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Untitled Abstract: No abstract text available Text: A D V A N C E D PO WE R T E C H N O L O G Y blE D • 0257^0=1 0 0 0 0 0 5 4 bTI H A V P ■ r W /jA A dvanced pow er Te c h n o l o g y APT50GL60BN 600V 50A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR	OCR Scan	PDF	APT50GL60BN
APT45GL100BN Abstract: 10A fast Gate Turn-off Thyristor Text: A D V A NC ED POWER TECHNOLOGY b lE OZSTSCm D OOOOèbb 310 HAVP A D V A N C ED PO W ER Te c h n o l o g y • APT45GL100BN 1000V 45A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol	OCR Scan	PDF	APT45GL100BN 10A fast Gate Turn-off Thyristor
50N6 Abstract: xs 004 a Text: ADVANCED TECHNICAL INFORMATION v v IXGN 50N60BD3 HîPerFÂST K1BT with HiPerFRED CES ^C25 CE sat = 600 V • 75 A = 2.5 V Buck configuration Symbol B CM Test Conditions SOT-227B, miniBLOC T, = 25°C to 150°C 600 V T. = 25°C to 150°C; RGE = 1 MO 600	OCR Scan	PDF	50N60BD3 OT-227B, 50N6 xs 004 a
APT35G60BN Abstract: APT35G50BN T3BIA Text: ADVANCED POWER T EC H N O L O G Y • D S S V S G 1! O Q O O b S l 3*10 M A V P ■ jjp j A d v a n c e d W/Æ PO W ER ^ - 3 1 A I B Te c h n o l o g y ® APT35G60BN APT35G50BN 600V 500V 35A 35A POW ER MOS IV \|GBT N - C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE	OCR Scan	PDF	G257SGtl APT35G60BN APT35G50BN 0000b25 T-39-31 O-247AD T3BIA
30n60 Abstract: 1XSH30N60A Text: lOIXYS lowvcemigbt IXSH/IXSM 30 N60 IXSH/IXSM 30 N60A High Speed IGBT Short Circuit SOA Capability o- Symbol Test Conditions V Maximum Ratings Tj = 25°C to 150°C 600 V vC0B Tj = 25°C to 150°C; RaE = 1 Mfi 600 V VGES Continuous ±20 V v Transient ±30 V	OCR Scan	PDF	30N60 30N60A 30N60U1 30N60AU1 1XSH30N60A
Untitled Abstract: No abstract text available Text: DIXYS High Voltage, Low VCE sat IGBT IXSH 45N120 VCES = 1200 V ^C25 = 75 A = 3V V CE(sat) Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 1200 V v CGR T.J = 25°C to 150°C; Roc „ = 1 MQ 1200	OCR Scan	PDF	45N120 125oC
.24n50 Abstract: xgh2 IXGH24N50BU1 IXGH24N60BU1 Text: Preliminary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES C 25 VCE(sat) t. 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack T0-247 SMD (24NBU1 S) Symbol TestConditions I C (TAB) Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C	OCR Scan	PDF	IXGH24N50BU1 IXGH24N60BU1 T0-247 24N50 24N60 .24n50 xgh2 IXGH24N60BU1
50N60 Abstract: 50N50B IXGH50N50B IXGH50N60B Text: Preliminary data V y ces HiPerFAST IGBT Symbol vCES vCGR VGES VGEM Maximum Ratings Test Conditions 500 600 V T,J =25°C to 150°C; RG„E = 1 500 600 V Continuous ±20 V Transient ±30 V 'cm Tc = 25°C, 1ms SSOA VSE = 15 V, TVJ = 125°C, RG= 10 a RBSOA	OCR Scan	PDF	50N50B 50N60B 50N50 50N60 O-247 IXGH50N50B IXGH50N60B
Untitled Abstract: No abstract text available Text: □IXYS Preliminary data IXGH22N50BU1 IXGH22N50BU1S HiPerFAST IGBT with Diode V CES 500 V 44 A 2.1 V 55 ns ^C 25 V CE(sat)typ Combi Pack ^fi(typ) ?C G f\| TO-247 SMD* Symbol Test Conditions V VCGH Ta= 25°C to 150°C v oE Maximum Ratings m T,J = 25°C to 150°C; FU	OCR Scan	PDF	IXGH22N50BU1 IXGH22N50BU1S O-247 4bflb22b
Untitled Abstract: No abstract text available Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH17N100U1 IXGH17N100AU1 v CES ^C25 V * CE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions v CES v CGR v GES v’ Td =25°C to ^ = 25°C to 150°C; Maximum Ratings 150°C	OCR Scan	PDF	IXGH17N100U1 IXGH17N100AU1 O-247 4bflb22b 1996IXYS 17N100U1 17N100AU1 0003L4A