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    05055 Search Results

    05055 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    59112-F36-05-055LF Amphenol Communications Solutions Minitek® 2.00mm, Board To Board, Unshrouded Vertical Stacking Header, Through Hole, Double Row, 10 Positions. Visit Amphenol Communications Solutions
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    05055 Price and Stock

    Pulse Electronics Corporation BSCH0010050556NJCS

    INDUCTOR RF
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    DigiKey BSCH0010050556NJCS Digi-Reel 188,765 1
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    BSCH0010050556NJCS Cut Tape 188,765 1
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    BSCH0010050556NJCS Reel 180,000 10,000
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    Mouser Electronics BSCH0010050556NJCS 30,000
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    Avnet Abacus BSCH0010050556NJCS Reel 32 Weeks 60,000
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    Pulse Electronics Corporation BSCH0010050556NJCP

    FIXED IND 56NH 200MA 820MOHM SMD
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    DigiKey BSCH0010050556NJCP Digi-Reel 20,605 1
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    BSCH0010050556NJCP Cut Tape 20,605 1
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    BSCH0010050556NJCP Reel 10,000 10,000
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    Master Electronics BSCH0010050556NJCP
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    Wurth Elektronik 885012005055

    CAP CER 10PF 50V C0G/NP0 0402
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    DigiKey 885012005055 Reel 20,000 10,000
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    Newark 885012005055 Cut Tape 8,009 10
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    Bristol Electronics 885012005055 8,397
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    Chip-Germany GmbH 885012005055 7,855
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    Pulse Electronics Corporation BSCH001005055N1SCP

    FIXED IND 5.1NH 400MA 200MOHM SM
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    DigiKey BSCH001005055N1SCP Digi-Reel 16,298 1
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    BSCH001005055N1SCP Cut Tape 16,298 1
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    Sager BSCH001005055N1SCP 50,000
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    Eaton Bussmann EXL1V0505-5R6-R

    FIXED IND 5.6UH 7.2A 24.2MOHM SM
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    DigiKey EXL1V0505-5R6-R Cut Tape 2,498 1
    • 1 $0.88
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    EXL1V0505-5R6-R Digi-Reel 2,498 1
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    EXL1V0505-5R6-R Reel 1,500 1,500
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    Sager EXL1V0505-5R6-R 1,500
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    05055 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This document was generated on 11/06/2009 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Description: 0505567812 Active Ring Tongue Terminal for 6 AWG, Closed Uninsulated Brazed Barrel, Stud Size 1/4" M6 , Oxygen-Free Copper, Width 10.00mm (.394"), Length 29.50mm (1.161")


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    PDF PS-50555-001 Pla01 SD-50556-001

    Untitled

    Abstract: No abstract text available
    Text: This document was generated on 11/06/2009 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Description: 0505557912 Active Ring Tongue Terminal for 8 AWG, Closed Uninsulated Brazed Barrel, Stud Size 1/2" M12 , Oxygen-Free Copper, Length 34.00mm (1.339")


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    PDF PS-50555-001 SD-50555-001

    Untitled

    Abstract: No abstract text available
    Text: This document was generated on 11/06/2009 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Description: 0505557012 Active Ring Tongue Terminal for 8 AWG, Closed Uninsulated Brazed Barrel, Stud Size 10 M5 , Oxygen-Free Copper, Width 12.00mm (.472"), Length 23.50mm (.925")


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    PDF PS-50555-001 SD-50555-001

    Untitled

    Abstract: No abstract text available
    Text: This document was generated on 11/06/2009 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Description: 0505557212 Active Ring Tongue Terminal for 8 AWG, Closed Uninsulated Brazed Barrel, Stud Size 5/16" M8 , Oxygen-Free Copper, Length 29.50mm (1.161")


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    PDF PS-50555-001 SD-50555-001

    Untitled

    Abstract: No abstract text available
    Text: This document was generated on 11/06/2009 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Description: 0505567112 Active Ring Tongue Terminal for 6 AWG, Closed Uninsulated Brazed Barrel, Stud Size 1/4" M6 , Oxygen-Free Copper, Width 12.00mm (.472"), Length 29.50mm (1.161")


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    PDF PS-50555-001 Pla01 SD-50556-001

    Untitled

    Abstract: No abstract text available
    Text: APT30M85SVR 40A 0.085Ω 300V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.


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    PDF APT30M85SVR

    APT10086BVFR

    Abstract: No abstract text available
    Text: APT10086BVFR 1000V POWER MOS V 13A 0.860Ω Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    PDF APT10086BVFR O-247 O-247 APT10086BVFR

    Untitled

    Abstract: No abstract text available
    Text: APT5024BVFR 500V POWER MOS V 22A 0.240Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    PDF APT5024BVFR O-247 O-247 APT5024BVR

    Untitled

    Abstract: No abstract text available
    Text: APT20M11JVR 200V 175A 0.011Ω POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    PDF APT20M11JVR OT-227 E145592

    APT30M70BVR

    Abstract: No abstract text available
    Text: APT30M70BVR 48A 0.070Ω 300V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


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    PDF APT30M70BVR O-247 O-247 APT30M70BVR

    319345S12

    Abstract: 165235SM12 135185SM5 0709s 12-2 3980-4900MHz 398490s12 600-1200MHz 15-17S 025050S
    Text: Model Number Frequency Tuning Tuning VCC ICC Voltage Sensitivity MHz 001001SMC5TM 10-10 MHz Output 2ND Noise Power c 10 KHz (VDC) (MHz/v) (VDC) (mA) (dBm) (dBc) (dBc) 1-3.5 3 5 25 -10 -110 004004SM5 42-46 MHz 0.5-4.5 3 5 8 -3±1 -13 -118 006009SMI12 60-90MHz


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    PDF 001001SMC5TM 004004SM5 006009SMI12 60-90MHz 007008SM10 64MHz 013015SMi9 130-150MHz 015020SM5 150-200MHz 319345S12 165235SM12 135185SM5 0709s 12-2 3980-4900MHz 398490s12 600-1200MHz 15-17S 025050S

    DIODE 248

    Abstract: No abstract text available
    Text: APT60M75JVR 62A 0.075Ω 600V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    PDF APT60M75JVR OT-227 E145592 DIODE 248

    APT5010LVR

    Abstract: apt5010l
    Text: APT5010LVR 500V 47A 0.100Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


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    PDF APT5010LVR O-264 O-264 APT5010LVR apt5010l

    APT8056BVFR

    Abstract: No abstract text available
    Text: APT8056BVFR 16A 0.560Ω 800V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    PDF APT8056BVFR O-247 O-247 APT8056BVFR

    A2YR

    Abstract: 80SQ 80SQ030 80SQ035 80SQ040 80SQ045 C-15 embient mounting data 17ec Z1103
    Text: INTERNATIONAL RECTIFIER 4855452 SS d È T | m ù S54S2 55C INTERNATIONAL RECTIFIER ODOSOSS 05055 D Data Sheet No. PD-2.047B INTERNATIONAL RECTIFIER l - 0 3 I « R - / " 7 SOSQ SERIES 8 Amp Schottky Power Rectifiers Description/Features Major Ratings and Characteristics


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    PDF S54S2 A2YR 80SQ 80SQ030 80SQ035 80SQ040 80SQ045 C-15 embient mounting data 17ec Z1103

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER <*855452 SS INTERNATIONAL d ËT| MÛ554S2 ODOSOSS R EC TIFIER 55C 05055 D Data Sheet No. PD-2.047B INTERNATIONAL R E C T IF IE R I R / - 3 - / “ 7 SOSO SERIES 8 Am p Schottky Power Rectifiers Description/Features Major Ratings and Characteristics


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    PDF 554S2

    Untitled

    Abstract: No abstract text available
    Text: APT10050LVR A dvanced P o w er Te c h n o l o g y 1000V 21A 0.500Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


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    PDF APT10050LVR O-264

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    Abstract: No abstract text available
    Text: APT5014LVR A dvanced P o w er Te c h n o l o g y 500V 37A 0.140n POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


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    PDF APT5014LVR O-264 O-264AA

    Untitled

    Abstract: No abstract text available
    Text: APT40M70JVR A dvanced P o w er Te c h n o lo g y 400V 53A 0.070Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


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    PDF APT40M70JVR OT-227 E145592

    Untitled

    Abstract: No abstract text available
    Text: APT5024BVR A dvanced P o w er Te c h n o l o g y 500V 22A 0.240Í1 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


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    PDF APT5024BVR O-247 O-247AD

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    Abstract: No abstract text available
    Text: APT20M22JVR ADVANCED P o w er T e c h n o lo g y 200V 97A 0 .0220. POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


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    PDF APT20M22JVR OT-227 E145592

    Untitled

    Abstract: No abstract text available
    Text: APT40M70LVR ADVANCED W jA P o w e r T e c h n o lo g y o.o7on 57a 4 oov POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


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    PDF APT40M70LVR O-264

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    Abstract: No abstract text available
    Text: A P T 10M 11 LV R A dvanced W 7Æ P o w e r Te c h n o l o g y ioov 100a 0.01m POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


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    PDF O-264 APT10M1LVR

    Untitled

    Abstract: No abstract text available
    Text: APT30M40JVR ADVANCED P ow er Te c h n o l o g y 300v 70a 0 .0 4 0 0 POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


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    PDF APT30M40JVR OT-227 E145592