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    06NS Search Results

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    SN74LS06NSR Texas Instruments Hex inverter buffers / drivers with high-voltage outputs 14-SO 0 to 70 Visit Texas Instruments Buy
    SN75C1406NSR Texas Instruments Triple Low-Power Drivers And Receivers 16-SO 0 to 70 Visit Texas Instruments Buy
    SN74LS06NSRG4 Texas Instruments Hex inverter buffers / drivers with high-voltage outputs 14-SO 0 to 70 Visit Texas Instruments Buy
    SN7406NSR Texas Instruments Hex inverter buffers / drivers with high-voltage outputs 14-SO 0 to 70 Visit Texas Instruments Buy
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    06NS Price and Stock

    Infineon Technologies AG BSC016N06NSATMA1

    MOSFET N-CH 60V 30A/100A TDSON
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    Infineon Technologies AG BSC028N06NSTATMA1

    MOSFET N-CH 60V 24A/100A TDSON
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    Infineon Technologies AG BSC019N06NSATMA1

    MOSFET N-CH 60V 100A TDSON-8 FL
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    Infineon Technologies AG BSC0906NSATMA1

    MOSFET N-CH 30V 18A/63A TDSON
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    Infineon Technologies AG BSC028N06NSSCATMA1

    MOSFET N-CH 60V 100A TDSON
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    06NS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    JEDEC SPD No.21

    Abstract: JEP106 001N
    Text: JEDEC Standard No. 21–C Page 4.1.2.4 – 1 4.1.2.4 – Appendix D: DDR Synchronous DRAM DDR SDRAM 1 – Introduction This application note fully describes the Serial Presence Detect assignments for SPD used on Double Data Rate Synchronous DRAM Modules. All unused entries will be coded as 00h or FFh. All unused


    Original
    13M32734BCD-260Y 31334D33323733344243442D323630592020 JEDEC SPD No.21 JEP106 001N PDF

    JEP106

    Abstract: No abstract text available
    Text: Application Note SPD for DDR2 SDRAM Module 1. Introduction This application note describes the Serial Presence Detect assignments for SPD revision 1.0 initial release used on Double Data Rate Synchronous DRAM 2 Modules. Chapter 1 summarizes the byte assignments. Chapter 2 gives the details of each of these bytes. Included


    Original
    M378T6553MG0-CD5 4D3320373854363535334D47302D434435 JEP106 PDF

    Untitled

    Abstract: No abstract text available
    Text: 8 7 V1.1 I N O TE: T H IS D EV IC E IS R O H S C O M P LIA N T. REVISIONS SYM DESCRIPTION DATE APPROVED SYM DESCRIPTION DATE A A A A ‘ “CUSTOMER DRAWING FOR REFERANCE ONLY, SAMPLES APPROVAL ARE REQUIRED!! APPROVED 117 SPECIFICATIONS: CONTACT RESISTANCE: 30mfi MAX.


    OCR Scan
    30mfi 100MO DJ001-W06NS 31/MAR/08â 31/MAR/08' DJ001-W PDF

    EF7910

    Abstract: calling bell circuit diagram of calling bell m-tron mto nfc transmitter and receiver CLOCK GENERATOR 1HZ using TC 4069 ccitt r1 100X2 m-tron 4.9152 V.23
    Text: EF7910 ADVANCE INFORM ATION HMOS FSK M O DEM FSK MODEM The E F 7910 is a single-chip asynchronous Frequency S h ift K e ying FSK voiceband m odem . I t is p in selectable fo r baud rates o f 3 0 0 , 6 0 0 o r 1200 bits per second and is c o m p a tib le w ith th e applicable Bell and C C IT T


    OCR Scan
    EF7910 EF7910 0780F calling bell circuit diagram of calling bell m-tron mto nfc transmitter and receiver CLOCK GENERATOR 1HZ using TC 4069 ccitt r1 100X2 m-tron 4.9152 V.23 PDF

    Untitled

    Abstract: No abstract text available
    Text: 8 V1.1 I N O T E: T H IS 7 D E V IC E IS ROHS C O M P L IA N T . REVISIONS SYM A DESCRIPTION DATE APPROVED A SYM A DESCRIPTION DATE APPROVED A «CUSTOMER DRAWING FOR REFERANCE ONLY, SAMPLES APPROVAL ARE REQUIRED!! 117 SPECIFICATIONS: CONTACT RESISTANCE: 30m fi MAX.


    OCR Scan
    30mfi 100Mfi DJ001-W06NS /MAR/08' 31/MAR/08' PDF