C3 04N80C3 SMD Transistor g22 JESD22 SPD04N80C3 640 smd transistor marking PDF

    Untitled

    Abstract: No abstract text available
    Text: 04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 W Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPD04N80C3 PG-TO252-3 04N80C3 PDF

    04N80C3

    Abstract: spp04n80c3
    Text: 04N80C3 04N80C3 Preliminary data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω 4 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31


    Original     		SPP04N80C3 SPA04N80C3 P-TO220-3-31 P-TO220-3-1 Q67040-S4433 04N80C3 PDF

    04n80

    Abstract: 04N80C3 SPP04N80C3
    Text: 04N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 1.3 Ω • Extreme dv/dt rated


    Original     		SPP04N80C3 P-TO220-3-1 Q67040-S4433 04N80C3 04n80 04N80C3 SPP04N80C3 PDF

    04N80C3

    Abstract: SPA04N80C3
    Text: 04N80C3 04N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPP04N80C3 SPA04N80C3 P-TO220-3-31 P-TO-220-3-31: P-TO220-3-1 Q67040-S4433 04N80C3 SPA04N80C3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 1.3 Ω ID 4 A PG-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPD04N80C3 PG-TO252-3-1 SPD04N80C3 04N80C3 PG-TO252-3-1 Q47040-S4563 PDF

    04N80C3

    Abstract: SPA04N80C3 04N80C3* TO220 SPP04N80C3 P-TO-220-3-31 CTJ720 VDs-800V ID240
    Text: 04N80C3 04N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPP04N80C3 SPA04N80C3 P-TO220-3-31 P-TO220-3-1 P-TO-220-3-31: Q67040-S4433 04N80C3 04N80C3 SPA04N80C3 04N80C3* TO220 SPP04N80C3 P-TO-220-3-31 CTJ720 VDs-800V ID240 PDF

    04N80C3

    Abstract: 04n80
    Text: 04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPP04N80C3 PG-TO220-3 04N80C3 04N80C3 04n80 PDF

    04N80C3

    Abstract: 04N80C3* TO220 JESD22 PG-TO220-3 SPA04N80C3
    Text: 04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPA04N80C3 PG-TO220-3 04N80C3 04N80C3 04N80C3* TO220 JESD22 PG-TO220-3 SPA04N80C3 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF

    Untitled

    Abstract: No abstract text available
    Text: 04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPP04N80C3 PG-TO220-3 04N80C3 PDF

    04N80C3

    Abstract: 04N80C3* TO220 SPA04N80C3 SPP04N80C3 PG-TO220-3-31 SP000216300 04n80
    Text: 04N80C3 04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPP04N80C3 SPA04N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4433 04N80C3 04N80C3 04N80C3* TO220 SPA04N80C3 SPP04N80C3 SP000216300 04n80 PDF

    SMD Transistor g22

    Abstract: 04N80C3 04N80
    Text: 04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPD04N80C3 PG-TO252-3 04N80C3 SMD Transistor g22 04N80C3 04N80 PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 PDF

    Untitled

    Abstract: No abstract text available
    Text: 04N80C3 04N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω 4 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31


    Original     		SPP04N80C3 SPA04N80C3 P-TO220-3-31 P-TO220-3-1 Q67040-S4433 04N80C3 PDF

    04N80C3

    Abstract: SPA04N80C3
    Text: 04N80C3 04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPP04N80C3 SPA04N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA04N80C3 04N80C3 04N80C3 PDF

    SPA04N80C3

    Abstract: No abstract text available
    Text: 04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPA04N80C3 PG-TO220-3 04N80C3 SPA04N80C3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 9 Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPD04N80C3 PG-TO252-3 04N80C3 PDF

    04N80

    Abstract: 04N80C3 04N80C
    Text: 04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPA04N80C3 PG-TO220-3 04N80C3 04N80 04N80C3 04N80C PDF