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    0826 IC Search Results

    0826 IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    0826 IC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ohmmeter

    Abstract: C1608X7R1E104K
    Text: 19-0826; Rev 0; 5/07 MAX4754A Evaluation Kit The MAX4754A evaluation kit EV kit is a fully assembled and tested printed-circuit board (PCB) that demonstrates the capabilities of the MAX4754A 0.5Ω, quad single-pole, double-throw (SPDT) switch with dual control lines. The EV kit comes with the


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    MAX4754A MAX4754AETE+ MAX4754AEVKIT+ MAX4754A ohmmeter C1608X7R1E104K PDF

    DIL208

    Abstract: ICE103
    Text: A 6 B C D PX-ICE-10300 FLATソケット変換時寸法図 17.41 6 93.00 5 45.70 41.00 45.70±1.00 5 9.50 PRB-EX-DIL208-AXN/NQ103 4 12.55 4 1.60 9.00 76.75 CONTOROLLER ターゲット基板 パッケージセンター 34.45 10.91±1.00 65.05 3 3 76.75 150.00


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    PX-ICE-10300 PRB-EX-DIL208-AXN/NQ103 PRB-EX-103004DIL208 ICE103 PRB-EX-DIL208 103004DIL208 DIL208 PDF

    ID 7576

    Abstract: No abstract text available
    Text: ï Ï 6 ï 5 NICHT SIND IN m IN 4 VERMA55TE NICHT Ï 3 KANTEN MAßSTÄBLICH ÄNDERUNGEN NISCHEN BEHALTEN DIE DEM FORTSCHRITT WIR UNS VERTRAULICH TECH­ DIENEN, VOR U N V E R Ö F F E N T L IC H T E Z E ICTjJJW W r'' A L L E ZEICHNUNG UND NUR DEUTSCHLAND DURCH


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    VERMA55TE hk5200 /hk5200/ed hk5200 p/hk5200/edm ID 7576 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 3 >G E S C H L O S S E N E R i f ;!A1 LJ/ u J/ IJ TX I 2 1i uJ 1r U u IJ Ti U J/ \ u I IJ u I IJ I N I C H T VER HASSTE KANTEN SIND N I C H T M A ß S T Ä B L IC H DECKEL ZEICHNUNG GESCHÜTZT @ C O P Y R IG H T ALLE N IT DURCH Z E IC H N U N G . ALLE


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    0B50LET5 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 3 2 N I C H T VERHASSTE KANTEN SIND N I C H T M A ß S T Ä B L IC H if 4 ft\1{ \1r i LJ/ u ! U ÌI u J Ti r \[ Z E IC H N U N G J G ESC H Ü TZT @ C O P Y R IG H T AMP R EC H TE VO RBEH ALTEN . NUR N IT D URCH 19 9 0 D EU TSCHLAN D A LLE VERTRAULICH


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    eq003977 75mm2 JN-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TA4009F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A A fl 1 Q F • * m ■ + * ■ 1.9GHz BAND PRE AMPLIFER APPLICATION FEATURES • Low current Ice = 12mA (Typ. • High gain Gp = 12dB (Typ.) • Recommended operating voltage : Mqq = 2.1~33\I


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    TA4009F 1900MHz 384kbps. 600kHz. PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A TA4009F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4009F 1.9GHz BAND PRE AMPLIFER APPLICATION FEATURES • Low current ICC = 12mA Typ. • High gain Gp = 12dB (Typ.) Recommended operating voltage : V ç c —2.7—3.3V PIN ASSIGNMENT (TOP VIEW)


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    TA4009F PDF

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    Abstract: No abstract text available
    Text: TOSHIBA TA4008F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4008F 1.6GHz BAND BUFFER AMPLIFIER APPLICATION FEATURES • Low current Ice =9mA Typ. • Recommended operating voltage PIN ASSIGNMENT (TOP VIEW) IN GND V c c = 2 .7 - 3 .3V MARKING


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    TA4008F 10OOpF PDF

    ic 3717

    Abstract: No abstract text available
    Text: T H IS L0C D R A W IN G IS A C O N TRO LLED DO C UM ENT. R EVIS IO N S D IS T p LTR D E S C R IP T IO N DATE DWN A PVD M+ N Revisio nsanpassung an PN 826368 1 1 .1 0 . 9 4 Masek — P Revisio nsanpassung an PN 826368 2 0.Jan.95 AEG Masek 12JAN11 KK HMR P1


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    12JAN11 ic 3717 PDF

    i 7555

    Abstract: H 7555 DIN 53505 7555 7552 sn 7555
    Text: i Ì 6 i 5 NICHT m m SIND p- 4 VERMA55TE NICHT KANTEN MAßSTÄBLICH ÄNDERUNGEN DI E DEM Ì 3 VERTRAULICH TECH­ N I S C H E N F O R T S C H R I T T DIENEN, B E H A L T E N W I R U N S V OR UNVERÖFFENTLICHTE VORBEHALTEN. NUR NIT ZEICHNUNG. ALLE VERVIELFÄLTIGUNG


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    75mm2 AMP-EN-556 i 7555 H 7555 DIN 53505 7555 7552 sn 7555 PDF

    Untitled

    Abstract: No abstract text available
    Text: TLD U1100 T09 TOSHIBA TOSHIBA LED LAMP T L S U 1 1 0 0 (T 0 9 ), T L O U 1 1 0 0 (T 0 9 ), T L Y U 11 0 0 (T 0 9 ) T L G U 1 1 0 0 (T 0 9 ), T L P G U 1 1 0 0 (T 0 9 ) PANEL CIRCUIT INDICATOR Surface Mount Device 3.2 (L) X 2.8 (W) X 1.9 (H) mm Size Flat-top Type


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    U1100 TLSU1100 TLYU1100 TLGU1100 TLPGU1100 TLDU1100 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA S4F42D T09 TOSHIBA LED LAMP S4F42Q1 (T09), S4F42Z1 (T09) PANEL CIRCUIT INDICATOR Surface Mount Device 3.2 ( L) X 2.8 (W) X 1.9 (H) mm Size Flat-top Type InGaA^P LED (High-Bright type) Line-up 2 Color : Green, Pure Green Available of Automounting Machine Use


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    S4F42D S4F42Q1 S4F42Z1 140han PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TLD U 1 102 T10 TOSHIBA LED LAMP TLSU1102 (T10), TLOU1102 (T10), TLYU1102 (T10) TLGU1102 (T10), TLPGU1102 (T10) PANEL CIRCUIT INDICATOR Surface Mount Device 3.2 (L) X 2.8 (W) X 3.4 (H) mm Size 02.8 mm Diameter Lens-top Type InGaA^P LED Line-up 5 Color : Red, Orange, Yellow, Green, Pure Green


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    TLSU1102 TLOU1102 TLYU1102 TLGU1102 TLPGU1102 PDF

    TA4008F

    Abstract: s22p
    Text: TOSHIBA TA4008F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4008F 1.6GHz BAND BUFFER AMPLIFIER APPLICATION FEATURES • Low current l x =9mA (Typ. • Recommended operating voltage PIN ASSIGNMENT (TOP VIEW) IN GND E VCC = 2.7~3.3V MARKING


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    TA4008F 1000pF TA4008F s22p PDF

    DIN 53505

    Abstract: 7585 bl 7581 50LIERUNG
    Text: ì ì 6 ì 5 NICHT 4 VERMA55TE KANTEN ÄNDERUNGEN NISCHEN SIND co NICHT Ì 3 MAßSTÄBLICH m BEHALTEN DIE DEM FORTSCHRITT WI R UNS VE RT RAUL I CH TECH­ DIENEN, UNVERÖFFENTLICHTE VORBEHALTEN. VOR NUR NIT ZEICHNUNG. ALLE VERVIELFÄLTIGUNG GE NE HMI GUNG DURCH


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    AMP-EN-556 58s54 G02US1 DEPT5200 WH5200 DIN 53505 7585 bl 7581 50LIERUNG PDF

    TA4103F

    Abstract: 2406MHz
    Text: TOSHIBA TA4103F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A 4 1 03F 1.9GHz BAND UP CONVERTER APPLICATION FEATURES • Built in Lo and IF buffer amplifiers. • Double balanced M IX circuit • High conversion gain: • Recommended operating voltage :


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    TA4103F TA410 240MHz 1660MHz 1900MHz 240MHz, 1900MHz, 20dBmW 600kHz, TA4103F 2406MHz PDF

    TA4009F

    Abstract: No abstract text available
    Text: TOSHIBA TA4009F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4009F 1.9GHz BAND PRE AMPLIFER APPLICATION FEATURES • Low c u rre n t l x = 12mA (Typ. • High gain G p = 1 2 d B (Typ.) • Recom m ended o p e ra tin g v o lta g e : V ( x = 2 .7~ 3.3 V


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    TA4009F 1900MHz 384kbps. 600kHz. TA4009F PDF

    LT 0826

    Abstract: No abstract text available
    Text: TOSHIBA SSM3K02F TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K02F HIGH SPEED SW ITCHING APPLICATIONS • S m a ll Package • Low on Resistance U n it in mm R on = 200 m il M ax (V q S = 4 V ) R on = 250 m il (M ax) (V q S = 2.5 V ) •


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    SSM3K02F LT 0826 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA SSM3K02F TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K02F HIGH SPEED SWITCHING APPLICATIONS • Small Package • Low on Resistance Unit in mm Ron = 200 m il Max (V q s = 4 V) Ron = 250 mO (Max) (V q s = 2.5 V) • Low Gate Threshold Voltage


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    SSM3K02F PDF

    Untitled

    Abstract: No abstract text available
    Text: TA4103F TOSHIBA TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA410 3 F 1.9GHz BAND UP CONVERTER APPLICATION FEATURES • Built in Lo and IF buffer amplifiers. • Double balanced MIX circuit • High conversion gain: • Recommended operating voltage :


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    TA4103F TA410 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TA4008F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA 4008 F 1.6GHz BAND BUFFER AMPLIFIER APPLICATION FEATURES • Low current lc c = 9mA Typ. • Recommended operating voltage PIN ASSIGNMENT (TOP VIEW) IN GND tn h GND h uc


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    TA4008F 1000pF PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ167 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 S J 1 67 HIGH SPPED SWITCHING APPLICATIONS Unit in mm ANALOG SWITCH APPLICATIONS 4.2MAX. INTERFACE APPLICATIONS Excellent Switching Time : ton = 14 ns Typ. 0.55MAX. High Forward Transfer Admittance : |Yfs| = 100 mS (Min.)


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    2SJ167 55MAX. 2SK1061 PDF

    Untitled

    Abstract: No abstract text available
    Text: i Ì 6 i 5 NICHT X m SIND p- 4 VERMA55TE NICHT Ì 3 KANTEN MAßSTÄBLICH ÄNDERUNGEN NISCHEN BEHALTEN DIE DEM FORTSCHRITT WIR UNS VERTRAULICH TECH­ DIENEN, UNVERÖFFENTLICHTE VORBEHALTEN. VOR NUR NIT ZEICHNUNG. ALLE VERVIELFÄLTIGUNG GENEHMIGUNG DURCH UND


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    VERMA55TE VM5200 PT5200 WH5200 75mm2 AMP-EN-556 PDF

    22499

    Abstract: No abstract text available
    Text: 7 TH IS DRAW ING IS U N P U B L IS H E D . RE LEA S E D FOR 4 6 PU B LIC ATIO N LOC ALL RIGHTS RESERVED. COPYRIGHT - FT By - REVISIONS D IS T LTR N4 D E S C R IP T IO N REVISED PER E C O - 12 - 0 0 9 7 0 0 DATE DWN APVD 23M A Y 12 KH DR 3.56 DIA [.140] 3 HOLES


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