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    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P idB = 39 dBm at 4.4 GHz to 5.0 GHz


    OCR Scan     		PDF TIM4450-8L MW50520196 TIM4450-8L 0a2S30b