1/POWER MOSFET 9R120C Search Results

1/POWER MOSFET 9R120C Result Highlights (5)

Part	Manufacturer	Description
MGN1S1208MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-8V GAN
MGN1D120603MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-6/-3V GAN
MGN1S1212MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-12V GAN
MGN1S0508MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-8V GAN
MGN1S0512MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-12V GAN

1/POWER MOSFET 9R120C Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
9R120C Abstract: IPW90R120C3 9r120 CoolMOS Power Transistor IPW90R120C3 INFINEON 900 V 36 A IPW90R120C3 INFINEON JESD22 Text: IPW90R120C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J=25°C 0.12 Ω Q g,typ 260 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPW90R120C3 PG-TO247 9R120C 9R120C IPW90R120C3 9r120 CoolMOS Power Transistor IPW90R120C3 INFINEON 900 V 36 A IPW90R120C3 INFINEON JESD22	PDF
9R120C Abstract: IPW90R120C3 9r120 Diode d29 08 JESD22 marking d88 Text: IPW90R120C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J=25°C 0.12 Ω Q g,typ 270 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPW90R120C3 PG-TO247 9R120C 9R120C IPW90R120C3 9r120 Diode d29 08 JESD22 marking d88	PDF
9R120C Abstract: 1/power MOSFET 9R120C IPW90R120C3 JESD22 9R120 Text: IPW90R120C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J=25°C 0.12 Ω Q g,typ 270 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPW90R120C3 PG-TO247 9R120C 009-134-A O-247 PG-TO247-3 9R120C 1/power MOSFET 9R120C IPW90R120C3 JESD22 9R120	PDF
9R120C Abstract: No abstract text available Text: IPW90R120C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J=25°C 0.12 Ω Q g,typ 270 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPW90R120C3 PG-TO247 9R120C 009-134-A O-247 PG-TO247-3 9R120C	PDF