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    TE Connectivity GA10K3A1012I

    NTC Thermistors DISC-10K @25C 0.1C FROM 0TO70C
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    TE Connectivity GA100K6A1014-2

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    TE Connectivity GA100K6A1014-1

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    TE Connectivity GA100K6A91

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    0TO70 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K7A323600M

    Abstract: K7B321825M-QC65 K7A321800M
    Text: K7A323600M K7A321800M 1Mx36 & 2Mx18 Synchronous SRAM Document Title 1Mx36 & 2Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial draft May. 10. 2001 Advance 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary


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    PDF K7A323600M K7A321800M 1Mx36 2Mx18 2Mx18-Bit 165FBGA K7A3236 165FBGA K7A323600M K7B321825M-QC65 K7A321800M

    K7M321825M

    Abstract: K7M321825M-QC75 K7M323625M K7M323625M-QC75
    Text: K7M323625M K7M321825M 1Mx36 & 2Mx18 Flow-Through NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 10. 2001 Preliminary 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary


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    PDF K7M323625M K7M321825M 1Mx36 2Mx18 2Mx18-Bit 165FBGA 165FBGA x18/x36 K7M321825M K7M321825M-QC75 K7M323625M K7M323625M-QC75

    K7N401801B

    Abstract: K7N403601B
    Text: K7N403601B K7N401801B 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary 0.1 1. Changed DC parameters Icc ; from 350mA to 290mA at -16,


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    PDF K7N403601B K7N401801B 128Kx36 256Kx18 256Kx18-Bit 350mA 290mA 330mA 270mA K7N401801B K7N403601B

    K7B801825B

    Abstract: K7B803625B
    Text: K7B803625B K7B801825B 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft May. 18 . 2001 Preliminary 0.1 Add x32 org part and industrial temperature part


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    PDF K7B803625B K7B801825B 256Kx36 512Kx18 512Kx18-Bit 119BGA 225MHz K7B801825B K7B803625B

    K7N161801A

    Abstract: K7N163601A
    Text: K7N163601A K7N161801A 512Kx36 & 1Mx18 Pipelined NtRAM TM Document Title 512Kx36 & 1Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Initial document. Add JTAG Scan Order Add x32 org and industrial temperature . Add 165FBGA package Speed bin merge.


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    PDF K7N163601A K7N161801A 512Kx36 1Mx18 1Mx18-Bit 165FBGA K7N1636 K7N161801A K7N163601A

    Untitled

    Abstract: No abstract text available
    Text: K7A163608A K7A163208A K7A161808A PRELIMINARY 512Kx36/x32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial draft 1. Add x32 org and industrial temperature


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    PDF K7A163608A K7A163208A K7A161808A 512Kx36/x32 1Mx18 1Mx18-Bit

    K7A161801M

    Abstract: K7A163601M advh
    Text: K7A163601M K7A161801M 512Kx36 & 1Mx18 Synchronous SRAM Document Title 512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft Jan. 18. 1999 Preliminary 0.1 1. Update ICC & ISB values. 2. Remove tCYC 117MHz -85


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    PDF K7A163601M K7A161801M 512Kx36 1Mx18 1Mx18-Bit 117MHz 150mA 110mA 130mA K7A161801M K7A163601M advh

    NC-2H

    Abstract: K7B161825A K7B163225A K7B163625A
    Text: K7B163625A K7B163225A K7B161825A Preliminary 512Kx36/32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History 1. Initial draft 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature .


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    PDF K7B163625A K7B163225A K7B161825A 512Kx36/32 1Mx18 512Kx36/x32 1Mx18-Bit 165FBGA NC-2H K7B161825A K7B163225A K7B163625A

    K7N161801A

    Abstract: K7N163201A K7N163601A
    Text: K7N163601A K7N163201A K7N161801A Preliminary 512Kx36/32 & 1Mx18 Pipelined NtRAMTM Document Title 512Kx36/32 & 1Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 Draft Date History 1. Initial document. 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature .


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    PDF K7N163601A K7N163201A K7N161801A 512Kx36/32 1Mx18 1Mx18-Bit 165FBGA K7N1636 K7N161801A K7N163201A K7N163601A

    K7A801801B

    Abstract: K7A803201B K7A803601B
    Text: K7A803601B K7A803201B K7A801801B PRELIMINARY 256Kx36 & 256Kx32 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History Draft Date Remark Initial draft 1. Delete pass- through


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    PDF K7A803601B K7A803201B K7A801801B 256Kx36 256Kx32 512Kx18 512Kx18-Bit K7A801801B K7A803201B K7A803601B

    K7A161801A

    Abstract: K7A163201A K7A163601A
    Text: K7A163601A K7A163201A K7A161801A PRELIMINARY 512Kx36/32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History Draft Date Remark 1. Initial draft 1. Add x32 org and industrial temperature .


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    PDF K7A163601A K7A163201A K7A161801A 512Kx36/32 1Mx18 1Mx18-Bit K7A1636 K7A161801A K7A163201A K7A163601A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC5164 5 805AJ/AFT/AJS/AFTS-40,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,6O8-WORD X8-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)805AJ/AFT/AJS/AFTS is an EDO (hyper page) dynamic RAM organized as 8,388,608


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    PDF TC5164 805AJ/AFT/AJS/AFTS-40 805AJ/AFT/AJS/AFTS 32-pin

    DG381AAK

    Abstract: No abstract text available
    Text: Tem ic DG381A/384A/387A/390A Semiconductors CMOS Analog Switches Features Benefits Applications • • • • • Full Rail-to-Rail Analog Signal Range • Minimizes Signal Error • Low Power Dissipation • Low Level Switching Circuits • Programmable Gain Amplifiers


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    PDF DG381A/384A/387A/390A DG180 PLUS-40pen. DG381A S-52880--Rev. 28-Apr-97 DG381AAK

    Untitled

    Abstract: No abstract text available
    Text: SC11027 Parallel Bus Modem Controller 'V ' SIERRA SEMICONDUCTOR □ D irect interface to SC11016 single chip modem □ Complete "AT" command set in firmware □ □ □ □ Auto power down Built-in UART Direct IBM PC XT bus interface 28-pin DIP or PLCC package


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    PDF SC11027 28-pin SC11016 SC11016,

    sab80188

    Abstract: SAB 8086 80188 siemens EM 235 cn
    Text: 47E » • SIEMENS B235b05 GG313b4 T « S I E G SIEMENS AKTIENGESELLSCHAF High-lntegration SAB 80188/80188-1 8-Bit Microprocessor Preliminary SAB 80188 8 MHz • Integrated feature set - enhanced SAB 8088-2 CPU - clock generator - 2 independent high-speed DMAchannels


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    PDF B235b05 GG313b4 16-bit T-49-17-07 fl235bOS SAB80188 fi23SbDS T-49-77-07 sab80188 SAB 8086 80188 siemens EM 235 cn

    Untitled

    Abstract: No abstract text available
    Text: » « H Y U N D A I e r ie s 1M x 4H_bŸjt 5C1M40 S4 0D R3 ABM Sw ,th 4C A S PRELIMINARY DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CSSO controls DQO,


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    PDF 5C1M40 HY514403B 1AC15-00-MAY94 4b750fi6 HY514403BJ HY514403BU

    Untitled

    Abstract: No abstract text available
    Text: KM64B261A BiCMOS SRAM 65,536 WORD x 4 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CM O S): 20mA (max.) • Operating Current : 160mA (f = 100 MHz.)


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    PDF KM64B261A 160mA 28-SOJ-3QO KM64B261A 144-bit 200mV

    JA723

    Abstract: 723C HA723CN "Precision Voltage Regulator" 0405B LA723CN MA723 0581B ha723 precision voltage regulator
    Text: Product specification Philip« Semiconductor« Linear Product* Precision voltage regulator |iA723/723C PIN CONFIGURATION DESCRIPTION The mA723/ iA 723C is a monolithic precision voltage regulator capable of operation in positive or negative supplies as a series,


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    PDF iA723/723C uA723 uA723C JA723 723C HA723CN "Precision Voltage Regulator" 0405B LA723CN MA723 0581B ha723 precision voltage regulator

    KM68BV4002

    Abstract: No abstract text available
    Text: KM68BV4002 CMOS SRAM 512K x 8Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM68BV4002-12:170mA(Max.)


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    PDF KM68BV4002 512Kx KM68BV4002-12 170mA KM68BV4002 KM68BV4002-15 160mA KM68BV4002J 36-SOJ-400

    scr drive circuit diagram

    Abstract: SCR Gate Drive 3 phase scr drive circuit diagram 400 amp SCR used for welding rectifier scr gate driver ic 600 A SCR firing converter circuit SCR gate drive circuit 5600 uF 1600 V scr drive circuit scr driving
    Text: T e m ic SÌ9143 S e m i c o n d u c t o r s Current Sharing Controller for High Performance Processors Features • • • • • • Automatic True Current Sharing with Parallel Converters External SCR Drive for Fault Protection Over-Voltage Protection


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    PDF S-55362â 03-Nov-97 si9143 scr drive circuit diagram SCR Gate Drive 3 phase scr drive circuit diagram 400 amp SCR used for welding rectifier scr gate driver ic 600 A SCR firing converter circuit SCR gate drive circuit 5600 uF 1600 V scr drive circuit scr driving

    RS-464

    Abstract: Teltone M-982 circuit diagram of calling bell 22-PIN M-982 T354 Call Progress Tone generator
    Text: tC e l x c d n e call p r o g r e s s t o n e RECEIVERS & TRANSMITTERS M -982 Precise Call Progress Tone Delector The Teltone M-982 is an integrated circuit precise tone detector for special purpose use in automatic following of switched telephone calls. The circuit uses low-power CMOS


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    PDF M-982 22-pin 0to70Â Vss-22 M-982. 22121-20th RS-464 Teltone M-982 circuit diagram of calling bell T354 Call Progress Tone generator

    ic tba 220

    Abstract: km6161002j KM6161002-17
    Text: SAMSUNG ELEC T R O N I C S INC b7E D • □ □ 1 7 b clö SID SriGK PRELIMINARY KM6161002 CMOS SRAM 65,536 WORD x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL)


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    PDF KM6161002 KM6161002J-15: 230mA KM6161002J-17: 220mA KM6161002J-20: 210mA KM6161002J: 44-Pin Q0177DS ic tba 220 km6161002j KM6161002-17

    TMP68301

    Abstract: 301-AK-2 TLCS-68000 TMP68301AKF-8 TMP68301AKFR-8 TMP68HC000 68HC000 TMP6830 TMP68301A TMP68301AK
    Text: TOSHIBA TMP68301AK Part 3. TMP68301AKF-8 TMP68301AKFR-8 1. Introduction The TMP68301AK uses the 68HC000, the CMOS version of the 68000, as its core processor. The TMP68301AK includes a serial interface, p arallel interface, tim er, and in te rru p t controller. The


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    PDF TMP68301AK TMP68301AKF-8 TMP68301AKFR-8 TMP68301AK 68HC000, TMP68301AK. 68HC000 32-bit TMP68301 301-AK-2 TLCS-68000 TMP68301AKFR-8 TMP68HC000 68HC000 TMP6830 TMP68301A

    Untitled

    Abstract: No abstract text available
    Text: bq4013/bq4013Y BENCHMARQ 128Kx8 Nonvolatile SRAM Features General Description > Data retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The in teg ral control circuitry and lithium energy source provide reli­


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    PDF bq4013/bq4013Y 128Kx8 bq4013 576-bit 32-pin 10-year