1N6316 JANTX
Abstract: 1N6309 1N6310 1N6311 1N6312 1N6313 1N6314 1N6315 1N6316 1N6317
Text: 1N6309 THRU 1N6320 • AVAILABLE IN JAN, JANTX, JANTXV, AND JANS PER MIL-PRF-19500/533 • 500 mW ZENER DIODES • NON CAVITY CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS 0.056/0.075 1.42/1.91 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C
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1N6309
1N6320
MIL-PRF-19500/533
1N6316 JANTX
1N6309
1N6310
1N6311
1N6312
1N6313
1N6314
1N6315
1N6316
1N6317
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1n6319
Abstract: 1N6319 JANTX 1N6309 1N6310 1N6311 1N6312 1N6313 1N6314 1N6315 1N6316
Text: • AVAILABLE IN JAN, JANTX, PER MIL-PRF-19500/533 1N6309 THRU 1N6320 JANTXV, AND JANS • 500 mW ZENER DIODES • NON CAVITY CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS 0.056/0.075 1.42/1.91 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C
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MIL-PRF-19500/533
1N6309
1N6320
1N630mum
1n6319
1N6319 JANTX
1N6309
1N6310
1N6311
1N6312
1N6313
1N6314
1N6315
1N6316
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NTE5141A
Abstract: No abstract text available
Text: NTE5111A thru NTE5166A Zener Diode, 5 Watt ±5% Tolerance Features: D Zener Voltage: 3.3V to 200V D High Surge Current Capability Absolute Maximum Ratings: DC Power Dissipation TL = +75°C, Lead Length = 3/8” , PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
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NTE5111A
NTE5166A
NTE5141A
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1N6317US JANTX
Abstract: mil-prf-19500/533 1N6317US 1N6319US JANTXV 1N6309US 1N6310US 1N6311US 1N6312US 1N6313US 1N6314US
Text: 1N6309US THRU 1N6320US • AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/533 • 500 mW ZENER DIODES • NON CAVITY CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C
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1N6309US
1N6320US
MIL-PRF-19500/533
1N6310US
1N6311US
1N6312US
1N6317US JANTX
mil-prf-19500/533
1N6317US
1N6319US JANTXV
1N6309US
1N6310US
1N6311US
1N6312US
1N6313US
1N6314US
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Untitled
Abstract: No abstract text available
Text: NTE5111A thru NTE5166A Zener Diode, 5 Watt ±5% Tolerance Features: D Zener Voltage: 3.3V to 200V D High Surge Current Capability Absolute Maximum Ratings: DC Power Dissipation TL = +75°C, Lead Length = 3/8” , PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
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NTE5111A
NTE5166A
40mW/Â
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NTE5127A
Abstract: NTE5124A NTE5117A NTE5161A NTE5128A NTE5130A NTE5133A NTE5133 NTE5125A NTE5152A
Text: NTE5111A thru NTE5166A Zener Diode, 5 Watt ±5% Tolerance Features: D Zener Voltage: 3.3V to 200V D High Surge Current Capability Absolute Maximum Ratings: DC Power Dissipation TL = +75°C, Lead Length = 3/8” , PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
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NTE5111A
NTE5166A
NTE5127A
NTE5124A
NTE5117A
NTE5161A
NTE5128A
NTE5130A
NTE5133A
NTE5133
NTE5125A
NTE5152A
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1N6317US
Abstract: 1N6309US 1N6310US 1N6311US 1N6312US 1N6313US 1N6314US 1N6315US 1N6316US 1N6320US
Text: • AVAILABLE IN JAN, JANTX, JANTXV AND PER MIL-PRF-19500/533 1N6309US THRU 1N6320US JANS • 500 mW ZENER DIODES • NON CAVITY CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C
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MIL-PRF-19500/533
1N6309US
1N6320US
1N6317US
1N6309US
1N6310US
1N6311US
1N6312US
1N6313US
1N6314US
1N6315US
1N6316US
1N6320US
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Untitled
Abstract: No abstract text available
Text: 1N3305B THRU 1N3350B w w w. c e n t r a l s e m i . c o m SILICON ZENER DIODE 6.8 VOLT THRU 200 VOLT 50W, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N3305B series types are silicon Zener diodes manufactured in a hermetically sealed metal case, designed for high
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1N3305B
1N3350B
1N3305RB)
1N3306B
1N3307B
1N3308B
1N3309B
1N3310B
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1N4475
Abstract: 1N4465 1N4460 1N4469 1N4474 1N4477 1N4471 1N4479 1N4466
Text: 1N4460 THRU 1N4496 w w w. c e n t r a l s e m i . c o m SILICON ZENER DIODES 1.5 WATT, 6.2 THRU 200 VOLT 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N4460 series silicon Zener diode is a high quality voltage regulator designed for use in automotive, industrial, commercial,
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1N4460
1N4496
DO-41
1N4491
1N4492
1N4493
1N4494
1N4495
1N4475
1N4465
1N4469
1N4474
1N4477
1N4471
1N4479
1N4466
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Untitled
Abstract: No abstract text available
Text: 1N3305B THRU 1N3350B w w w. c e n t r a l s e m i . c o m SILICON ZENER DIODES 6.8 VOLT THRU 200 VOLT 50W, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N3305B series types are silicon Zener diodes manufactured in a hermetically sealed metal case, designed for high
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1N3305B
1N3350B
1N3305RB)
21-March
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HZ2A1
Abstract: HZ15-1 HZ6C HZ-12B1 HZ4B3 HZ11A3 HZ27-3 hz9a2 HZ20-3 HZ4C
Text: HZ2A1 . HZ36-3 500 mW HZ2A1 . HZ36-3 (500 mW) Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden Version 2012-11-19 Maximum power dissipation Maximale Verlustleistung 3.9 62.5 Nominal Z-voltage Nominale Z-Spannung 1.6.38 V Glass case Glasgehäuse
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HZ36-3
DO-35
OD-27)
HZ16-1
HZ16-2
HZ16-3
HZ18-1
HZ18-2
HZ18-3
HZ2A1
HZ15-1
HZ6C
HZ-12B1
HZ4B3
HZ11A3
HZ27-3
hz9a2
HZ20-3
HZ4C
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1N2827B
Abstract: No abstract text available
Text: 1N2804B THRU 1N2846B w w w. c e n t r a l s e m i . c o m SILICON ZENER DIODES 50W, 6.8 THRU 200 VOLT 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N2804B series types are silicon Zener diodes manufactured in a hermetically sealed metal case, designed for high
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1N2804B
1N2846B
1N2804RB)
1N2842B
1N2843B
1N2844B
1N2845B
21-March
1N2827B
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1n53338
Abstract: 1N53348
Text: MOTOROLA SC DIOBES/OPTO 3TE D El b3L7ESS 00fl3flEM T E3MOT7 MOTOROLA T SEM IC O N D U C T O R L" — - iH TECHNICAL DATA 1N53338 thru 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes . . . a complete series of 5 Watt Zener Diodes with tight limits and better operating charac
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00fl3flEM
1N53338
1N5388B
1n53338
1N53348
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1N5347B Case 17-02
Abstract: ZENER DIODE 18 volt 3 watt 5.1 volt 5 watt zener diode ZENER DIODE 18 volt 5 watt zener motorola 1N5333B ZENER DIODE 5 watt 140 VOLT 1N5335B 1N5336B 1N5338B
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5333B through 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes This is a complete series of 5 Watt Zener Diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide-passivated junctions.
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1N5333B
1N5388B
1N5347B Case 17-02
ZENER DIODE 18 volt 3 watt
5.1 volt 5 watt zener diode
ZENER DIODE 18 volt 5 watt
zener motorola
1N5333B
ZENER DIODE 5 watt 140 VOLT
1N5335B
1N5336B
1N5338B
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LTVSQ5V5ESGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD LTVSQ5V5ESGP LOW CAPACITANCE SURFACE MOUNT TVS DIODES APPLICATION *PC/Notebook USB2.0/IEEE1394 ports. * Cellular phone and PCS mobile handsets. *DVI interfaces. * Cordless telephones SC-74/SOT-457/SOT-23-6L *Wireless data WAN/LAN ayatems.
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0/IEEE1394
SC-74/SOT-457/SOT-23-6L
SC-74/SOT-457
100kohm
LTVSQ5V5ESGP
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1n53338
Abstract: 1N53888 2SC 930 AF 1NS339B 1N6360B Zener diode wz 210 1N5333B 1N5334B 1N5335B 1N5336B
Text: 1N53338 thru 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes . a complete series of 5 Watt Zener Diodes with tight limits and better operating charac teristics that reflect the superior capabilities of silicon-oxide-passivated junctions. All this in an axlal-lead, transfer-molded plastic package offering protection In all common environ
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5333B through 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes This is a complete series of 5 Watt Zener Diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide-passivated junctions.
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1N5333B
1N5388B
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92 um zener diodes
Abstract: MOTOROLA 1N5339B ZENER DIODE 18 volt 1N5370B motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5333B through 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes This is a complete series of 5 Watt Zener Diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide-passivated junctions.
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1N53888
Abstract: Zener diode wz 130 1n53338 LR Amps Zener diode wz 210 Zener diode WZ 340 1N5358B motorola Zener diode wz 230 Zener diode wz 280 1N5333B
Text: MOTOROLA SC D I O D E S / O P T O 3TE D El b3L72S S 00Ö3ÖEM E3MOT7 MOTOROLA SEMICONDUCTOR c TECHNICAL DATA 1N53338 thru 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes . . . a complete series of 5 Watt Zener Diodes with tight limits and better operating charac
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b3L72SS
E3I10T7
1N53888
Zener diode wz 130
1n53338
LR Amps
Zener diode wz 210
Zener diode WZ 340
1N5358B motorola
Zener diode wz 230
Zener diode wz 280
1N5333B
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zener diode marking R11
Abstract: CMZ5340B
Text: CMZ5334B THRU CMZ5388B SURFACE MOUNT SILICON HIGH POWER ZENER DIODES 5.0 WATT, 3.6 THRU 200 VOLT ±5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMZ5334B series silicon Zener diode is a high quality voltage regulator, manufactured in an epoxy molded surface
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CMZ5334B
CMZ5388B
CMZ5334B
C5386B
CMZ5387B
C5387B
C5359B
C5388B
zener diode marking R11
CMZ5340B
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1N5347B Case 17-02
Abstract: Zener Voltage Regulator Diodes motorola ZENER DIODE 5 watt 140 VOLT
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5333B through 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes This is a complete series of 5 Watt Zener Diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide-passivated junctions.
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1N5341CRL
1N5347B Case 17-02
Zener Voltage Regulator Diodes motorola
ZENER DIODE 5 watt 140 VOLT
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Untitled
Abstract: No abstract text available
Text: CMZ5334B THRU CMZ5388B SURFACE MOUNT SILICON HIGH POWER ZENER DIODES 5.0 WATT, 3.6 THRU 200 VOLT ±5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMZ5334B series silicon Zener diode is a high quality voltage regulator, manufactured in an epoxy molded surface
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CMZ5334B
CMZ5388B
CMZ5334B
C5386B
CMZ5387B
C5387B
C5359B
C5388B
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CMZ5334B
Abstract: c5387
Text: CMZ5334B THRU CMZ5388B SURFACE MOUNT SILICON HIGH POWER ZENER DIODES 5.0 WATT, 3.6 THRU 200 VOLT ±5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMZ5334B series silicon Zener diode is a high quality voltage regulator, manufactured in an epoxy molded surface
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CMZ5334B
CMZ5388B
VC5378B
C5379B
C5380B
C5381B
C5382B
C5383B
C5384B
c5387
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SMD Diode S140
Abstract: transistor a 949 100 Amp current 1300 volt diode DIODE SMD S140 JMV1206S450T551 250 B 340 smd Transistor JMV0603S300T101 JMV0805S180T351 JMV0402S5R6T301 JMV1812
Text: MULTILAYER CHIP VARISTOR RoHS JMV S & E Series: SMD Surge Protection ü INTRODUCTION FEATURES Metal Oxide based chip varistors (JMVs) are used for transient voltage suppression. JMVs have non-linear voltage-current behavior, which is similar to that of Zener Diode. Each grain in
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1812S380
1812S260
1812S220
00E-08
00E-07
00E-06
00E-05
00E-04
00E-03
00E-02
SMD Diode S140
transistor a 949
100 Amp current 1300 volt diode
DIODE SMD S140
JMV1206S450T551
250 B 340 smd Transistor
JMV0603S300T101
JMV0805S180T351
JMV0402S5R6T301
JMV1812
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