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Untitled Abstract: No abstract text available Text: Preliminary‡ 8Mb: 512K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W512KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages	Original	PDF	MT45W512KW16BEGB 16-word 09005aef82e41987/Source: 09005aef82e419a5
smd code marking HD Abstract: linear technology part numbering smd code Ub SMD MARKING CODE h5 Text: 8Mb: 512K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W512KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages	Original	PDF	MT45W512KW16BEGB 16-word 09005aef82e41987 09005aef82e419a5 smd code marking HD linear technology part numbering smd code Ub SMD MARKING CODE h5
Untitled Abstract: No abstract text available Text: 4Mb: 256K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W256KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages	Original	PDF	MT45W256KW16BEGB 16-word 09005aef8329f3e3 09005aef82e419a5
Untitled Abstract: No abstract text available Text: Preliminary‡ 4Mb: 256K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W256KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages	Original	PDF	MT45W256KW16BEGB 16-word 09005aef8329f3e3/Source: 09005aef82e419a5