ELECTRONIC BALLAST T5 54w
Abstract: FVN4240TG FVN4232TG Luminaire Photometric data Electronic ballast 40W electronic ballast for t8 362 40w fluorescent lamp FVN4232 datasheet CI 556 40w electronic ballast
Text: 6L CI. I, Div. 2, Groups A, B, C, D CI. I, Zone 2, Group IIC CI. II, Div. 1, Groups F, G CI. III & Simultaneous Presence FVN Series Fluorescent Luminaires Wet Locations NEMA 3, 3R Applications: FVN Luminaires are ideal for use: • In areas made hazardous by the abnormal conditions resulting in
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330063
Abstract: 330024 179031-1 1116503 41494-7 331693 406062 64071
Text: C a t a lo g 1 3 0 7 5 1 5 Issued 9-99 N u m e ric a l Index Note: This index lists all cataloged parts by base no. only. Complete part nos. with prefixes and/or suffixes are shown on the page(s)indicated. Pa^ 11 11 11 11 11 19 21 31 31 31 31 31 32 32 32
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59012 h 331
Abstract: No abstract text available
Text: r to 61 41 65 45 = = = = 1% 1% 5% 5% Tol. Tol. Tol. Tol. on a miniReel in a miniBag on a miniReel in a miniBag Size Code 2 3 5 6 = = = = 0402 0603 0805 1206 Dimensions L x W : 7 = 1210 8 = 2010 9 = 2512 C ase Resistor value Code in £1 — { Use code from product chart)
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22M12
10M12
22M12
59012 h 331
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LCT-2320
Abstract: LT 420 lt 747 LT 816 LT-2320 LT 238 LCT-840 LCT-1680 lt 336 LT 537
Text: N RE TU R E CL CY RE 12-329 LEAD LCT LEAD-CALCIUM LT LEAD-ANTIMONY H FOR TELECOMMUNICATIONS APPLICATIONS W CAPACITIES FROM 840 TO 2320 AMPERE-HOURS RELIABILITY • Proprietary vacuum-assisted, bottom-pour, positive-grid casting assures void-free grid quality resulting in long service life
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LCT-1680
5M/205/WLG/8
LCT-2320
LT 420
lt 747
LT 816
LT-2320
LT 238
LCT-840
LCT-1680
lt 336
LT 537
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Luminaire Photometric data
Abstract: N2MV-WM1 G303-S808 T2D 44 diode N2MVF2A064GP RD739 N2MVF2C064GP incandescent luminaire pendant N2MVF2C052GP G303
Text: 6L N2MVF Series Compact Fluorescent Marine & Wet Locations 3, 3R, 4, 4X; IP56 Cl. I, Div. 2, Groups A, B, C, D Cl. II, Groups F, G Cl. III & Simultaneous Presence Champ Non-metallic Luminaires Applications: N2MVF Series Champ Luminaires are used: • In areas in which ignitable
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Untitled
Abstract: No abstract text available
Text: ±1% Tolerance 0402 to 1206 Chip Resistors Specifications - X 1 % Resistance Values OHM 0O 1 0 .0 0 f 10.2 a 1 0 .5 0 1 0 .7 0 1 1 .0 0 1 1 1 .3 0 1 1 .5 0 1 1 .8 0 7 2 .0 0 12.1Q. 1 2 .4 0 1 2 .7 0 1 3 .0 0 1 1 3 .3 0 1 3 .7 0 1 4 .0 0 1 4 .3 0 1 4 .7 0 1 5 .0 0 f
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332KQ
182X12
221X12
243X12
249X12
255X12
261K12
267KQ
274KS2
300KC2
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275-241
Abstract: VXHA45GPRA Lamp 100w VDA25GP VXHF25GP VXHBF23GP VXHF22GP VXHA45GP VXH15GP VXH15
Text: Cl. I, Div. 2, Groups A, B, C, D All mounting except stanchion Wet Locations NEMA 3, 3R VAPORGARD Incandescent Luminaires Applications: Vaporgard series incandescent luminaires are used: • Indoors or outdoors in industrial locations where enclosed and gasketed
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PS-25
PS-30
275-241
VXHA45GPRA
Lamp 100w
VDA25GP
VXHF25GP
VXHBF23GP
VXHF22GP
VXHA45GP
VXH15GP
VXH15
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Untitled
Abstract: No abstract text available
Text: ±1% Tolerance 0402 to 1206 Chip Resistors O rd er N u m b er S ystem 61 - Specifications - 3 - XXX Type 61 = miniReel 41 = miniBag Size Code 2 = 0402 3 = 0603 5 = 0805 6= 1206 |w | • I Code <fl See Chart Dimensions L x W): Size Inch mm l x W L x W 0402 .04" x .02” 1.0 x 0.5
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928 606 402 00
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5008
2SC5008
928 606 402 00
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chip t4 3570
Abstract: No abstract text available
Text: 1% Chip Resistor m iniver 0402 to 1206 Size E24 Values 10.0X01 510 H .o x o t 511 12.0X0 855 13.0X01513 15.0X01515 16.0X0 856 18.0X0 857 20.0X0 1 520 22.0X0 858 24.0X0 859 27.0X0 860 30.0X0 861 33.0X0 862 36.0X0 863 39.0X0 864 43.0X0 865 47.0X0 866 51.0X0 867
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0X01513
0X01515
100X01
120X0
130X01
150X01
160X0
180X0
200X01
220X0
chip t4 3570
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DIODE 709 1334
Abstract: T719N D428N D798N T1189N T1509N T1989N T298N T358N T588N
Text: ~ B6H - Schaltung Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 400 Veff 500 Veff 540 V 1400 V 670 V 1600 V Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] [W] 35 175 260 385 439 585 623 759
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ZO 103 MA 75 623
Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
Text: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
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2SC5008
2SC5008
ZO 103 MA 75 623
ZO 103 MA 75 542
1 928 405 767
NEC C 3568
TD-2433
2SC5008-T1
4557 nec
518 1149 0 44 111
1 928 405 452
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Wurth 744 224
Abstract: Wurth 744 841 247 wurth 744 203 744 252 510 wurth wurth 744 760 312 str 1195 wurth 744 137 LF 842 626 smd 1 928 498 839 WuRTH 744 311
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : LF 7488920245 RoHS compliant SMD Antenne WE-MCA Chip-Antenna WE-MCA DATUM / DATE : 2004-10-11 A Mechanische Abmessungen / dimensions:
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D-74638
Wurth 744 224
Wurth 744 841 247
wurth 744 203
744 252 510 wurth
wurth 744 760 312
str 1195
wurth 744 137 LF
842 626 smd
1 928 498 839
WuRTH 744 311
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6A 1176
Abstract: unigy 11 battery unigy WP-93379 unigy 93379 comcode 105 736 490 3A-85-23 3A-85-33 3A-75-27 Lucent VRLA batteries
Text: Unigy II Series Batteries 160 Ah to 4200 Ah The five standard modules are 75 Ah plate 12 V, 75 Ah plate 6 V, 85 Ah plate 12 V, 85 Ah plate 6 V, and 85 Ah plate 2 V. Modules are connected in series to create strings at the standard operating voltages, such as 24 V or 48 V.
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20-Year
DS98-391LIN
DS95-187LIN)
6A 1176
unigy 11 battery
unigy
WP-93379
unigy 93379
comcode 105 736 490
3A-85-23
3A-85-33
3A-75-27
Lucent VRLA batteries
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IC SEM 2105
Abstract: 3771 nec
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
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2SC5008
2SC5008
IC SEM 2105
3771 nec
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391K0
Abstract: KO331 F KO 317 MS14049 ms75103 MS14043
Text: Mil Standard to Delevan Conversion Chart / MS -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 128 129 130 131 132 133 134 135 136 137 -30 -32 -34 -36 -38 -40 -42 -44 -47 -51 MS o CO LT10K 1537 00 MS 14046 17 18 19 20 21 22 23 24 25 26 MS LT4K MS18100 -10 thru -20 See MS14040
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LT10K
MS18100
MS14040
MS14041
MSI8100-28
MS14042
391K0
KO331
F KO 317
MS14049
ms75103
MS14043
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DMVF2A052GP
Abstract: DMVF2C052GP DMVFJ084GP DMVF2A084GP DMVF2TW084GP battery fluorescent ballast DMVFJ052GP DMVF3A064GP DMVFJ064GP DMVF2C084GP
Text: DMVF Series Compact Fluorescent Cl. I, Div. 2, Groups A, B, C, D Restricted Breathing Cl. I, Div. 2 & Zone 2 Suffix S826 Certified for IEC Zone 2 (Suffix S826TB) Champ Luminaires Applications: DMVF Series Champ Luminaires are used: • In areas made hazardous by abnormal
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S826TB)
DMVF2A052GP
DMVF2C052GP
DMVFJ084GP
DMVF2A084GP
DMVF2TW084GP
battery fluorescent ballast
DMVFJ052GP
DMVF3A064GP
DMVFJ064GP
DMVF2C084GP
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Untitled
Abstract: No abstract text available
Text: electronics, inc. POLYESTER FILM CAPACITORS Metalized Polyester Film Capacitors Typical Characteristics ……………B-3 Type 218P …………………………………………………………………B-4 Type 430P …………………………………………………………………B-7
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1032 1kv polyester capacitor
Abstract: 431P 9939a 430P 104 6K0 Dearborn 910 DEARBORN ELECTRONICS, INC 218P 409P 430P 442P
Text: electronics, inc. POLYESTER FILM CAPACITORS Metalized Polyester Film Capacitors, Typical Characteristics . . . . . . . . . B-3 Type 218P. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . B-4 Type 430P. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . B-7
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BS4235
Abstract: belt htd
Text: Issued March 1997 232-4639 Data Pack B Synchronous drives Data Sheet The RS range of synchronous belt drives fulfils the requirement for a positive drive capable of maintaining an exact speed ratio without a small amount of ‘V’belt creep. These timing belt drives operate at speeds well
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ge 130l10
Abstract: GE capacitors 150l20 GE 47Z7 15a h3 fuse sf thermistor 420l40 GE 150L10 GE 100z15 GE 130L20B DIN 13715 2011 576-V100ZA15P
Text: CIRCUIT PROTECTION Varistors AVX. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 546, 547 Epcos. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .548, 549
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30Screw
ge 130l10
GE capacitors 150l20
GE 47Z7
15a h3 fuse sf
thermistor 420l40
GE 150L10
GE 100z15
GE 130L20B
DIN 13715 2011
576-V100ZA15P
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implementation of data convolution algorithms
Abstract: digital filter calculus geology z transform DSP hearing aid image compression using neural networks linear convolution Civil Engineering data sheet design of Electrical Power Distribution transform display king
Text: The Scientist and Engineer's Guide to Digital Signal Processing Second Edition Be sure to visit the book’s website at: www.DSPguide.com The Scientist and Engineer's Guide to Digital Signal Processing Second Edition by Steven W. Smith California Technical Publishing
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Untitled
Abstract: No abstract text available
Text: Issued March 1997 232-3557 Data Pack G Data Sheet Power transmission drive belts Wedge and V-belt drives Wedge belts – SPZ and SPA types Size selector guide: SPZ and RMA equivalent RS stock no. The RS range of power transmission wedge and V-belts are manufactured to the ‘Fit and Forget’ oneshot tensioning principle. The precision control during
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nec 2401 831
Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and
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2SC5010
2SC5010
nec 2401 831
nec 2401
2SC5010-T1
437 20000
marking 83
7749 transistor
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