32K 4K x 8 SDRAM
Abstract: SA11
Text: Preliminary BMC1020101S-AA 16 Mbits 2M x 8-Bit / 1M x 16-Bit Flash Memory + 64 Mbits (1M x 16 Bits x 4 Banks) Synchronous Dynamic RAM DISTINCTIVE CHARACTERISTICS MCP FEATURES • Organization Flash : 2,097,152 x 8 bits/ 1,048,576 x 16 bits SDRAM : 1,048,576 x 4 banks x 16 bits
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BMC1020101S-AA
16-Bit)
200MHz/CL3
144-Ball
32K 4K x 8 SDRAM
SA11
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PDF
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AIT semicon
Abstract: No abstract text available
Text: GM71C16163C GM71CS16163CL LG Semicon Co.,Ltd. 1,048,576 W O R D S x 16 B IT C M O S D Y N A M IC R A M Description Features T he G M 71C S 16163C /C L is the new generation d ynam ic RAM o rganized 1,048,576 x 16 bit. • 1,048,576 W ords x 16 B it O rganization
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16163C
GM71C16163C
GM71CS16163CL
1111t
AIT semicon
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PDF
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SOJ42-P-400-1
Abstract: MSM5118160F
Text: FEDD5118160F-01 1Semiconductor MSM5118160F This version: June. 2000 Previous version : 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5118160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
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FEDD5118160F-01
MSM5118160F
576-Word
16-Bit
MSM5118160F
42-pin
SOJ42-P-400-1
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PDF
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MSM51V18160F
Abstract: SOJ42-P-400-1
Text: FEDD51V18160F-03 1Semiconductor MSM51V18160F This version: May 2001 Previous version : Jan. 2000 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V18160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate
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FEDD51V18160F-03
MSM51V18160F
576-Word
16-Bit
MSM51V18160F
42-pin
SOJ42-P-400-1
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PDF
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Untitled
Abstract: No abstract text available
Text: PEDD51V18160F-01 1Semiconductor MSM51V18160F This version: May. 2000 Previous version : Preliminary 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V18160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate
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PEDD51V18160F-01
MSM51V18160F
576-Word
16-Bit
MSM51V18160F
42-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: HM51W16160A/AL Series Preliminary 1,048,576-word x 16-bit Dynamic Random Access Memory The Hitachi HM51W16160A/AL is a CMOS dynamic RAM organized 1,048,576 words × 16 bits. It employs the most advanced CMOS technology for high performance and low power.
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HM51W16160A/AL
576-word
16-bit
mW/324
mW/288
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PDF
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CS8160
Abstract: GM71C18160
Text: GM71C18160C GM71CS1816ÛCL LG Semicon Co.,Ltd. 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM71C S 18160C/CL is the new generation dynamic RAM organized 1,048,576 x 16 b it GM71C(S) 18160C/CL has realized
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GM71C18160C
GM71CS1816
GM71C
18160C/CL
CS8160
GM71C18160
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PDF
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GM71V18163CJ-6
Abstract: No abstract text available
Text: GM71V18163CJ-6E 1,048,576 WORDS x 16 BIT EDO DRAM-ET Part Description Features The GM71V18163CJ-6E is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM71V18163CJ-6E has realized higher density, higher performance and various functions by utilizing advanced
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GM71V18163CJ-6E
GM71V18163CJ-6E
42pin
100us.
100us,
GM71V18163CJ-6
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MSM51V18160F
Abstract: SOJ42-P-400-1
Text: FEDD51V18160F-02 1Semiconductor MSM51V18160F This version: January. 2001 Previous version : Oct. 2000 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V18160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate
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Original
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FEDD51V18160F-02
MSM51V18160F
576-Word
16-Bit
MSM51V18160F
42-pin
SOJ42-P-400-1
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PDF
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MSM51V18160F
Abstract: SOJ42-P-400-1
Text: FEDD51V18160F-01 1Semiconductor MSM51V18160F This version: June. 2000 Previous version : 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V18160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate
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Original
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FEDD51V18160F-01
MSM51V18160F
576-Word
16-Bit
MSM51V18160F
42-pin
SOJ42-P-400-1
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PDF
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MSM5118160F
Abstract: SOJ42-P-400-1
Text: FEDD5118160F-01 1Semiconductor MSM5118160F This version: August. 2000 Previous version : 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5118160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
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Original
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FEDD5118160F-01
MSM5118160F
576-Word
16-Bit
MSM5118160F
42-pin
SOJ42-P-400-1
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PDF
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Untitled
Abstract: No abstract text available
Text: NM27LV210 1,048,576-Bit 64K x 16 Low Voltage EPROM SEMICONDUCTOR TM NM27LV210 1,048,576-Bit (64K x 16) Low Voltage EPROM General Description Features The NM27LV210 is a high performance Low Voltage Electrical Programmable read only memory. It is manufactured using
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NM27LV210
576-Bit
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PDF
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MSM51V16160F
Abstract: No abstract text available
Text: FEDD51V16160F-01 1Semiconductor MSM51V16160F This version: May 2001 Previous version : 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate
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Original
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FEDD51V16160F-01
MSM51V16160F
576-Word
16-Bit
MSM51V16160F
42-pin
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PDF
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GM71V18163CJ-6E
Abstract: No abstract text available
Text: GM71V18163CJ-6E 1,048,576 WORDS x 16 BIT EDO DRAM-ET Part Description Features The GM71V18163CJ-6E is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM71V18163CJ-6E has realized higher density, higher performance and various functions by utilizing advanced
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GM71V18163CJ-6E
GM71V18163CJ-6E
42pin
100us.
100us,
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Untitled
Abstract: No abstract text available
Text: ADE-203-466 Z HN624416 Series 1,048,576-word x 16-bit / 2,097,152-word x 8-bit CMOS Programmable Mask ROM Preliminary |_ | i T n I I A The HN624416 is a 16-Mbit CMOS Programmable Mask ROM organized either as 1,048,576 words by 16 bits or 2,097,152 words by
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ADE-203-466
576-word
16-bit
152-word
HN624416
16-Mbit
HN624416P-10
HN624416P-12
HN624416FB-10
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PDF
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27C210
Abstract: 27C220 27C240 NM27C210
Text: NM27C210 1,048,576-Bit 64K x 16 High Performance CMOS EPROM General Description Features The NM27C210 is a high performance Electrically Programmable UV erasable ROM (EPROM). It contains 1,048,576 bits configured as 64K x 16 bit. It is offered in both erasable versions for
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NM27C210
576-Bit
NM27C210
27Tel:
27C210
27C220
27C240
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MSM51V16165F
Abstract: No abstract text available
Text: FEDD51V16165F-02 1Semiconductor MSM51V16165F This version: May 2001 Previous version : Nov. 2000 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V16165F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate
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FEDD51V16165F-02
MSM51V16165F
576-Word
16-Bit
MSM51V16165F
42-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: TC55W1600FT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W1600FT is a 16,777,216-bit static random access memory SRAM organized as 1,048,576 words by 16
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TC55W1600FT-55
576-WORD
16-BIT/2
152-WORD
TC55W1600FT
216-bit
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MSM5118160F
Abstract: SOJ42-P-400-1
Text: FEDD5118160F-02 1Semiconductor MSM5118160F This version: January. 2001 Previous version : August.2000 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5118160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
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Original
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FEDD5118160F-02
MSM5118160F
576-Word
16-Bit
MSM5118160F
42-pin
SOJ42-P-400-1
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM53V1655F_ 524,288-Double Words x 32-bit or 1,048,576-Words x 16-bit MaskROM 4Double Words x 32-Bit or 8Words x 16-Bit/Page Mode MASKROM • DESCRIPTION The OKI MSM53V1655F is a 524,288-double words x 32-bit or 1,048,576-words x 16-bit
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MSM53V1655F_
288-Double
32-bit
576-Words
16-bit
16-Bit/Page
MSM53V1655F
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PDF
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Untitled
Abstract: No abstract text available
Text: GM71V16163C GM71VS16163CL 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM71V S 16163C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM71V(S)16163C/CL has realized higher density, higher performance and various functions by utilizing
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GM71V16163C
GM71VS16163CL
GM71V
16163C/CL
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SOJ42-P-400-1
Abstract: MSM5116160F
Text: FEDD5116160F-02 1Semiconductor MSM5116160F This version: August. 2002 Previous version : Sep.2001 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
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Original
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FEDD5116160F-02
MSM5116160F
576-Word
16-Bit
MSM5116160F
42-pin
SOJ42-P-400-1
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PDF
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GM71V16163C
Abstract: No abstract text available
Text: GM71V16163C GM71VS16163CL 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM71V S 16163C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM71V(S)16163C/CL has realized higher density, higher performance and various functions by utilizing
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Original
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GM71V16163C
GM71VS16163CL
GM71V
16163C/CL
GM71V16163C
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PDF
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GM71C
Abstract: GM71C16163C
Text: GM71C16163C GM71CS16163CL 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM71C S 16163C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM71C(S)16163C/CL has realized higher density, higher performance and various functions by utilizing
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Original
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GM71C16163C
GM71CS16163CL
GM71C
16163C/CL
GM71C16163C
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PDF
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