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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Preliminary‡ 4Mb: 256K x 16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W256KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC	Original	MT45W256KW16PEGA 16-word 48-Ball 09005aef8329b746/Source: 09005aef82f264aa	PDF
Untitled Abstract: No abstract text available Text: Preliminary‡ 8Mb: 512K x 16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W512KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC	Original	MT45W512KW16PEGA 16-word 48-Ball 09005aef82f264f6/Source: 09005aef82f264aa	PDF
tbw 70.18 Abstract: MT45V256KW16PEGA Text: 4Mb: 3.0V Core Async/Page PSRAM Memory 256K x 16 Features 3.0V Core Async/Page PSRAM Memory MT45V256KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 55ns and 70ns • VCC, VCCQ voltages – 2.7–3.6V VCC – 2.7–3.6V VCCQ	Original	MT45V256KW16PEGA 16-word 48-Ball 09005aef832450a3/Source: 09005aef82f264aa tbw 70.18 MT45V256KW16PEGA	PDF
Untitled Abstract: No abstract text available Text: Preliminary‡ 4Mb: 256K x 16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W256KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC	Original	MT45W256KW16PEGA 16-word 48-Ball 09005aef8329b746/Source: 09005aef82f264aa	PDF
Untitled Abstract: No abstract text available Text: 4Mb: 256K x16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W256KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC – 1.7–3.6V1 VCCQ	Original	MT45W256KW16PEGA 16-word 09005aef8329b746 09005aef82f264aa	PDF
Diode smd f6 Abstract: smd diode marking a6 smd transistor marking A5 48 ball VFBGA marking E5 micron sram smd diode MARKING F6 SMD MARKING CODE h5 transistor smd marking CR Text: 8Mb: 512K x16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W512KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC – 1.7–3.6V1 VCCQ	Original	MT45W512KW16PEGA 16-word 09005aef82f264f6 09005aef82f264aa Diode smd f6 smd diode marking a6 smd transistor marking A5 48 ball VFBGA marking E5 micron sram smd diode MARKING F6 SMD MARKING CODE h5 transistor smd marking CR	PDF
MT45V512KW16PEGA-55WT Abstract: No abstract text available Text: 8Mb: 3.0V Core Async/Page PSRAM Memory 512K x 16 Features 3.0V Core Async/Page PSRAM Memory MT45V512KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 55ns and 70ns • VCC, VCCQ voltages – 2.7–3.6V VCC – 2.7–3.6V VCCQ	Original	MT45V512KW16PEGA 16-word 48-Ball 09005aef82f264f6/Source: 09005aef82f264aa MT45V512KW16PEGA-55WT	PDF