0D22401 Search Results

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Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4951-4 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 36.0 dBm at 4.9 GHz to 5.1 GHz • High gain - G1dB = 10.0 dB at 4.9 GHz to 5.10 GHz • Broad band internally matched • Hermetically sealed package