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    CDP1804

    Abstract: CDP6805
    Text: G E SOLID STATE D l D E I 3fl750fll O P l b b ? 1! fi _ :_ CDP68HC68R1, CDP68HC68R2 CMOS 128-Word CDP68HC68R1 and 'rWi>‘ 35 256-Word (CDP68HC68R2) by 8-Bit Static RAMs Product Preview TO P Random-Access Memories (RAMs) -


    OCR Scan     		PDF 3fl750fll CDP68HC68R1, CDP68HC68R2 128-Word CDP68HC68R1) 256-Word CDP68HC68R2) 92CS-37865 CDP68HC68R2 CDP1804 CDP6805

    CXK581000BM

    Abstract: CXK581000BP cxk581000b a6ga STI 9111 CXK581000BTM A15U
    Text: S O N Y CXK581OOOBTM/BYM/BM/BP -55LL/70LL/1 OLL 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581 OOOBTM/BYM/BM/BP is a high speed CMOS static RAM organized as 131072 words by 8 bits. Special feature are low power consumption, high speed and broad package line-up.


    OCR Scan     		PDF CXK581OOOBTM/BYM/BM/BP -55LL/7oluioll 131072-word CXK581 100ns -10LL CXK581000BTM/BYM CXK581000BM CXK581000BP cxk581000b a6ga STI 9111 CXK581000BTM A15U

    SEP8526

    Abstract: sep8526-002 diode honeywell
    Text: b7E » • 4SS1Û30 001bb7S MOT « H O N l HONEYWELL INC/ MICRO SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106


    OCR Scan     		PDF 001bb7S SEP8526 SDP8406/8426 SDP8106 SDP8000/8600 SEP8526 0Dlbb77 SDP8426 sep8526-002 diode honeywell